Semiconductor device and manufacturing method thereof
In a method of manufacturing a semiconductor device, a source/drain structure is formed over a substrate, a first interlayer dielectric (ILD) layer including one or more dielectric layers is formed over the source/drain structure, a first opening is formed in the first ILD layer to at least partially expose the source/drain structure, a sacrificial layer is formed on an inner wall of the first opening, a first insulating layer is formed on the sacrificial layer, a conductive layer is formed on the first insulating layer so as to form a source/drain contact in contact with the source/drain structure, the sacrificial layer is removed to form a space between the first insulating layer and the first ILD layer, and a second insulating layer is formed over the source/drain contact and the first ILD layer to cap an upper opening of the space, thereby forming an air gap.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a source/drain structure over a substrate;
forming a first interlayer dielectric (ILD) layer including one or more dielectric layers over the source/drain structure;
forming a first opening in the first ILD layer to at least partially expose the source/drain structure;
forming a sacrificial layer on an inner wall of the first opening so that a part of and upper surface of the source/drain structure is exposed from the sacrificial layer;
forming a first insulating layer on the sacrificial layer and on the exposed part of the source/drain structure;
forming a conductive layer on the first insulating layer so as to form a source/drain contact in contact with the source/drain structure;
removing the sacrificial layer to form a space between the first insulating layer and the first ILD layer; and
forming a second insulating layer over the source/drain contact and the first ILD layer to cap an upper opening of the space, thereby forming an air gap.
2. The method of claim 1 , wherein the sacrificial layer includes one of amorphous or polycrystalline Si, SiGe or Ge.
3. The method of claim 1 , further comprising forming a metal gate structure, wherein the air gap is disposed between the source/drain contact and the metal gate structure.
4. The method of claim 3 , wherein:
the metal gate structure includes a metal gate electrode and gate sidewall spacers on opposing side faces of the metal gate electrode, and
a part of the first ILD layer is disposed between the air gap and one of the gate sidewall spacers.
5. The method of claim 1 , wherein the second insulating layer is formed such that a part of the second insulating layer penetrates into the space.
6. The method of claim 5 , wherein a penetrating amount of the second insulating layer into the space is 5-20% of a total height of the space.
7. The method of claim 1 , further comprising, after the sacrificial layer is formed and before the first insulating layer is formed:
forming an oxide layer on the sacrificial layer and the part of the upper surface of the source/drain structure;
performing a plasma treatment on the oxide layer; and
performing a wet cleaning operation.
8. The method of claim 7 , wherein the plasma treatment comprises oxygen plasma.
9. The method of claim 1 , further comprising:
forming a second ILD layer on the second insulating layer;
forming a second opening in the second ILD layer and the second insulating layer to at least partially expose the source/drain contact; and
filling the second opening with a second conductive material to form an upper contact in contact with the source/drain contact.
10. A method of manufacturing a semiconductor device, the method comprising:
forming a source/drain epitaxial layer over a substrate;
forming a first interlayer dielectric (ILD) layer over the source/drain epitaxial layer;
forming a first insulating layer made of a different material than the first ILD layer over the first ILD layer;
forming a second ILD layer made of a different material than the first insulating layer over the first insulating layer;
forming a first opening passing through the second ILD layer, the first insulating layer and the first ILD layer to at least partially expose the source/drain epitaxial layer;
forming a sacrificial layer on an inner wall of the first opening so that a part of the source/drain epitaxial layer is exposed from the sacrificial layer;
forming a second insulating layer on the sacrificial layer and on the exposed part of the source/drain epitaxial layer;
forming a conductive layer on the second insulating layer so as to form a source/drain contact in contact with the source/drain epitaxial layer;
removing the sacrificial layer to form a space between the second insulating layer and the second ILD layer, first insulating layer and first ILD layer; and
forming a third insulating layer over the source/drain contact and the second ILD layer to cap an upper opening of the space, thereby forming an air gap.
11. The method of claim 10 , wherein the sacrificial layer includes amorphous or polycrystalline Si.
12. The method of claim 10 , wherein the sacrificial layer includes a dielectric material different from the first and second ILD layer and the first and second insulating layers.
13. The method of claim 10 , wherein the second insulating layer includes silicon nitride.
14. The method of claim 10 , wherein the third insulating layer includes silicon nitride.
15. The method of claim 10 , wherein the source/drain contact includes a liner contact layer and a body contact layer made of Co.
16. The method of claim 10 , further comprising, before the source/drain contact is formed, forming a silicide layer on the source/drain epitaxial layer.
17. A method of manufacturing a semiconductor device, the method comprising:
forming a source/drain epitaxial layer over a substrate;
forming a first interlayer dielectric (ILD) layer over the source/drain epitaxial layer;
forming a first insulating layer made of a different material than the first ILD layer over the first ILD layer;
forming a second ILD layer made of a different material than the first insulating layer over the first insulating layer;
forming a first opening passing through the second ILD layer, the first insulating layer and the first ILD layer to at least partially expose the source/drain epitaxial layer;
forming a sacrificial layer on an inner wall of the first opening;
forming a second insulating layer on the sacrificial layer;
forming a silicide layer on the source/drain epitaxial layer;
forming a conductive layer on the second insulating layer so as to form a source/drain contact in contact with the silicide layer;
removing the sacrificial layer to form a space between the second insulating layer and the second ILD, first insulating and first ILD layer; and
forming a third insulating layer over the source/drain contact and the second ILD layer to cap an upper opening of the space, thereby forming an air gap, wherein:
the sacrificial layer is a metal layer; and
the silicide layer is formed from the metal layer by a thermal treatment.
18. The method of claim 17 , wherein the metal layer is made of one of Ti, Co, W, Ta or Ru.
19. The method of claim 17 , wherein the silicide layer is located below the air gap.
20. The method of claim 17 , wherein after the silicide layer is formed, a part of the second insulating layer is removed to expose the silicide layer.