Method of fabricating semiconductor device including standard-cell-adapted power grid arrangement
A method (of fabricating a power grid (PG) arrangement in a semiconductor) includes: forming a first conductive layer including segments which are conductive, including forming first segments designated for a first reference voltage and second segments designated for a second reference voltage, and interspersing the first and second segments; relative to a first direction; and forming a second conductive layer over the first conductive layer, the second conductive layer including segments that are conductive, including forming third segments designated for the first reference voltage and fourth segments designated for the second reference voltage, interspersing the third and fourth segments relative to a second direction, the second direction being perpendicular to the first direction, and arranging the segments in the second conductive layer substantially asymmetrically including, relative to the first direction, locating each fourth segment substantially asymmetrically between corresponding adjacent ones of the third segments.
1. A method of fabricating a power grid (PG) arrangement in a semiconductor device, the method comprising:
forming a first conductive layer including segments which are conductive, the forming a first conducting layer including:
forming first segments designated for a first reference voltage and second segments designated for a second reference voltage; and
interspersing the first and second segments, relative to a first direction; and
forming a second conductive layer over the first conductive layer, the second conductive layer including segments that are conductive, the forming a second conductive layer including:
forming third segments designated for the first reference voltage and fourth segments designated for the second reference voltage;
interspersing the third and fourth segments relative to a second direction, the second direction being perpendicular to the first direction; and
arranging the segments in the second conductive layer substantially asymmetrically including:
relative to the first direction, locating each fourth segment substantially asymmetrically between corresponding adjacent ones of the third segments.
2. The method of claim 1 , wherein:
for the substantially asymmetric arrangement of the segments in the second conductive layer, relative to the first direction, arranging fourth segments between corresponding adjacent ones of the third segments to exhibit a same repeating asymmetric pitch pattern.
3. The method of claim 2 , wherein:
the second conductive layer has Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)] as the repeating asymmetric pitch pattern, where:
V1(1) represents a first given one of the third segments;
V2(1) represents a first given one of the fourth segments; and
V1(2) represents a second given one of the third segments;
the first and second given ones of the third segments are correspondingly left and right adjacent to the first given one of the fourth segments; and
Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)] is as follows:
Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)] =3λ:4λ,
where:
λ represents a base distance such that
λ= k *CPP,
where:
k is a positive integer; and
CPP represents a contacted polysilicon pitch of a corresponding semiconductor process/technology node.
4. The method of claim 3 , wherein:
k=4 such that Φ (V2L˜V1C):(V1C˜V2R) is as follows:
Φ (V2L˜V1C):(V1C˜V2R) =12CPP:16CPP.
5. The method of claim 2 , wherein:
the second conductive layer has Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)]:[V1(2)˜V2(2)]:[V2(2)˜V1(3)] as the repeating asymmetric pitch pattern, where:
V1(1) represents a first given one of the third segments;
V2(1) represents a first given one of the fourth segments;
V1(2) represents a second given one of the third segments;
V2(2) represents a second given one of the fourth segments; and
V1(3) represents a third given one of the third segments;
the first and second given ones of the third segments are correspondingly left and right adjacent to the first given one of the fourth segments;
the first and second given ones of the fourth segments are correspondingly left and right adjacent to the second given one of the third segments;
the second and third given ones of the third segments are correspondingly left and right adjacent to the second given one of the fourth segments; and
Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)]:[V1(2)˜V2(2)]:[V2(2)˜V1(3)] is as follows:
Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)]:[V1(2)˜V2(2)]:[V2(2)˜V1(3)] =4λ:3λ:3λ:4λ;
where:
λ represents a base distance such that
λ= k *CPP;
where:
k being a positive integer; and
CPP representing a contacted polysilicon pitch of a corresponding semiconductor process/technology node.
6. The method of claim 5 , wherein:
k=4 such that Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)]:[V1(2)˜V2(2)]:[V2(2)˜V1(3)] is as follows:
Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)]:[V1(2)˜V2(2)]:[V2(2)˜V1(3)] =16CPP:12CPP:12CPP:16CPP.
7. The method of claim 1 , further comprising:
configuring the third and fourth segments as short pillars, a length of each short pillar segment being approximately a minimum length for a corresponding semiconductor process/technology node; and
configuring the first and second segments are stripes.
8. The method of claim 1 , further comprising:
for any given one of the third segments and any given one of the fourth segments which is adjacent to the given one of third segments, setting a distance between the given one of the third segments and the given one of the fourth segments to be a multiple of a base distance λ such that
λ= k *CPP;
k being a positive integer; and
CPP representing a contacted polysilicon pitch of a corresponding semiconductor process/technology node.
9. The method of claim 1 , wherein:
the forming a first conducting layer further includes:
aligning the first and second segments substantially parallel to the first direction; and
the forming a second conductive layer further includes:
aligning the third and fourth segments substantially parallel to the second direction.
