Semiconductor devices including interposer substrates further including capacitors

1. A semiconductor device, comprising:

an interposer substrate; and

at least one die mounted on the interposer substrate,

wherein the interposer substrate includes

a semiconductor substrate having a first surface and a second surface opposite to the first surface,

an interlayer insulating layer on the first surface of the semiconductor substrate,

a capacitor in a hole penetrating the interlayer insulating layer,

an interconnection layer on the interlayer insulating layer, and

a through-via extending from the interconnection layer toward the second surface of the semiconductor substrate in a vertical direction that is perpendicular to the first surface of the semiconductor substrate,

wherein the hold penetrating the interlayer insulating layer extends in the vertical direction and includes sidewalls at least partially defined by an inner sidewall surface and a bottom surface,

wherein the capacitor includes a sequential stack, of a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode, that is at least partially in the hole penetrating the interlayer insulating layer and extending along the inner sidewall surface and the bottom surface of the hole penetrating the interlayer insulating layer, and

wherein the capacitor is spaced apart from the semiconductor substrate, such that a bottom of the hole is distal from the second surface of the semiconductor substrate in relation to the first surface of the semiconductor substrate and the first surface of the semiconductor substrate is between the bottom of the hole and the second surface of the semiconductor substrate.

2. The semiconductor device of claim 1 , wherein

the interconnection layer includes, in a first metal layer, a first power interconnection line, a second power interconnection line and a third power interconnection line,

the first power interconnection line is electrically connected to the first electrode,

the second power interconnection line is electrically connected to the second electrode, and

the third power interconnection line is electrically connected to the third electrode.

3. The semiconductor device of claim 2 , wherein

the semiconductor substrate includes a capacitor region, a first connection region, and a second connection region,

the capacitor is in the interlayer insulating layer on the capacitor region, and

the interposer substrate further includes

a first via connecting the first power interconnection line to the first electrode on the first connection region, and

a second via connecting the second power interconnection line to the second electrode on the second connection region.

4. The semiconductor device of claim 3 , wherein

the first electrode extends onto a top surface of the interlayer insulating layer on the first connection region and is in contact with the first via, and

the second electrode extends onto the top surface of the interlayer insulating layer on the second connection region and is in contact with the second via.

5. The semiconductor device of claim 4 , wherein

the first electrode has an opening on the second connection region, and

the second electrode on the second connection region vertically overlaps with the opening.

6. The semiconductor device of claim 3 , wherein

the capacitor further includes a top electrode on the third electrode,

the top electrode completely fills the hole, and

the interposer substrate further includes a third via connecting the third power interconnection line to the top electrode on the capacitor region.

7. The semiconductor device of claim 1 , wherein

the interposer substrate further includes an etch stop layer between the first surface and the interlayer insulating layer, and

the bottom of the hole is between a top surface of the etch stop layer and a bottom surface of the etch stop layer in the vertical direction.

8. The semiconductor device of claim 1 , wherein

the interposer substrate further includes a circuit layer between the first surface and the interlayer insulating layer in the vertical direction,

the circuit layer includes a plurality of transistors on the first surface, and

the capacitor vertically overlaps with the circuit layer.

9. The semiconductor device of claim 1 , wherein the at least one die includes a logic die and a memory stack structure which are both on the interposer substrate and which are adjacent to each other in a horizontal direction that is perpendicular to the vertical direction.

10. The semiconductor device of claim 1 , further comprising:

a package substrate beneath the interposer substrate such that the interposer substrate is between the package substrate and the at least one die in the vertical direction;

an upper pad between the interposer substrate and the at least one die in the vertical direction; and

a lower pad between the interposer substrate and the package substrate in the vertical direction,

wherein the upper pad is on the interconnection layer, and

wherein the through-via vertically extends from the interconnection layer to the lower pad.

