Semiconductor device and method of fabricating the same
A semiconductor device includes a substrate including a cell region, a peripheral region, and a boundary region therebetween, a cell device isolation pattern on the cell region of the substrate to define cell active patterns, a peripheral device isolation pattern on the peripheral region of the substrate to define peripheral active patterns, and an insulating isolation pattern on the boundary region of the substrate, the insulating isolation pattern being between the cell active patterns and the peripheral active patterns, wherein a bottom surface of the insulating isolation pattern includes a first edge adjacent to a side surface of a corresponding one of the cell active patterns, and a second edge adjacent to a side surface of a corresponding one of the peripheral active patterns, the first edge being at a height lower than the second edge, when measured from a bottom surface of the substrate.
1. A semiconductor device, comprising:
a substrate including a cell region, a peripheral region, and a boundary region between the cell region and the peripheral region;
a cell device isolation pattern on the cell region of the substrate to define cell active patterns;
a peripheral device isolation pattern on the peripheral region of the substrate to define peripheral active patterns; and
an insulating isolation pattern on the boundary region of the substrate, the insulating isolation pattern being between the cell active patterns and the peripheral active patterns,
wherein a bottom surface of the insulating isolation pattern includes:
a first edge adjacent to a side surface of a corresponding one of the cell active patterns, and
a second edge adjacent to a side surface of a corresponding one of the peripheral active patterns, the first edge being at a height lower than the second edge, when measured from a bottom surface of the substrate, and the bottom surface being continuously sloped from the first edge to the second edge.
2. The semiconductor device as claimed in claim 1 , wherein:
each of the cell device isolation pattern, the peripheral device isolation pattern, and the insulating isolation pattern has a width in a first direction, the first direction being parallel to the bottom surface of the substrate,
the width of the peripheral device isolation pattern is larger than the width of the cell device isolation pattern, and
the width of the insulating isolation pattern is larger than the width of the peripheral device isolation pattern.
3. The semiconductor device as claimed in claim 2 , wherein a height of the bottom surface of the insulating isolation pattern is gradually lowered from the second edge toward the first edge.
4. The semiconductor device as claimed in claim 1 , wherein the second edge of the bottom surface of the insulating isolation pattern is at a height lower than a bottom surface of the cell device isolation pattern, when measured from the bottom surface of the substrate.
5. The semiconductor device as claimed in claim 4 , wherein:
the cell device isolation pattern includes a first cell device isolation pattern and a second cell device isolation pattern,
each of the first cell device isolation pattern and the second cell device isolation pattern is between adjacent ones of the cell active patterns, and
a bottom surface of the first cell device isolation pattern is at a height lower than a bottom surface of the second cell device isolation pattern, and is at a height higher than the second edge of the bottom surface of the insulating isolation pattern, when measured from the bottom surface of the substrate.
6. The semiconductor device as claimed in claim 5 , wherein each of the first cell device isolation pattern and the second cell device isolation pattern has a width in a first direction that is parallel to the bottom surface of the substrate, the width of the first cell device isolation pattern being larger than the width of the second cell device isolation pattern.
7. The semiconductor device as claimed in claim 4 , wherein the first edge of the bottom surface of the insulating isolation pattern is at a height lower than a bottom surface of the peripheral device isolation pattern, when measured from the bottom surface of the substrate.
8. The semiconductor device as claimed in claim 7 , wherein the second edge of the bottom surface of the insulating isolation pattern is at a same height as the bottom surface of the peripheral device isolation pattern, when measured from the bottom surface of the substrate.
9. The semiconductor device as claimed in claim 1 , wherein the first edge of the bottom surface of the insulating isolation pattern is at a height lower than a bottom surface of the cell device isolation pattern and lower than a bottom surface of the peripheral device isolation pattern, when measured from the bottom surface of the substrate.
10. The semiconductor device as claimed in claim 9 , wherein a height of the bottom surface of the insulating isolation pattern is gradually lowered from the second edge toward the first edge.
