Stacked inductor having a discrete metal-stack pattern
An inductor includes a first metallization layer multi-turn trace. The inductor also includes a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via. The inductor further includes a plurality of discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.
1. An inductor, comprising:
a first metallization layer multi-turn trace;
a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via; and
a plurality of discontinuous discrete third metallization layer trace segments, each segment coupled to and stacked on a portion of the second metallization layer multi-turn trace through a plurality of second vias.
2. The inductor of claim 1 , in which the plurality of discontinuous discrete third metallization layer trace segments follow a shape of the second metallization layer multi-turn trace according to a predetermined pattern.
3. The inductor of claim 1 , in which the first metallization layer multi-turn trace comprises a line-trace segment coupled to an angled joint trace segment and/or an angled trace segment.
4. The inductor of claim 1 , in which a thickness of a first one of the plurality of discontinuous discrete third metallization layer trace segments is different from a thickness of a second one of the plurality of discontinuous discrete third metallization layer trace segments.
5. The inductor of claim 1 , in which the plurality of discontinuous discrete third metallization layer trace segments comprise a line-trace segment, an angled joint trace segment, or an angled trace segment.
6. The inductor of claim 1 , in which the inductor is integrated into an integrated passive device (IPD).
7. The inductor of claim 6 , in which the IPD is integrated in a radio frequency (RF) filter.
8. The inductor of claim 6 , in which the IPD is integrated in a radio frequency (RF) module.
9. A method for fabricating a stacked inductor having discrete metal-stack patterns, comprising:
forming a first metallization layer multi-turn trace;
forming a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via; and
forming a plurality of discontinuous discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.
10. The method of claim 9 , in which forming the plurality of discontinuous discrete third metallization layer trace segments comprises depositing the plurality of discontinuous discrete third metallization layer trace segments following a shape of the second metallization layer multi-turn trace according to a predetermined pattern.
11. The method of claim 9 , in which forming the first metallization layer multi-turn trace comprises forming line-trace segments coupled to angled joint trace segments and/or angled trace segments.
12. The method of claim 9 , in which forming the plurality of discontinuous discrete third metallization layer trace segments comprises forming line-trace segments, angled trace segments or angled joint trace segments.
13. The method of claim 9 , further comprising integrating the stacked inductor into an integrated passive device (IPD).
14. The method of claim 13 , further comprising integrating the IPD in a radio frequency (RF) filter.
15. The method of claim 13 , further comprising integrating the IPD in a radio frequency (RF) module.
16. A radio frequency front-end (RFFE) module comprising:
a semiconductor die; and
an integrated passive device (IPD) die coupled to the semiconductor die, the IPD die comprising an inductor, the inductor comprising:
a first metallization layer multi-turn trace,
a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via, and
a plurality of discontinuous discrete third metallization layer trace segments, each segment coupled to and stacked on a portion of the second metallization layer multi-turn trace through a plurality of second vias.
17. The RFFE module of claim 16 , in which the plurality of discontinuous discrete third metallization layer trace segments follow a shape of the second metallization layer multi-turn trace according to a predetermined pattern.
18. The RFFE module of claim 16 , in which the first metallization layer multi-turn trace comprises a line-trace segment coupled to an angled joint trace segment and/or an angled trace segment.
19. The RFFE module of claim 16 , in which a thickness of a first one of the plurality of discontinuous discrete third metallization layer trace segments is different from a thickness of a second one of the plurality of discontinuous discrete third metallization layer trace segments.
20. The RFFE module of claim 16 , in which the plurality of discontinuous discrete third metallization layer trace segments comprise a line-trace segment, an angled joint trace segment, or an angled trace segment.