System and method for cryogenic hybrid technology computing and memory
A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.
1. A memory cell, comprising:
an integrated circuit having a plurality of planarized layers;
a magnetic Josephson junction device, formed of said plurality of caldera planarized and chemical-mechanically polished planarized layers comprising a stacked first superconductor layer, a first ferromagnetic layer, an insulator layer, a second ferromagnetic layer, and a second superconductor;
a readout circuit comprising a superconducting magnetic field responsive device; and
an addressing line which selectively causes an output representing magnetically stored information in the magnetic Josephson junction device to be presented at an output port.
2. The memory cell according to claim 1 , wherein the readout circuit comprises a ballistic single flux quantum device readout.
3. The memory cell according to claim 1 , wherein the readout circuit comprises a superconductor-ferromagnet transistor.
4. The memory cell according to claim 1 , wherein the readout circuit comprises a three-terminal nanowire superconducting device.
5. The memory cell according to claim 1 , further comprising an address decoder implemented using energy-efficient rapid single flux quantum logic.
6. The memory cell according to claim 1 , wherein the readout circuit is formed of planarized layers.
7. The memory cell according to claim 6 , wherein the readout circuit comprises a third superconductor layer, a third ferromagnetic layer, a second insulator layer, a fourth ferromagnetic layer, a fourth superconductor layer, and a third insulator layer, representing a magnetic Josephson junction formed on a superconductor-ferromagnet transistor.
8. The memory cell according to claim 7 , wherein the first superconductor layer, second superconductor layer, third superconductor layer, and fourth superconductor layer each comprise niobium, and the first insulator layer, second insulator layer, and third insulator layer comprise aluminum oxide.
9. The memory cell according to claim 1 , wherein the readout circuit comprises at least one of a palladium-iron alloy and a nickel, iron, molybdenum and manganese alloy.
10. The memory cell according to claim 1 , wherein the readout circuit comprises a cryogenic orthogonal spin transfer device.
11. The memory cell according to claim 1 , wherein the readout circuit comprises a cryogenic spin Hall effect device.
12. The memory cell according to claim 1 , wherein the plurality of planarized layers are planarized using caldera planarization and chemical mechanical polishing.
13. A memory array, comprising:
an integrated circuit having a plurality of planarized layers, planarized using caldera planarization and chemical mechanical polishing;
an array comprising a plurality of magnetic Josephson junction devices formed of said plurality of planarized layers, each magnetic Josephson junction device comprising a stacked first superconductor layer, a first ferromagnetic layer, an insulator layer, a second ferromagnetic layer, and a second superconductor;
a respective readout circuit associated with each magnetic Josephson junction device, comprising a superconducting magnetic field responsive device; and
a set of array element addressing lines which selectively cause an output representing magnetically stored information at least one respective addressed magnetic Josephson junction device to be presented at an output port.
14. The memory array according to claim 13 , wherein each respective readout circuit is selected from the group consisting of a ballistic single flux quantum device readout, a superconductor-ferromagnet transistor, a three-terminal nanowire superconducting device, a cryogenic orthogonal spin transfer device, and a cryogenic spin Hall effect device.
15. The memory array according to claim 13 , wherein each respective readout circuit is formed of planarized layers.
16. The memory array according to claim 13 , further comprising an address decoder implemented using energy-efficient rapid single flux quantum logic.
17. The memory array according to claim 13 , wherein each respective readout circuit comprises a superconductor-ferromagnet transistor.
18. The memory array according to claim 13 , wherein each of the plurality of magnetic Josephson junction devices comprises a clock input, further comprising a superconducting clock distribution circuit.
19. The memory array according to claim 13 , wherein the magnetic Josephson junction and a respective readout circuit are integrated as a magnetic Josephson junction formed on a superconductor-ferromagnet transistor with a common superconducting layer electrode.
20. A method of forming a memory array integrated circuit, comprising:
depositing a first plurality of planarized layers on the integrated circuit, at least one respective planarized layer being a magnetically-responsive material;
depositing a second plurality of planarized layers on the integrated circuit, comprising a stacked first superconductor layer, a first ferromagnetic layer, an insulator layer, a second ferromagnetic layer, and a second superconductor;
patterning the first plurality of planarized layers into a plurality of readout circuits;
patterning the second plurality of planarized layers into a plurality of magnetic Josephson junctions; and
patterning a set of array element addressing lines which selectively cause an output of a respective readout device representing magnetically stored information in an associated magnetic Josephson junction to be presented at an output port.