Diffusion based ex-situ group V (P, As, Sb, Bi) doping in polycrystalline CdTe thin film solar cells
View Patent ↗Described herein is a diffusion-based ex-situ group V element doping method in the CdCl 2 heat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl 3 , AsCl 3 , SbCl 3 , or BiCl 3 , demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>10 15 cm −3 . This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.
1. A method of ex-situ doping cadmium telluride (CdTe) with P, As, Sb, or Bi, comprising:
a) depositing a cadmium telluride (CdTe) film onto a substrate;
b) heat-treating the cadmium telluride film with cadmium chloride (CdCl 2 ); and then
c) contacting the heat-treated cadmium telluride film with a solution or vapor comprising P halide, As halide, Sb halide, or Bi halide, to thereby provide a cadmium telluride film doped with P, As, Sb, or Bi.
2. The method of claim 1 , wherein the substrate further comprises a cadmium selenide, cadmium sulfide, or ZnMgO buffer layer.
3. The method of claim 1 , wherein the cadmium telluride film is polycrystalline.
4. The method of claim 1 , wherein depositing the cadmium telluride film onto the substrate is performed in the absence of P, As, Sb, or Bi.
5. The method of claim 1 , wherein depositing the cadmium telluride film is by closed space sublimation, vapor transport deposition, metal-organic chemical vapor deposition, electrodeposition, elemental vapor transport, or molecular beam epitaxy.
6. The method of claim 1 , wherein the substrate is a transparent conducting oxide (TCO) selected from indium doped tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped ZnO (AZO), or a combination thereof.
7. The method of claim 1 , wherein contacting the heat-treated cadmium telluride film with the solution or vapor is by spin coating, dip coating, slot die, or spraying the solution or vapor onto the cadmium telluride film.
8. The method of claim 1 , wherein contacting the heat-treated cadmium telluride film with the solution or vapor is done under a dry inert gas.
9. The method of claim 1 , wherein the solution or vapor comprises from about 1 to about 1,000 mg/L of the P halide, As halide, Sb halide, or Bi halide.
10. The method of claim 1 , wherein the solution or vapor comprises about 10 mg/L of the P halide, As halide, Sb halide, or Bi halide.
11. The method of claim 1 , wherein after the heat-treated cadmium telluride film is coated with the solution or vapor, the film is further contacted with graphite or a metal contact.
12. The method of claim 1 , wherein after the heat-treated cadmium telluride film is coated with the solution or vapor the film is further heated to activate the P, As, Sb, or Bi, dopants in the film.
13. The method of claim 1 , wherein the P halide, As halide, Sb halide, or Bi halide is AsCl 3 , PCl 3 , SbCl 3 , or BiCl 3 .
14. The method of claim 1 , wherein the heat-treated cadmium telluride film is contacted with a solution or vapor of AsCl 3 .
15. The method of claim 1 , wherein the solution further comprises methanol, ethanol, propanol, isopropanol, butanol, pentanol, benzene, carbon sulfide, or a combination thereof.
16. The method claim 1 , wherein heat-treating the films is performed at a temperature from about 200° C. to about 600° C.
17. The method of claim 1 , wherein after the cadmium telluride film is heat treated, but before it is contacted with the solution or vapor, the cadmium telluride film is cleaned.
18. The method claim 1 , wherein contacting the heat-treated cadmium telluride film with a solution or vapor is done at a temperature of less than about 400° C.