Device having bipolar junction transistors and finFET transistors on the same substrate

1. A method for producing a semiconductor device, the method comprising:

forming, on a substrate made from a semiconductor substance, at least one bipolar junction (BJ) transistor comprising a first terminal connected to a first well, the first well formed in the substrate and comprising a first dopant having a first dopant concentration;

forming on the substrate at least one non-BJ transistor, comprising a second terminal connected to a second well, the second well formed in the substrate and comprising a second dopant having a same polarity as the first dopant,

wherein the first dopant concentration of the BJ transistor is higher than a second dopant concentration of the non-BJ transistor; and

forming on the substrate at least an additional non-BJ transistor, different from the non-BJ transistor, the additional non-BJ transistor comprising a third terminal directly connected to a third well, the third well formed in the substrate and comprising a third dopant having (i) the same polarity as the first dopant and (ii) a third dopant concentration that is lower than the first dopant concentration.

2. The method according to claim 1 , wherein forming the BJ transistor, the non-BJ transistor and the additional non-BJ transistor comprises: forming (i) the first dopant in the first well and (ii) the second dopant in the second well, using a first mask; and forming: (i) the first dopant in the first well and (ii) the third dopant in the third well, using a second mask.

3. The method according to claim 1 , wherein forming the BJ transistor comprises: (i) implanting the second dopant in the first well, and (ii) implanting the third dopant in the first well.

4. The method according to claim 3 , wherein implanting the second dopant comprises implanting the second dopant in the first well and in the second well at a first time interval, and wherein implanting the third dopant comprises implanting the third dopant in the first well and in the third well at a second time interval, different from the first time interval.

5. The method according to claim 1 , wherein forming the BJ transistor, the non-BJ transistor, and the additional non-BJ transistor comprises forming the first dopant, the second dopant and the third dopant using a same dopant substance.

6. The method according to claim 1 , wherein forming at least one of the BJ transistor, the non-BJ transistor and the additional non-BJ transistor, comprises forming a fin field-effect transistor (finFET) by forming at least a three-dimensional gate over at least one of the first well, the second well and the third well.

7. The method according to claim 1 , wherein forming at least one of the BJ transistor, the non-BJ transistor and the additional non-BJ transistor, comprises forming a planar field-effect transistor (FET) by forming at least a two-dimensional gate over at least one of the first well, the second well and the third well.

8. The method according to claim 1 , wherein forming at least one of the BJ transistor, the non-BJ transistor and the additional non-BJ transistor, comprises forming a gate-all-around (GAA) transistor, by forming at least a 3D-wire gate over at least one of the first well, the second well and the third well.

9. The method according to claim 1 , wherein forming the BJ transistor comprises forming at least: (i) an emitter having an emitter well, (ii) a base having a base well, and (iii) a collector having a collector well, wherein the emitter well and the collector well have a first polarity and the base has a second polarity that is opposite to the first polarity, and comprising forming within the substrate an isolation well for insulating between: (i) the collector well and (ii) the emitter well and base well.

10. A device, comprising:

a semiconductor substrate;

at least one bipolar junction (BJ) transistor, comprising a first terminal connected to a first well, the first well formed in the substrate and comprising a first dopant having a first dopant concentration;

at least one non-BJ transistor, comprising a second terminal connected to a second well, the second well formed in the substrate and comprising a second dopant having a same polarity as the first dopant wherein the first dopant concentration of the BJ transistor is higher than a second dopant concentration of the non-BJ transistor; and

at least an additional non-BJ transistor, different from the non-BJ transistor, the additional non-BJ transistor comprising a third terminal directly connected to a third well, the third well formed in the substrate and comprising a third dopant having (i) the same polarity as the first dopant and (ii) a third dopant concentration that is lower than the first dopant concentration.

11. The device according to claim 10 , wherein the first well comprises the second dopant and the third dopant.

12. The device according to claim 10 , wherein the first dopant, the second dopant and the third dopant comprise a same dopant substance.

13. The device according to claim 10 , wherein the non-BJ transistor comprises one of a core transistor and an input-output (IO) transistor.

14. The device according to claim 10 , wherein the additional non-BJ transistor comprises one of a core transistor and an input-output (IO) transistor.

15. The device according to claim 10 , wherein at least one of the BJ transistor, the non-BJ transistor and the additional non-BJ transistor, comprises a fin field-effect transistor (finFET) having at least a three-dimensional gate formed over at least one of the first well, the second well and the third well.

16. The device according to claim 10 , wherein at least one of the BJ transistor, the non-BJ transistor and the additional non-BJ transistor, comprises a planar field-effect transistor (FET) having at least a two-dimensional gate formed over at least one of the first well, the second well and the third well.

17. The device according to claim 10 , wherein at least one of the BJ transistor, the non-BJ transistor and the additional non-BJ transistor, comprises a gate-all-around (GAA) transistor, having at least a 3D-wire gate formed over at least one of the first well, the second well and the third well.

18. The device according to claim 10 , wherein the BJ transistor comprises at least: (i) an emitter having an emitter well, (ii) a base having a base well, and (iii) a collector having a collector well, wherein the emitter well and the collector well have a first polarity and the base has a second polarity that is opposite to the first polarity, and comprising an isolation well, formed within the substrate for insulating between: (i) the collector well and (ii) the emitter well and base well.

19. A semiconductor device, comprising:

at least one bipolar junction (BJ) transistor, formed by producing on a substrate made from a semiconductor substance, a first well comprising a first dopant having a first dopant concentration, and connecting the first well to a first terminal;

at least one non-BJ transistor, formed by producing on the substrate a second well, comprising a second dopant having a same polarity as the first dopant, and connecting the second well to a second terminal, wherein the first dopant concentration of the BJ transistor is higher than a second dopant concentration of the non-BJ transistor; and

at least an additional non-BJ transistor, different from the non-BJ transistor, the additional non-BJ transistor is formed by producing on the substrate a third well, and directly connecting the third well to a third terminal, the third well comprising a third dopant having (i) the same polarity as the first dopant and (ii) a third dopant concentration that is lower than the first dopant concentration.