Unified micro system with memory IC and logic IC

1. An unified IC system, comprising:

a package;

a base memory chip enclosed in the package, the base memory chip comprising a memory region and a bridge area, the memory region comprising a plurality of memory cells and each memory cell comprising a first transistor, and the bridge area comprising a plurality of memory input/output (I/O) pads and a plurality of third transistors; and

a logic chip physically separated from the base memory chip and enclosed in the package, the logic chip comprising a logic bridge area and a plurality of second transistors, the logic bridge comprising a plurality of logic I/O pads;

wherein the plurality of memory I/O pads are electrically coupled to the plurality of logic I/O pads, and a voltage level of a signal to or from the third transistor is the same or substantially the same as a voltage level of a signal to or from the second transistor;

wherein a 3D structure of the third transistor is the same or substantially the same as a 3D structure of the second transistor, and a first conductor region of the 3D structure of the third transistor extends upward above a silicon surface.

2. The unified IC system of claim 1 , wherein both the base memory chip and the logic chip are configured above a substrate, and the base memory chip is horizontally apart from the logic chip.

3. The unified IC system of claim 1 , wherein the base memory chip is positioned above the logic chip.

4. The unified IC system of claim 1 , wherein two insulation layers are formed under the first conductor region and a second conductor region of the third transistor, respectively.

5. The unified IC system of claim 1 , wherein each memory cell further comprises a capacitor connected to the first transistor.

6. The unified IC system of claim 1 , wherein the first conductive region comprises a lower part and an upper part, and the lower part is below the silicon surface and within one concave, and an insulation layer is formed under the lower part of the first conductive region.

7. The unified IC system of claim 1 , wherein a voltage level of a signal to or from the first transistor is the same or substantially the same as the voltage level of the signal to or from the second transistor.

8. The unified IC system of claim 7 , wherein a 3D structure of the first transistor is the same or substantially the same as a 3D structure of the second transistor.

9. An unified IC system, comprising:

a DRAM chip comprising:

a plurality of DRAM cells, wherein each DRAM cell comprises a first transistor and a capacitor; and

a DRAM bridge area comprising a plurality of DRAM input/output (I/O) pads and a plurality of third transistors; and

a logic chip physically separated from the DRAM chip, comprising:

a plurality of second transistors; and

a logic bridge area, wherein the logic bridge area comprises a plurality of logic I/O pads, and the plurality of DRAM I/O pads are electrically coupled to the plurality of logic I/O pads;

wherein the DRAM chip does not include a voltage translation circuit or an off-chip driver positioned before the plurality of DRAM input/output (I/O) pads;

wherein the DRAM chip comprises a first memory region with a first portion of the plurality of DRAM cells and a second memory region with a second portion of the plurality of DRAM cells, wherein the first memory region includes a plurality of first micro pads for testing and the second memory region includes a plurality of second micro pads for testing.

10. The unified IC system of claim 9 , a voltage level of an I/O signal of the second transistor of the logic chip is the same or substantially the same as that of the third transistor in the DRAM bridge area.

11. The unified IC system of claim 9 , wherein the DRAM chip has refresh time over 64 ms.

12. The unified IC system of claim 9 , wherein a 3D structure of the third transistor is the same or substantially the same as a 3D structure of the second transistor.

13. The unified IC system of claim 9 , wherein a size of the DRAM I/O pad is smaller than that of the first micro pad.

14. An unified IC system, comprising:

a DRAM chip comprising:

a plurality of DRAM cells, wherein each DRAM cell comprises a first transistor and a capacitor; and

a DRAM bridge area comprising a plurality of DRAM input/output (I/O) pads and a plurality of third transistors; and

a logic chip physically separated from the DRAM chip, comprising:

a plurality of second transistors; and

a logic bridge area, wherein the logic bridge area comprises a plurality of logic I/O pads, and the plurality of DRAM I/O pads are electrically coupled to the plurality of logic I/O pads;

wherein the DRAM chip does not include a voltage translation circuit or an off-chip driver positioned before the plurality of DRAM input/output (I/O) pads;

wherein the DRAM chip comprises a first memory region with a first portion of the plurality of DRAM cells and a second memory region with a second portion of the plurality of DRAM cells, wherein the first memory region includes a plurality of first bidirectional repeaters and the second memory region includes a plurality of second bidirectional repeaters in the second memory region.

15. The unified IC system of claim 14 , wherein the DRAM chip further comprises a plurality of external bidirectional repeaters in the DRAM bridge area, wherein the second bidirectional repeater is electrically coupled to a corresponding first bidirectional repeater through a second metal line, and the corresponding first bidirectional repeater is electrically coupled to a corresponding external bidirectional repeater through a first metal line, and the corresponding external bidirectional repeater in the DRAM bridge area is electrically coupled to a corresponding DRAM I/O pad through a third metal line.

16. The unified IC system of claim 14 , wherein the DRAM chip further comprises a plurality of external bidirectional repeaters in the DRAM bridge area, wherein the first bidirectional repeater is electrically coupled to a corresponding external bidirectional repeater in the DRAM bridge area through a first metal line, the second bidirectional repeater is electrically coupled to the corresponding external bidirectional repeater in the DRAM bridge area through a second metal line, and the corresponding external bidirectional repeater in the DRAM bridge area is electrically coupled to a corresponding DRAM I/O pad through a third metal line.

17. An unified IC system, comprising:

a DRAM chip comprising:

a plurality of DRAM cells, wherein each DRAM cell comprises a first transistor and a capacitor; and

a DRAM bridge area comprising a plurality of DRAM input/output (I/O) pads and a plurality of third transistors; and

a logic chip physically separated from the DRAM chip, comprising:

a plurality of second transistors; and

a logic bridge area, wherein the logic bridge area comprises a plurality of logic I/O pads, and the plurality of DRAM I/O pads are electrically coupled to the plurality of logic I/O pads;

wherein the plurality of DRAM input/output (I/O) pads comprises a first signal pad related to a data path transmission and a second signal pad related to the data path transmission, and there is no multiplexing circuits positioned before the first signal pads and the second signal pads in the DRAM chip;

wherein the first signal pads are a row address interface and the second signal pads are a column address interface physically independent from the row address interface.

18. The unified IC system of claim 17 , wherein a voltage level of a signal to or from the third transistor is the same or substantially the same as a voltage level of a signal to or from the second transistor.