11. A semiconductor device, comprising:
a substrate including a cell region, a peripheral region, and a boundary region between the cell region and the peripheral region;
cell active patterns on the cell region of the substrate to protrude from the substrate;
peripheral active patterns on the peripheral region of the substrate to protrude from the substrate; and
an insulating isolation pattern on the boundary region of the substrate, the insulating isolation pattern being between the cell active patterns and the peripheral active patterns,
wherein the insulating isolation pattern is between a corresponding one of the cell active patterns and a corresponding one of the peripheral active patterns,
wherein a bottom surface of the insulating isolation pattern includes a first edge adjacent to a side surface of the corresponding cell active pattern and a second edge adjacent to a side surface of the corresponding peripheral active pattern,
wherein a height of the bottom surface of the insulating isolation pattern is lowered with decreasing distance to the first edge, when measured from a bottom surface of the substrate, and
wherein the first edge of the bottom surface of the insulating isolation pattern is at a height lower than a bottom surface of a cell device isolation pattern and lower than a bottom surface of a peripheral device isolation pattern, when measured from the bottom surface of the substrate.
12. The semiconductor device as claimed in claim 11 , wherein the height of the bottom surface of the insulating isolation pattern is increased with decreasing distance to the second edge, when measured from the bottom surface of the substrate.
13. The semiconductor device as claimed in claim 11 , further comprising the cell device isolation pattern between the cell active patterns, the second edge of the bottom surface of the insulating isolation pattern being at a height lower than the bottom surface of the cell device isolation pattern, when measured from the bottom surface of the substrate.
14. The semiconductor device as claimed in claim 13 , wherein the first edge of the bottom surface of the insulating isolation pattern is at a height lower than the second edge, when measured from the bottom surface of the substrate.
15. The semiconductor device as claimed in claim 13 , further comprising the peripheral device isolation pattern between the peripheral active patterns, the first edge of the bottom surface of the insulating isolation pattern being at a height lower than the bottom surface of the peripheral device isolation pattern, when measured from the bottom surface of the substrate.
16. The semiconductor device as claimed in claim 15 , wherein the bottom surface of the peripheral device isolation pattern is at a height lower than the bottom surface of the cell device isolation pattern, when measured from the bottom surface of the substrate.
17. The semiconductor device as claimed in claim 11 , further comprising:
the cell device isolation pattern between the cell active patterns; and
the peripheral device isolation pattern between the peripheral active patterns.
18. The semiconductor device as claimed in claim 17 , wherein:
each of the cell device isolation pattern, the peripheral device isolation pattern, and the insulating isolation pattern has a width in a first direction that is parallel to the bottom surface of the substrate,
the width of the peripheral device isolation pattern is larger than the width of the cell device isolation pattern, and
the width of the insulating isolation pattern is larger than the width of the peripheral device isolation pattern.
19. A semiconductor device, comprising:
a substrate including a cell region, a peripheral region, and a boundary region between the cell region and the peripheral region;
a cell device isolation pattern on the cell region of the substrate to define cell active patterns;
a peripheral device isolation pattern on the peripheral region of the substrate to define peripheral active patterns; and
an insulating isolation pattern on the boundary region of the substrate and between the cell active patterns and the peripheral active patterns,
wherein the cell device isolation pattern includes a first cell device isolation pattern having a first width and a second cell device isolation pattern having a second width smaller than the second width,
wherein a bottom surface of the insulating isolation pattern includes a first portion adjacent to the cell active patterns and a second portion adjacent to the peripheral active patterns, the second portion being at a height lower than the first portion, when measured from a bottom surface of the substrate, and
wherein a bottom surface of the first cell device isolation pattern is at a height lower than a bottom surface of the second cell device isolation pattern and is at a height higher than the second portion of the bottom surface of the insulating isolation pattern, when measured from the bottom surface of the substrate.
20. The semiconductor device as claimed in claim 19 , wherein:
the first portion of the bottom surface of the insulating isolation pattern is at a substantially same height as the bottom surface of the first cell device isolation pattern, when measured from the bottom surface of the substrate, and
the second portion of the bottom surface of the insulating isolation pattern is at a substantially same height as a bottom surface of the peripheral device isolation pattern, when measured from the bottom surface of the substrate.