Infrared detector having a directly bonded silicon substrate present on top thereof
A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiO x , where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.
1. An infrared detector comprising:
a silicon wafer having a first bonding surface;
an infrared detector wafer comprising an adhesion layer and having a second bonding surface formed on top of the adhesion layer; and
a bonding interface formed by directly boding the first bonding surface and the second bonding surface.
2. The infrared detector of claim 1 , wherein the adhesion layer comprises a SiO x layer on the first bonding surface, where x ranges 1.0 to 2.0.
3. The infrared detector of claim 2 , wherein a thickness of the SiO x layer is 1000 Angstroms or less.
4. The infrared detector of claim 2 , wherein a thickness of the SiO x layer is 500 Angstroms or less.
5. The infrared detector of claim 1 , wherein the bonding interface does not have an epoxy layer as an adhesive layer.
6. The infrared detector of claim 1 , wherein the bonding interface does not have an anti-reflective layer.
7. The infrared detector of claim 1 , wherein the infrared detector wafer comprises a dual-band pixel that includes a first infrared band absorber and a second infrared band absorber.
8. The infrared detector of claim 1 , wherein the infrared detector wafer comprises a single-band pixel that includes a single infrared band absorber.
9. An infrared detector comprising:
a silicon wafer having a first bonding surface;
an infrared detector wafer comprising an adhesion layer and having a second bonding surface formed on top of the adhesion layer, wherein a thickness of the adhesion layer is 1000 Angstroms or less; and
a bonding interface formed by directly boding the first bonding surface and the second bonding surface.
10. The infrared detector of claim 9 , wherein the thickness of the adhesion layer is 500 Angstroms or less.
11. The infrared detector of claim 9 , wherein the adhesion layer comprises a SiO x layer on the first bonding surface, where x ranges 1.0 to 2.0.
12. The infrared detector of claim 9 , wherein the bonding interface does not have an epoxy layer as an adhesive layer.
13. The infrared detector of claim 9 , wherein the bonding interface does not have an anti-reflective layer.
14. The infrared detector of claim 9 , wherein the infrared detector wafer comprises a dual-band pixel that includes a first infrared band absorber and a second infrared band absorber.
15. The infrared detector of claim 9 , wherein the infrared detector wafer comprises a single-band pixel that includes a single infrared band absorber.
16. An infrared detector comprising:
a silicon wafer having a first bonding surface;
an infrared detector wafer comprising an adhesion layer and having a second bonding surface formed on top of the adhesion layer and a dual-band pixel that includes a first infrared band absorber and a second infrared band absorber, wherein a thickness of the adhesion layer is 1000 Angstroms or less; and
a bonding interface formed by directly boding the first bonding surface and the second bonding surface.
17. The infrared detector of claim 16 , wherein the thickness of the adhesion layer is 500 Angstroms or less.
18. The infrared detector of claim 16 , wherein the adhesion layer comprises a SiO x layer on the first bonding surface, where x ranges 1.0 to 2.0.
19. The infrared detector of claim 16 , wherein the bonding interface does not have an epoxy layer as an adhesive layer.
20. The infrared detector of claim 16 , wherein the bonding interface does not have an anti-reflective layer.