Semiconductor storage device and information processor
A semiconductor storage device has a plurality of memory cells that are arranged in a first direction and store first data, a plurality of first wiring pairs that are provided corresponding to the plurality of memory cells arranged in the first direction, and supply second data multiplied with the first data, a second wiring pair that is provided corresponding to two memory cells adjacent to each other in the first direction, and outputs multiplication data obtained by multiplying the first data stored in the two memory cells with the corresponding second data on the first wiring pair, and a third wiring pair in which potentials are changed depending on an addition result only when the addition result obtained by adding two multiplication data output to the second wiring pair to each other is not zero.
1. A semiconductor storage device comprising:
a plurality of memory cells that are arranged in a first direction and store first data;
a plurality of first wiring pairs that are provided corresponding to the plurality of memory cells arranged in the first direction, and supply second data multiplied with the first data;
a second wiring pair that is provided corresponding to two memory cells adjacent to each other in the first direction, to which multiplication data are output from the two memory cells, the multiplication data being obtained by multiplying the first data stored in the two memory cells with the second data on the first wiring pairs corresponding to the two memory cells; and
a third wiring pair in which potentials are changed depending on an addition result only when the addition result obtained by adding two multiplication data output to the second wiring pair to each other is not zero, wherein
in the third wiring pair, potentials are changed depending on the addition result only when the two multiplication data is identical to each other.
2. The semiconductor storage device according to claim 1 , wherein
a probability that the addition result obtained by adding the two multiplication data to each other is not zero is one half a combination of all the addition results obtained by adding the two multiplication data to each other.
3. The semiconductor storage device according to claim 1 , wherein
in one third wiring of the third wiring pair, a potential is raised or lowered by a predetermined potential change width only when the addition result obtained by adding the two multiplication data to each other is not zero.
4. The semiconductor storage device according to claim 3 , wherein
the predetermined potential change width is twice a minimum potential change width of the third wiring depending on a minimum change value of a product-sum operation.
5. The semiconductor storage device according to claim 3 , wherein
in one third wiring of the third wiring pair, a potential is raised or lowered by the predetermined potential change width when the multiplication data is updated and the addition result obtained by adding the two multiplication data to each other is not zero.
6. The semiconductor storage device according to claim 1 , wherein
one second wiring of the second wiring pair is set to a logic depending on multiplication data obtained by multiplying the first data stored in one memory cell of the two memory cells adjacent to each other, and the second data on the first wiring pair corresponding to the one memory cell, and
the other second wiring of the second wiring pair is set to a logic depending on multiplication data obtained by multiplying the first data stored in the other memory cell of the two memory cells adjacent to each other, and the second data on the first wiring pair corresponding to the other memory cell.
7. A semiconductor storage device comprising:
a plurality of memory cells that are arranged in a first direction and store first data;
a plurality of first wiring pairs that are provided corresponding to the plurality of memory cells arranged in the first direction, and supply second data multiplied with the first data;
a second wiring pair that is provided corresponding to two memory cells adjacent to each other in the first direction, to which multiplication data are output from the two memory cells, the multiplication data being obtained by multiplying the first data stored in the two memory cells with the second data on the first wiring pairs corresponding to the two memory cells; and
a third wiring pair in which potentials are changed depending on an addition result only when the addition result obtained by adding two multiplication data output to the second wiring pair to each other is not zero, wherein
one second wiring of the second wiring pair is set to a logic depending on multiplication data obtained by multiplying the first data stored in one memory cell of the two memory cells adjacent to each other, and the second data on the first wiring pair corresponding to the one memory cell,
the other second wiring of the second wiring pair is set to a logic depending on multiplication data obtained by multiplying the first data stored in the other memory cell of the two memory cells adjacent to each other, and the second data on the first wiring pair corresponding to the other memory cell,
the one second wiring of the second wiring pair is discharged, and a potential of the one second wiring is lowered when multiplication data obtained by multiplying the first data stored in the one memory cell of the two memory cells adjacent to each other, and the second data on the first wiring pair corresponding to the one memory cell is a predetermined logic, and
the other second wiring of the second wiring pair is discharged, and a potential of the other second wiring is lowered when multiplication data obtained by multiplying the first data stored in the other memory cell of the two memory cells adjacent to each other, and the second data on the first wiring pair corresponding to the other memory cell is a predetermined logic.