10. A method of fabricating a power grid (PG) in a semiconductor device, the method comprising:
forming a first conductive layer, the forming a first conducting layer including:
forming first segments designated for a first reference voltage and second segments designated for a second reference voltage; and
interspersing the first and second segments relative to a first direction;
forming a second conductive layer over the first conductive layer, the second conductive layer including segments that are conductive, the forming a second conductive layer including:
forming third segments designated for the first reference voltage and fourth segments designated for the second reference voltage;
interspersing the third and fourth segments relative to a second direction, the second direction being perpendicular to the first direction;
for any given one of third segments and any given one of the fourth segments which is adjacent to the given one of third segments, setting a distance therebetween which is both a multiple of four and a multiple of CPP, where CPP represents a contacted polysilicon pitch of a corresponding semiconductor process/technology node; and
arranging, relative to the first direction, each fourth segment substantially asymmetrically between corresponding adjacent ones of the third segments.
11. The method of claim 10 , further comprising:
uniformly spacing the fourth segment between the third segments so that, relative to the first direction, locations of fourth segments between corresponding adjacent ones of the third segments exhibit a same repeating asymmetric pitch pattern.
12. The method of claim 11 , further comprising:
setting Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)] as the repeating asymmetric pitch pattern for the second conductive layer, where:
V1(1) represents a first given one of the third segments;
V2(1) represents a first given one of the fourth segments; and
V1(2) represents a second given one of the third segments;
the first and second given ones of the third segments being correspondingly left and right adjacent to the first given one of the fourth segments; and
wherein Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)] is as follows:
Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)] =3λ:4λ,
where:
λ represents a base distance such that
λ= k *CPP,
where:
k is a positive integer; and
CPP represents a contacted polysilicon pitch of a corresponding semiconductor process/technology node.
13. The method of claim 11 , further comprising:
setting Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)]:[V1(2)˜V2(2)]:[V2(2)˜V1(3)] as the repeating asymmetric pitch pattern for the second conductive layer, where:
V1(1) represents a first given one of the third segments;
V2(1) represents a first given one of the fourth segments;
V1(2) represents a second given one of the third segments;
V2(2) represents a second given one of the fourth segments; and
V1(3) represents a third given one of the third segments;
the first and second given ones of the third segments being correspondingly left and right adjacent to the first given one of the fourth segments;
the first and second given ones of the fourth segments being correspondingly left and right adjacent to the second given one of the third segments;
the second and third given ones of the third segments being correspondingly left and right adjacent to the second given one of the fourth segments; and
wherein Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)]:[V1(2)˜V2(2)]:[V2(2)˜V1(3)] is as follows:
Φ [V1(1)˜V2(1)]:[V2(1)˜V1(2)]:[V1(2)˜V2(2)]:[V2(2)˜V1(3)] =4λ:3λ:3λ:4λ;
where:
λ represents a base distance such that
λ= k *CPP;
where:
k being a positive integer; and
CPP representing a contacted polysilicon pitch of a corresponding semiconductor process/technology node.
14. The method of claim 10 , wherein:
the forming a first conducting layer further includes:
aligning the first and second segments substantially parallel to the first direction; and
the forming a second conductive layer further includes:
aligning the third and fourth segments substantially parallel to the second direction.
15. A method of fabricating a power grid (PG) arrangement in a semiconductor device comprising:
forming a first conductive layer including segments which are conductive, the forming a first conductive layer including:
forming first segments designated for a first reference voltage and second segments designated for a second reference voltage; and
interspersing the first and second segments relative to a first direction; and
forming a second conductive layer over the first conductive layer, the second conductive layer including segments that are conductive, the forming a second conductive layer including:
forming third segments designated for the first reference voltage and fourth segments designated for the second reference voltage;
interspersing the third and fourth segments relative to a second direction, the second direction being perpendicular to the first direction;
arranging the third segments to have a first pitch;
arranging the fourth segments to have the first pitch;
for selected portions of each of the first and second segments which have a length substantially equal to the first pitch, configuring each of the selected portions to have a corresponding stub resistance; and
sizing the first pitch to keep the stub resistance below a threshold resistance.
16. The method of claim 15 , further comprising:
setting the first pitch to be pitch P X3&4 ;
setting each of the first and second segments to have a second pitch P Y1&2 ; and
setting a ratio of the pitch P Y1&2 to the pitch P X3&4 to be
ratio=( P Y1&2 )/( P X3&4 )≈¼.
17. The method of claim 16 , further comprising:
setting the ratio of the pitch P Y1&2 to the pitch P X3&4 to be
ratio=( P Y1&2 )/( P X3&4 )≈8.4CPP/30CPP,
where CPP represents a contacted polysilicon pitch of a corresponding semiconductor process/technology node.
18. The method of claim 15 , further comprising:
setting the first segments to have a second pitch;
setting the second segments to have the second pitch; and
setting the first pitch to be smaller than the first pitch.
19. The method of claim 15 , wherein:
an arrangement of the segments in the second conductive layer is substantially asymmetric such that:
a given third segment is located, relative to the first direction, substantially asymmetrically between corresponding adjacent ones of the third segments; and
a given fourth segment is located, relative to the first direction, substantially asymmetrically between corresponding adjacent ones of the third segments.
20. The method of claim 15 , wherein:
the forming a first conducting layer further includes:
aligning the first and second segments substantially parallel to the first direction; and
the forming a second conductive layer further includes:
aligning the third and fourth segments substantially parallel to the second direction.