Reliable hybrid bonded apparatus
Reliable hybrid bonded apparatuses are provided. An example process cleans nanoparticles from at least the smooth oxide top layer of a surface to be hybrid bonded after the surface has already been activated for the hybrid bonding. Conventionally, such an operation is discouraged. However, the example cleaning processes described herein increase the electrical reliability of microelectronic devices. Extraneous metal nanoparticles can enable undesirable current and signal leakage from finely spaced traces, especially at higher voltages with ultra-fine trace pitches. In the example process, the extraneous nanoparticles may be both physically removed and/or dissolved without detriment to the activated bonding surface.
1. A method, comprising:
preparing a surface for hybrid bonding, the hybrid bonding comprising direct bonding between dielectric materials and direct metal-to-metal bonding between conductive materials;
plasma activating the surface for the hybrid bonding;
after plasma activating the surface, cleaning the surface to remove metal particles disposed at the surface; and
hybrid bonding the surface to another surface.
2. The method of claim 1 , wherein preparing the surface for hybrid bonding comprises:
forming cavities in the surface;
forming a conductive metal in the cavities; and
planarizing the surface to provide a smooth oxide surface and conductive metal recesses.
3. The method of claim 2 , further comprising:
ashing the smooth oxide surface and conductive metal recesses to remove organic traces of a resist material; and
rinsing the surface with a cleaning fluid to remove contaminating particles from the bonding surface.
4. The method of claim 1 , wherein cleaning the surface to remove metal particles comprises physically removing the metal particles.
5. The method of claim 1 , wherein cleaning the surface to remove metal particles comprises dissolving the metal particles.
6. The method of claim 1 , wherein cleaning the surface to remove metal particles disposed at the surface further comprises applying an alkaline solution to remove the metal particles.
7. The method of claim 6 , wherein a concentration or a pH of the alkaline solution is selected to dissolve 1-10 nanometer copper or metal particles in a selected amount of time without degrading the plasma activated surface.
8. The method of claim 6 , further comprising applying a megasonic agitation to the alkaline solution or acidic solution to assist removing the metal particles disposed at the surface.
9. The method of claim 1 , wherein cleaning the surface to remove metal particles disposed at the surface comprises applying a cleaning solution containing at least one agent selected from the group consisting of hydrogen peroxide, tetra methyl ammonium hydroxide, an organic acid, and an inorganic acid.
10. The method of claim 9 , wherein the concentration of the at least one agent is selected to be less than 1% of the cleaning solution by volume.
11. The method of claim 9 , further comprising applying a megasonic agitation to the cleaning solution to assist removing the metal particles disposed at the surface.
12. An apparatus, comprising:
a directly bonded bonding interface; and
less than two extraneous metal nanoparticles on average per square micron of the bonding interface area.
13. A hybrid bonding method for wafer-to-wafer or die-to-wafer or die-to-die or two substrates packaging, comprising:
forming a cavity in a surface of a first substrate to be hybrid bonded;
forming a conductive metal in the cavity;
planarizing the conductive metal to form a bonding surface;
rinsing the bonding surface;
plasma activating the bonding surface;
after plasma activating the bonding surface, cleaning the bonding surface to remove metal nanoparticles; and
hybrid bonding the activated and cleaned bonding surface to a first surface of a second substrate.
14. The hybrid bonding method of claim 13 , further comprising annealing the hybrid bonded bonding surface at an elevated temperature.
15. The hybrid bonding method of claim 13 , further comprising preparing a second surface of the second substrate for hybrid bonding;
activating the second surface of the second substrate;
after activating the second surface of the second wafer, cleaning the second surface of the second substrate to remove nanoparticles; and
hybrid bonding the activated and cleaned second surface of the second substrate to a next surface of a next substrate.
16. The hybrid bonding method of claim 15 , further comprising repeating the method for X bonding surfaces of Y substrates or dies, to make a hybrid bonded stack of substrates or dies Y layers thick.
17. The hybrid bonding method of claim 16 , further comprising performing at least part of the hybrid bonding method in a flip chip bonder.
18. The hybrid bonding method of claim 13 , further comprising ashing the bonding surface after planarizing the bonding surface.
19. The hybrid bonding method of claim 13 , wherein rinsing the bonding surface after planarizing the bonding surfaces comprises rinsing with deionized water.
20. The hybrid bonding method of claim 13 , wherein cleaning the bonding surface to remove metal nanoparticles further comprises applying a cleaning solution containing at least one agent selected from the group consisting of an alkaline developer, hydrogen peroxide, tetra methyl ammonium hydroxide, an organic acid, and an inorganic acid.
21. The hybrid bonding method of claim 20 , wherein a concentration or a pH of the agent is selected to dissolve 1-10 nanometer copper or metal particles in a selected amount of time without degrading the activated surface.