Duplexers and related devices for 5G/6G and subsequent protocols and for mm-wave and terahertz applications
A ring resonator based T-shaped duplexer for use in communication systems, the T-shaped duplexer comprising a T-shaped microstrip duplexer body having a first rectangular-shaped body section and a second rectangular-shaped body section that extends from the first-rectangular shaped section in a perpendicular position relative to the first rectangular-shaped section, three connection ports including a first connection port disposed at an open end of the second rectangular-shaped body section, a second connection port disposed at one end of the first rectangular-shaped body section, and a third connection port disposed at another end of the first rectangular-shaped body section, and two bandpass filters, each bandpass filter comprising a ring resonator structure having a circular shape, an outer edge of the ring resonator structure being connected to the first rectangular-shaped body section of the T-shaped microstrip duplexer body, wherein each of the two bandpass filters creates an Electromagnetically Induced Transparency (EIT) window within a frequency absorption region of the bandpass filter to allow a signal to pass at a pre-tuned frequency band.
1. A ring resonator based T-shaped duplexer for use in communication systems, the T-shaped duplexer comprising:
a T-shaped microstrip duplexer body having a first rectangular-shaped body section and a second rectangular-shaped body section that extends from the first-rectangular shaped section in a perpendicular position relative to the first rectangular-shaped section;
three connection ports including a first connection port disposed at an open end of the second rectangular-shaped body section, a second connection port disposed at one end of the first rectangular-shaped body section, and a third connection port disposed at another end of the first rectangular-shaped body section; and
two bandpass filters, each bandpass filter comprising a ring resonator structure having a circular shape, an outer edge of the ring resonator structure being connected to the first rectangular-shaped body section of the T-shaped microstrip duplexer body;
wherein each of the two bandpass filters creates an Electromagnetically Induced Transparency (EIT) window within a frequency absorption region of the bandpass filter to allow a signal to pass at a pre-tuned frequency band.
2. The ring resonator based T-shaped duplexer of claim 1 wherein in a first bandpass filter of the two bandpass filters the ring resonator structure has an off-center cut to create two unequal portions of the ring resonator structure and operates as an EIT-based filter,
and wherein in a second bandpass filter of the two bandpass filters the ring resonator structure has a centered cut to create two equal portions of the ring resonator structure and operates as a Fano-based filter.
3. The ring resonator based T-shaped duplexer of claim 1 wherein a first bandpass filter of the two bandpass filters allows a signal to pass at a first pre-tuned frequency band and a second bandpass filter of the two bandpass filters allows a signal to pass at a second pre-tuned frequency band.
4. The ring resonator based T-shaped duplexer of claim 3 wherein a frequency isolation is provided between the first pre-tuned frequency band and the second pre-tuned frequency band.
5. The ring resonator based T-shaped duplexer of claim 3 wherein the first pre-tuned frequency band has a greater bandwidth than that of the second pre-tuned frequency band thereby enabling the T-shaped duplexer to operate as an asymmetric duplexer.
6. The ring resonator based T-shaped duplexer of claim 1 wherein the T-shaped duplexer has a thin depth compared to its overall length and width thereby providing the T-shaped duplexer with a planar shape.
7. The ring resonator based T-shaped duplexer of claim 6 wherein the T-shaped duplexer is disposed on a metal layer of an integrated circuit chip.
8. The ring resonator based T-shaped duplexer of claim 7 wherein the T-shaped duplexer has multiple ground patches disposed near the ends of the T-shaped microstrip duplexer body to improve isolation between the two bandpass filters.
9. The ring resonator based T-shaped duplexer of claim 7 wherein the T-shaped duplexer is formed on a lower metal layer of a metal layer stack of the integrated circuit chip using one of bulk CMOS fabrication technology, BiCMOS fabrication technology, and GaAs fabrication technology.
10. The ring resonator based T-shaped duplexer of claim 7 wherein the T-shaped duplexer is disposed on a lower metal layer of a metal layer stack of the integrated circuit chip, and an antenna-on-chip (AoC) is disposed on an upper first metal layer of the metal layer stack and is connected to the T-shaped duplexer by multiple through-vias between the upper metal layer and the lower metal layer.
11. The ring resonator based T-shaped duplexer of claim 10 wherein a transmitter and a receiver are disposed on a second lower metal layer below the T-shaped duplexer and are connected to the T-shaped duplexer by multiple through-vias between the lower metal layer and the second lower metal layer.
12. The ring resonator based T-shaped duplexer of claim 10 wherein the antenna-on-chip (AoC) is one of a patch antenna, a dipole antenna, a slot antenna, and a bowtie antenna.
13. The ring resonator based T-shaped duplexer of claim 7 wherein an area of the T-shaped duplexer disposed on the lower metal layer is equal to or less than an area of the Antenna on Chip (AoC) disposed on the upper metal layer.
14. A ring resonator based bandpass filter device for use in communication systems, the bandpass filter device comprising:
a microstrip structure having a rectangular shaped body and having a first port provided at one end of the rectangular shaped body and a second port provided at a second end of the rectangular shaped body; and
a ring resonator structure having a circular shape, an outer edge of the ring resonator structure being connected to the rectangular shaped body of the microstrip structure;
wherein the ring resonator structure creates an Electromagnetically Induced Transparency (EIT) window within a frequency absorption region of the bandpass filter device to allow a signal to pass at a pre-tuned frequency band.
15. The ring resonator based bandpass filter device of claim 14 wherein the ring resonator structure has a cut positioned to create equal portions of the ring resonator structure thereby providing a Fano resonance with a high-quality factor for the bandpass filter device.
16. The ring resonator based bandpass filter device of claim 14 wherein a partial reflection path is provided in the rectangular shaped body of the microstrip structure to provide a Fano resonance with a high-quality factor for the bandpass filter device.
17. The ring resonator based bandpass filter device of claim 14 wherein a cut is provided in the ring resonator structure.
18. The ring resonator based bandpass filter device of claim 17 wherein the pre-tuned frequency band is determined by a size and location of the cut in the ring resonator structure.
19. The ring resonator based bandpass filter device of claim 17 wherein the pre-tuned frequency band is determined by an angle of the cut in the ring resonator structure.
20. The ring resonator based bandpass filter device of claim 17 wherein a gap distance made by the cut in the ring resonator structure determines the pre-tuned frequency band.