Method for manufacturing semiconductor device
A semiconductor device of an embodiment is manufactured by forming a first layer by applying a liquid containing silicon oxide particles onto a first substrate, performing a first heat treatment, forming a second layer including a first insulator on the upper surface and the side surfaces of the first layer, forming a third layer including an electronic circuit on the second layer, bonding a second substrate including a semiconductor circuit to the third layer, and separating the first substrate and the second substrate at the first layer.
1. A method for manufacturing a semiconductor device, comprising:
forming a first layer by applying a liquid containing silicon oxide particles onto a first substrate;
performing a first heat treatment after the forming the first layer;
forming a second layer including a first insulator on an upper surface and a side surface of the first layer, after the performing the first heat treatment;
forming a third layer including an electronic circuit on the second layer;
bonding a second substrate including a semiconductor circuit to the third layer; and
separating the first substrate and the second substrate, the first substrate integrated with one part of the first layer and the second substrate integrated with another part of the first layer after the separating.
2. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
forming a region in the first layer before the forming the second layer, the region being in contact with at least some of the silicon oxide particles and the first substrate and including a second insulator.
3. The method for manufacturing a semiconductor device according to claim 2 , wherein the second insulator is silicon oxide or silicon nitride.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein a particle size distribution of the silicon oxide particles includes a bimodal distribution.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein
the silicon oxide particles include first silicon oxide particles having a first particle size and second silicon oxide particles having a second particle size,
the liquid includes a first liquid containing the first silicon oxide particles and a second liquid containing the second silicon oxide particles, and
the forming the first layer includes application of the first liquid followed by application of the second liquid.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the first heat treatment is performed in an oxidizing atmosphere.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein a temperature of the first heat treatment is 800° C. or higher.
8. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
performing a treatment in an atmosphere containing an organosilicon compound, after the performing the first heat treatment and before the forming the second layer.
9. The method for manufacturing a semiconductor device according to claim 8 , further comprising:
performing a second heat treatment after the performing the treatment.
10. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
planarizing the second layer after the forming the second layer and before the forming the third layer.
11. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
removing the second layer from the side surface of the first layer, before the separating the first substrate and the second substrate.
12. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
forming a plurality of protrusions on a surface of the first substrate, before the forming the first layer.
13. The method for manufacturing a semiconductor device according to claim 1 , wherein the first substrate includes a silicon oxide film provided on a surface of the first substrate.
14. The method for manufacturing a semiconductor device according to claim 1 , wherein the electronic circuit includes a memory cell array, and the semiconductor circuit controls an operation of the memory cell array.
15. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
removing the one part of the first layer from the first substrate, after the separating the first substrate and the second substrate.
16. The method for manufacturing a semiconductor device according to claim 1 , wherein a median particle size of the silicon oxide particles is equal to or more than 10 nm and equal to or less than 500 nm.
17. The method for manufacturing a semiconductor device according to claim 1 , wherein a thickness of the first layer is equal to or more than 0.5 μm and equal to or less than 5 μm.
18. The method for manufacturing a semiconductor device according to claim 1 , wherein the first insulator is silicon oxide or silicon nitride.
19. The method for manufacturing a semiconductor device according to claim 1 , wherein the first substrate and the second substrate include a silicon substrate.