11. A semiconductor device, comprising:

an interposer substrate; and

at least one die mounted on the interposer substrate,

wherein the interposer substrate includes

a semiconductor substrate having a first surface and a second surface opposite to the first surface, the semiconductor substrate including a capacitor region, a first connection region, a second connection region, and a through-via region,

an interlayer insulating layer on the first surface of the semiconductor substrate,

a capacitor in the interlayer insulating layer on the capacitor region,

an interconnection layer on the interlayer insulating layer, and

a through-via at least partially in the through-via region and extending from the interconnection layer toward the second surface of the semiconductor substrate in a vertical direction that is perpendicular to the first surface of the semiconductor substrate,

wherein the capacitor includes a sequential stack of a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode,

wherein the first connection region and the second connection region are both located between the capacitor region and the through-via region in a horizontal direction that is parallel to the first surface of the semiconductor substrate, and the second connection region is located between the capacitor region and the first connection region in the horizontal direction,

wherein the first electrode extends from the capacitor region onto the first connection region, and the first electrode has an opening on the second connection region,

wherein the second electrode extends from the capacitor region onto the second connection region, and the second electrode on the second connection region vertically overlaps with the opening.

12. The semiconductor device of claim 11 , wherein a lowest level of the first electrode is higher than the first surface.

13. The semiconductor device of claim 12 , wherein

the interposer substrate further includes an etch stop layer between the first surface and the interlayer insulating layer, and

the lowest level of the first electrode is between a top surface and a bottom surface of the etch stop layer.

14. The semiconductor device of claim 11 , wherein

the first electrode on the first connection region is on a top surface of the interlayer insulating layer, and

the second electrode on the second connection region is on the top surface of the interlayer insulating layer.

15. The semiconductor device of claim 11 , wherein

the interconnection layer includes, in a first metal layer, a first power interconnection line, a second power interconnection line and a third power interconnection line, and

wherein the interposer substrate further includes

a first via connecting the first power interconnection line to the first electrode on the first connection region,

a second via connecting the second power interconnection line to the second electrode on the second connection region, and

a third via electrically connecting the third power interconnection line to the third electrode on the capacitor region.

16. A semiconductor device, comprising:

a package substrate;

an interposer substrate on the package substrate;

at least one die mounted on the interposer substrate;

a lower pad between the interposer substrate and the package substrate;

an external terminal between the lower pad and the package substrate;

an upper pad between the interposer substrate and the at least one die; and

a connection terminal between the upper pad and the at least one die,

wherein the interposer substrate includes

a semiconductor substrate having a first surface and a second surface opposite to the first surface, the lower pad on the second surface,

an etch stop layer on the first surface of the semiconductor substrate,

an interlayer insulating layer on the etch stop layer,

a capacitor in a hole penetrating the interlayer insulating layer, wherein a bottom of the hole is distal to the second surface in relation to the first surface based at least in part on the etch stop layer,

an interconnection layer on the interlayer insulating layer, and

a through-via extending from the interconnection layer to the lower pad,

wherein the interconnection layer includes a sequential stack of a plurality of metal layers,

wherein each metal layer of the plurality of metal layers includes at least one interconnection line and a via vertically overlapping with the at least one interconnection line,

wherein the upper pad is on an uppermost metal layer of the plurality of metal layers, and

wherein the capacitor includes a sequential stack, in the hole, of a first electrode, a first dielectric layer, a second electrode, a second dielectric layer and a third electrode.

17. The semiconductor device of claim 16 , wherein

a lowermost metal layer of the plurality of metal layers includes a first power interconnection line, a second power interconnection line, and a third power interconnection line,

the first power interconnection line is electrically connected to the first electrode,

the second power interconnection line is electrically connected to the second electrode, and

the third power interconnection line is electrically connected to the third electrode.

18. The semiconductor device of claim 17 , wherein

the semiconductor substrate includes a capacitor region, a first connection region, and a second connection region,

the capacitor is in the interlayer insulating layer on the capacitor region,

the first electrode extends onto a top surface of the interlayer insulating layer on the first connection region so as to be electrically connected to the first power interconnection line, and

the second electrode extends onto the top surface of the interlayer insulating layer on the second connection region so as to be electrically connected to the second power interconnection line.

19. The semiconductor device of claim 18 , wherein

the first electrode has an opening on the second connection region, and

the second electrode on the second connection region vertically overlaps with the opening.

20. The semiconductor device of claim 18 , wherein

the capacitor includes a top electrode on the third electrode,

the top electrode completely fills the hole, and

the top electrode is electrically connected to the third power interconnection line on the capacitor region.