8. The semiconductor storage device according to claim 7 , wherein
the multiplication data becomes the predetermined logic when logics of the first data and the second data to be multiplied, are different from each other.
9. The semiconductor storage device according to claim 1 , wherein
the second wiring pair is provided for the two memory cells adjacent to each other in the first direction.
10. The semiconductor storage device according to claim 1 , further comprising
a transfer control circuit that controls whether or not to change potentials of the third wiring pair based on a value obtained by adding the two multiplication data output to the second wiring pair to each other.
11. The semiconductor storage device according to claim 10 , wherein
the second wiring pair is connected to the transfer control circuit,
a high-order bit of multiplication data obtained by multiplying the first data stored in one memory cell of the two memory cells adjacent to each other in the first direction with the corresponding second data is output to one second wiring of the second wiring pair,
a low-order bit of multiplication data obtained by multiplying the first data stored in the other memory cell of the two memory cells adjacent to each other in the first direction with the corresponding second data is output to the other second wiring of the second wiring pair, and
the transfer control circuit changes a potential of any one of the third wiring pair when logics of the second wiring pair are identical to each other.
12. The semiconductor storage device according to claim 11 , wherein the transfer control circuit comprises
a first transfer control circuit that lowers a potential of one third wiring of the third wiring pair when both logics of the second wiring pair are first logics, and
a second transfer control circuit that raises a potential of the other third wiring of the third wiring pair when both logics of the second wiring pair are second logics.
13. The semiconductor storage device according to claim 1 , wherein
the first data is a weight coefficient of a neural network,
the second data is input data of the neural network,
the second wiring pair transmits multiplication data obtained by multiplying the first data and the second data, and
the third wiring pair transmits product sum data obtained by adding the multiplication data to one another, the multiplication data being transferred through a plurality of the second wiring pairs.
14. The semiconductor storage device according to claim 1 , wherein
the third wiring pair is arranged corresponding to the plurality of memory cells arranged in the first direction.
15. A semiconductor storage device comprising:
a plurality of memory cells that are arranged in a first direction and store first data;
a plurality of first wiring pairs that are provided corresponding to the plurality of memory cells arranged in the first direction, and supply second data multiplied with the first data;
a second wiring pair that is provided corresponding to two memory cells adjacent to each other in the first direction, to which multiplication data are output from the two memory cells, the multiplication data being obtained by multiplying the first data stored in the two memory cells with the second data on the first wiring pairs corresponding to the two memory cells; and
a third wiring pair in which potentials are changed depending on an addition result only when the addition result obtained by adding two multiplication data output to the second wiring pair to each other is not zero, wherein
the first wiring pair is a word line pair,
the second wiring pair is a first bit line pair, and
the third wiring pair is a second bit line pair.
16. An information processor comprising:
a learning unit configured to perform learning processing of updating a weight coefficient of a neural network by using input data and output data for learning;
a semiconductor storage device configured to perform a product-sum operation that adds multiplication data to each other according to a network configuration of the neural network, the multiplication data obtained by multiplying the input data with the weight coefficient;
a calculation model generator configured to generate a calculation model including the neural network in which the learning unit performs the learning processing; and
an information processor configured to give the input data to the calculation model, and perform a predetermined information processing based on a result obtained by performing a product-sum operation in the neural network of the calculation model, wherein
the semiconductor storage device comprises:
a plurality of memory cells that are arranged in a first direction, and store the weight coefficient;
a plurality of first wiring pairs that are provided corresponding to the plurality of the memory cells arranged in the first direction, and supply the input data multiplied with the weight coefficient;
a second wiring pair that is provided corresponding to the two memory cells adjacent to each other in the first direction, to which multiplication data are output from the two memory cells, the multiplication data being obtained by multiplying the weight coefficient stored in the two memory cells with the input data on the first wiring pairs corresponding to the two memory cells; and
a third wiring pair in which potentials are changed depending on an addition result only when the addition result obtained by adding the two multiplication data output to the second wiring pair from each of the two memory cells to each other is not zero, and
a result of the product-sum operation is output from the third wiring pair, wherein
in the third wiring pair, potentials are changed depending on the addition result only when the two multiplication data is identical to each other.