Magnetoresistive random access memory

1. A semiconductor device, comprising:

a substrate having a magnetic tunneling junction (MTJ) region and a logic region;

a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle and the MTJ comprises:

a bottom electrode;

a fixed layer;

a free layer;

a capping layer;

a top electrode; and

a first metal interconnection on and directly contacting the MTJ, wherein a top view of the first metal interconnection comprises a flat oval overlapping the circle.

2. The semiconductor device of claim 1 , wherein the flat oval comprises:

a first tangent line extending along a first direction; and

a second tangent line extending along the first direction, wherein the first tangent line and the second tangent line are in parallel.

3. The semiconductor device of claim 2 , wherein the flat oval comprises:

a first curve on one side of the circle and connecting the first tangent line and the second tangent line; and

a second curve on another side of the circle and connecting the first tangent line and the second tangent line.

4. The semiconductor device of claim 2 , wherein the flat oval comprises a short axis extending along a second direction and a ratio of the short axis to a diameter of the circle is greater than 0.7 and less than 1.3.

5. The semiconductor device of claim 4 , wherein the first direction is orthogonal to the second direction.

6. The semiconductor device of claim 2 , wherein the flat oval comprises a long axis extending along the first direction and a ratio of the long axis to a diameter of the circle is greater than 2 and less than 3.3.

7. The semiconductor device of claim 1 , further comprising:

a second metal interconnection on the logic region, wherein a top view of the second metal interconnection comprises a quadrilateral.

8. The semiconductor device of claim 7 , wherein the first metal interconnection and the second metal interconnection are on a same level.