IP Library › Granted Patent US 11,545,473
Granted Patent B2
US 11,545,473 · App. 17/207,481 · Granted Jan 3, 2023

Light-emitting device

Inventors: Kyotaro Koike (Tokyo, JP); Ji-Hao Liang (Tokyo, JP); Mitsunori Harada (Tokyo, JP); Shunya Ide (Tokyo, JP); Hiroshi Kotani (Tokyo, JP); Soji Owada (Tokyo, JP); Satoshi Ando (Tokyo, JP)
Assignee: STANLEY ELECTRIC CO., LTD.
H01L25/0753H01L33/505H01L33/54H01L33/60
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Quick Facts
Patent No.
US 11,545,473
App. No.
17/207,481
Granted
Jan 3, 2023
Kind
B2
Abstract

A light-emitting device according to the present invention comprises: a mounting board; a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer, a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer; a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity. The translucent member includes a thin film portion having a constant film thickness between the wavelength conversion member and the resin member in a region between the plurality of light-emitting elements, and the constant film thickness is smaller than a distance between a top surface of the supporting substrate and a lower surface of the wavelength conversion member.

Claims (21)

1. A light-emitting device comprising:

a mounting board;

a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer;

a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer;

a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and

a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity,

wherein:

the translucent member includes a thin film portion having a constant film thickness between the wavelength conversion member and the resin member in a region between the plurality of light-emitting elements, and the constant film thickness is smaller than a distance between a top surface of the supporting substrate and a lower surface of the wavelength conversion member.

2. The light-emitting device according to claim 1 , wherein

the thin film portion has a thickness smaller than a distance between a top surface of the light-emitting element and the lower surface of the wavelength conversion member.

3. The light-emitting device according to claim 1 , wherein

the resin member extends toward the semiconductor structure layer from an end portion of one light-emitting element and covers a part of the top surface of the supporting substrate in the top surface of the supporting substrate, and the end portion faces an adjacent light-emitting element.

4. The light-emitting device according to claim 1 , wherein

in one region opposing the region between the plurality of light-emitting elements in the lower surface of the wavelength conversion member, a surface roughness is large compared with another region.

5. The light-emitting device according to claim 1 , wherein

a plurality of grooves are formed in a region opposing a region between two adjacent light-emitting elements in the lower surface of the wavelength conversion member.

6. The light-emitting device according to claim 5 , wherein

the plurality of grooves are formed to be parallel to a line connecting centers of the two adjacent light-emitting elements.

7. The light-emitting device according to claim 1 , wherein:

in the lower surface of the wavelength conversion member, a surface area ratio is in a range of 105% or more and 150% or less, assuming that the surface area ratio is 100% when the lower surface of the wavelength conversion member is a perfect mirrored surface, and

the surface area ratio is a ratio of an actual surface area of the lower surface to a mirrored surface area of the lower surface expressed as a percentage.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2021
From: KOIKE, KYOTARO; LIANG, JI-HAO; HARADA, MITSUNORI; IDE, SHUNYA; KOTANI, HIROSHI; OWADA, SOJI; ANDO, SATOSHI
To: STANLEY ELECTRIC CO., LTD.
Reel/Frame 055657/0579 →
Priority Claims (1)
JP JP2020-052946 · Mar 24, 2020 · national
Continuity (1)
Related Publication 20210305216A1 · Sep 30, 2021