Method for manufacturing semiconductor device and semiconductor substrate
A method for manufacturing a semiconductor device and a semiconductor substrate are provided. A method for manufacturing a semiconductor device includes the steps of forming a bonding layer that bonds a semiconductor thin film to a bonding layer region on a portion of a first substrate with a force weaker than covalent bonding, forming the semiconductor thin film in the bonding layer region and a non-bonding layer region other than the bonding layer region, separating the semiconductor thin film from the first substrate by bonding an organic layer included in a pick-up substrate different from the first substrate to the semiconductor thin film, removing the bonding layer adhered to a peeled surface of the semiconductor thin film separated from the first substrate, and bonding the semiconductor thin film from which the bonding layer has been removed to a second substrate different from the first substrate.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming a bonding layer that bonds a semiconductor thin film to a bonding layer region on a portion of a first substrate with a force weaker than covalent bonding, comprising:
forming the bonding layer in the bonding layer region and a non-bonding layer region other than the bonding layer region; and
removing the bonding layer formed in the non-bonding layer region after forming the bonding layer;
forming the semiconductor thin film in the bonding layer region and the non-bonding layer region;
separating the semiconductor thin film from the first substrate by bonding an organic layer included in a separation substrate different from the first substrate to the semiconductor thin film;
before the separating the semiconductor thin film, removing a portion of the semiconductor thin film;
before the separating the semiconductor thin film, forming a fixing layer extending from the semiconductor thin film to a region where the semiconductor thin film has been removed, comprising:
forming the fixing layer extending from the semiconductor thin film to the non-bonding layer region;
removing the bonding layer adhered to a peeled surface of the semiconductor thin film separated from the first substrate; and
bonding the semiconductor thin film from which the bonding layer has been removed to a second substrate different from the first substrate.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein
the forming the bonding layer includes forming the bonding layer such that an area of the bonding layer region is larger than an area of the non-bonding layer region.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein
the removing the portion of the semiconductor thin film includes removing the semiconductor thin film formed in the non-bonding layer region.
4. The method for manufacturing a semiconductor device according to claim 1 , further comprising, between the forming the semiconductor thin film and the forming the fixing layer, a step of:
dividing the semiconductor thin film into a plurality of islands by forming a groove in the semiconductor thin film formed on the bonding layer, wherein the forming the bonding layer includes removing the bonding layer included in at least a partial region where the groove is formed.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein
the separating the semiconductor thin film includes cutting off the fixing layer by moving the separation substrate away from the first substrate.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein
the forming the bonding layer includes forming the bonding layer where a material containing carbon atoms is exposed.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein
the forming the semiconductor thin film includes forming the semiconductor thin film containing a semiconductor that is selected from any of a nitride semiconductor, a group III-V compound semiconductor, a semiconductor containing Si, and an oxide semiconductor.
8. The method for manufacturing a semiconductor device according to claim 1 , wherein
the forming the bonding layer includes forming the bonding layer having a structure in which layers where carbon atoms are arranged in two dimensions are stacked.
9. A method for manufacturing a semiconductor device comprising the steps of:
forming a bonding layer that bonds a semiconductor thin film to a bonding layer region on a portion of a first substrate with a force weaker than covalent bonding;
forming the semiconductor thin film in the bonding layer region and a non-bonding layer region other than the bonding layer region;
separating the semiconductor thin film from the first substrate by bonding an organic layer included in a separation substrate different from the first substrate to the semiconductor thin film;
before the separating the semiconductor thin film, removing a portion of the semiconductor thin film;
before the separating the semiconductor thin film, forming a fixing layer extending from the semiconductor thin film to a region where the semiconductor thin film has been removed;
between the forming the semiconductor thin film and the forming the fixing layer, dividing the semiconductor thin film into a plurality of islands by forming a groove in the semiconductor thin film formed on the bonding layer, wherein the forming the bonding layer includes removing the bonding layer included in at least a partial region where the groove is formed;
removing the bonding layer adhered to a peeled surface of the semiconductor thin film separated from the first substrate; and
bonding the semiconductor thin film from which the bonding layer has been removed to a second substrate different from the first substrate.