Variable resistance memory device and method of manufacturing the same

1. A variable resistance memory device comprising:

first conductive lines extending in a first direction;

second conductive lines extending in a second direction and crossing the first conductive lines in a plan view; and

cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view,

wherein each of the cell structures comprises a switching pattern, a variable resistance pattern, and a first electrode provided between the switching pattern and a first conductive line, the first electrode including carbon,

wherein each of the first conductive lines comprises an upper pattern including a metal nitride in an upper portion thereof, and

wherein the upper pattern is in contact with a bottom surface of the first electrode.

2. The variable resistance memory device of claim 1 , wherein a nitrogen concentration of the upper pattern decreases moving from a top surface toward a bottom surface of the upper pattern.

3. The variable resistance memory device of claim 1 , wherein each of the first conductive lines comprises a lower pattern provided under the upper pattern, and

wherein the lower pattern and the upper pattern include the same metal element.

4. The variable resistance memory device of claim 3 , wherein each of the first conductive lines comprises a plurality of upper patterns, and

wherein the upper patterns are spaced apart from each other on the lower pattern.

5. The variable resistance memory device of claim 4 , further comprising:

first filler structures interposed between the first conductive lines and extending in the first direction; and

a second filler structure interposed between the cell structures,

wherein the upper patterns are separated from each other in the first direction with the second filler structure interposed therebetween.

6. The variable resistance memory device of claim 1 , further comprising:

first filler structures interposed between the first conductive lines and extending in the first direction; and

a second filler structure interposed between the cell structures,

wherein the second filler structure includes a first bottom surface being in contact with the first filler structures and a second bottom surface being in contact with the first conductive lines, and the first bottom surface is positioned at a lower level than the second bottom surface.

7. The variable resistance memory device of claim 1 , wherein the upper pattern extends in the first direction and is in contact with a plurality of first electrodes of the cell structures.

8. The variable resistance memory device of claim 7 , wherein the upper pattern includes recess regions between the first electrodes in the plan view.

9. The variable resistance memory device of claim 1 , wherein each of the first conductive lines comprises a lower pattern provided under the upper pattern and including a metal layer, and

wherein a thickness of the upper pattern ranges from about 5% to about 50% of a thickness of the lower pattern.

10. The variable resistance memory device of claim 1 , wherein each of the first conductive lines comprises a lower pattern provided under the upper pattern and including a metal layer,

wherein a thickness of the upper pattern ranges from about 5 Å to about 40 Å, and

wherein a thickness of the lower pattern ranges from about 300 Å to about 500 Å.

11. The variable resistance memory device of claim 1 , wherein a nitrogen concentration of the upper pattern ranges from about 5 at % to about 50 at %.

12. A variable resistance memory device comprising:

first conductive lines extending in a first direction;

second conductive lines extending in a second direction and crossing the first conductive lines in a plan view; and

cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view,

wherein each of the cell structures comprises a switching pattern and a variable resistance pattern,

wherein each of the first conductive lines includes first regions vertically overlapping the cell structures and second regions disposed between the first regions, and

wherein a nitrogen concentration of upper portions of the first regions is higher than that of upper portions of the second regions.

13. The variable resistance memory device of claim 12 , wherein top surfaces of the second regions are lower than top surfaces of the first regions.

14. The variable resistance memory device of claim 12 , wherein a nitrogen concentration of each of the upper portions of the first regions gradually decreases as a distance down from a top surface thereof increases.

15. The variable resistance memory device of claim 12 , further comprising:

first filler structures disposed between the first conductive lines and extending in the first direction,

wherein a nitrogen concentration of each of the first filler structures gradually decreases as a distance down from a top surface thereof increases.

16. The variable resistance memory device of claim 12 , wherein each of the first conductive lines comprises a lower pattern and an upper pattern,

wherein the lower pattern includes a metal layer, and the upper pattern includes a metal nitride layer,

wherein the metal layer and the metal nitride layer include the same metal element.

17. The variable resistance memory device of claim 16 , wherein each of the first conductive lines comprises a plurality of upper patterns, and

wherein the upper patterns are spaced apart from each other in the first direction on the lower pattern.

18. The variable resistance memory device of claim 16 , wherein the upper pattern extends in the first direction and is in contact with a plurality of cell structures.

19. A variable resistance memory device comprising:

first conductive lines extending in a first direction;

second conductive lines extending in a second direction and crossing the first conductive lines in a plan view;

cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view;

first filler structure s interposed between the first conductive lines;

a second filler structure interposed between the cell structures; and

third filler structures interposed between the second conductive lines,

wherein each of the cell structures comprises:

a first electrode;

a switching pattern on the first electrode;

a second electrode on the switching pattern;

a variable resistance pattern on the second electrode; and

a third electrode on the variable resistance pattern,

wherein each of the first conductive lines comprises an upper pattern including a metal nitride in an upper portion thereof, and

wherein the upper pattern is in contact with a bottom surface of the first electrode.

20. The variable resistance memory device of claim 19 , wherein a nitrogen concentration of the upper pattern decreases moving downwards from a top surface toward a bottom surface of the upper pattern.