Multiple inputs multiple ouputs RF front-end amplifier circuit, chip and method for configuring signal path

1. An RF front-end amplifier circuit, for amplifying one or more input voltage signals and converting them into one or more output voltage signals, wherein the RF front-end amplifier circuit comprises:

at least two low-noise amplifying modules, wherein each of the low-noise amplifying modules is used to amplify and convert an input voltage signal into one or more intermediate current signals; and

a voltage output module, connected to each of the low-noise amplifying modules and used to combine and convert the intermediate current signal output by each of the low-noise amplifying modules into the one or more output voltage signals,

wherein the intermediate current signal comprises one or more first current signals and one or more second current signals, wherein the low-noise amplifying module comprises:

a first processing unit, which amplifies and converts an input voltage signal input to the low-noise amplifying module into the one or more first current signals; and

a second processing unit, which achieves impedance matching at an input terminal of the low-noise amplifying module, and amplifies one input voltage signal input to the low-noise amplifying module and converts it into the one or more second current signals, wherein the number of the second current signals is the same as the number of the first current signals.

2. The RF front-end amplifier circuit according to claim 1 , wherein the first processing unit comprises:

a first amplifier, which amplifies an input voltage signal input to the low-noise amplifying module to obtain a first voltage signal; and

at least one switchable first transconductor; each of the first transconductor is connected to the first amplifier, and converts the first voltage signal into a first current signal.

3. The RF front-end amplifier circuit according to claim 2 , wherein the first amplifier comprises:

a third transconductor, which converts an input voltage signal input to the low-noise amplifying module into a third current signal; and

a first MOSFET,

wherein a gate and a drain of the first MOSFET are connected, the gate is connected to each of the at least one first transconductor to form at least one current mirror, and the drain is connected to the third transconductor,

wherein the first MOSFET generates the first voltage signal on the gate based on the third current signal.

4. The RF front-end amplifier circuit according to claim 1 , wherein the second processing unit comprises:

a matching amplifying circuit, which achieves impedance matching at the input terminal of the low-noise amplifying module, amplifies an input voltage signal input to the low-noise amplifying module to obtain a second voltage signal, converts the second voltage signal into a feedback signal and feeds it back to the input terminal of the low-noise amplifying module; and

at least one switchable second transconductor, wherein each of the second transconductor is connected to the matching amplifying circuit, and converts the second voltage signal into the one of the second current signals.

5. The RF front-end amplifier circuit according to claim 4 , wherein the matching amplifying circuit comprises:

a second amplifier, which amplifies one input voltage signal input to the low-noise amplifying module to obtain the second voltage signal; and

a feedback circuit, connected to the second amplifier and the input terminal of the low-noise amplifying module, wherein the feedback circuit converts the second voltage signal into the feedback signal and feeds it back to the input terminal of the low-noise amplifying module.

6. The RF front-end amplifier circuit according to claim 1 , wherein the voltage output module comprises:

at least one current combining unit, which combines the first current signal and the second current signal output by at least two low-noise amplifying modules to obtain a fourth current signal; and

at least one current-voltage conversion unit, respectively connected to a corresponding current combining unit, wherein the at least one current-voltage conversion unit converts the fourth current signal into the output voltage signal.

7. The RF front-end amplifier circuit according to claim 1 , wherein

the first current signal and the second current signal are single-ended signals, or

the first current signal and the second current signal are differential signals.

8. A chip, wherein the chip comprises an RF front-end amplifier circuit according to claim 1 .

9. A method for configuring signal path,

wherein the method for configuring signal path is applied in an RF front-end amplifier circuit for amplifying one or more input voltage signals and converting them into one or more output voltage signals,

wherein the RF front-end amplifier circuit comprises at least two low-noise amplifying modules and a voltage output module,

wherein each of the low-noise amplifying modules is used to amplify and convert an input voltage signal into one or more intermediate current signals,

wherein the voltage output module is connected to each of the low-noise amplifying modules and used to combine and convert the intermediate current signal output by each of the low-noise amplifying modules into the one or more output voltage signals,

wherein the method for configuring signal path comprises:

acquiring an input-output correspondence table, wherein the input-output correspondence table describes the correspondence between the input voltage signal and the output voltage signal; and

configuring signal path in the RF front-end amplifier circuit according to the input-output correspondence table.