Backside metal patterning die singulation system and related methods
Implementations of methods of singulating a plurality of die included in a substrate may include forming a plurality of die on a first side of a substrate, forming a backside metal layer on a second side of a substrate, applying a photoresist layer over the backside metal layer, patterning the photoresist layer along a die street of the substrate, and etching through the backside metal layer located in the die street of the substrate. The substrate may be exposed through the etch. The method may also include singulating the plurality of die included in the substrate through removing a substrate material in the die street.
1. A method of singulating a plurality of die comprised in a substrate, the method comprising:
forming a plurality of alignment features in a periphery of a substrate;
forming a plurality of die on a first side of the substrate;
forming a backside metal layer on a second side of the substrate;
thinning the second side of the substrate and forming an edge ring through the thinning;
applying a photoresist layer over the backside metal layer;
aligning the substrate from the second side of the substrate using the plurality of alignment features, wherein the plurality of alignment features are in the edge ring;
patterning the photoresist layer along a die street of the substrate;
etching through the backside metal layer located in the die street of the substrate, wherein the substrate is exposed through the etch; and
singulating the plurality of die comprised in the substrate through removing substrate material in the die street.
2. The method of claim 1 , wherein the substrate is thinned to less than 50 micrometers thick.
3. The method of claim 1 , wherein the substrate is thinned to less than 30 micrometers thick.
4. The method of claim 1 , wherein the backside metal layer is 10 micrometers thick.
5. The method of claim 1 , wherein patterning the photoresist layer further comprises exposing the photoresist layer and developing the photoresist layer.
6. The method of claim 1 , further comprising thinning the edge ring prior to aligning the substrate.
7. The method of claim 1 , wherein removing substrate material in the die street further comprises plasma etching.
8. A method of singulating a plurality of die comprised in a substrate, the method comprising:
forming a plurality of alignment features in a periphery of a substrate;
forming a plurality of die on a first side of the substrate;
forming a seed layer on a second side of the substrate opposite the first side of the substrate;
applying a photoresist layer over the seed layer;
aligning the substrate from the second side of the substrate using the plurality of alignment features;
patterning the photoresist layer;
forming a backside metal layer over the seed layer;
removing the photoresist layer; and
singulating the plurality of die comprised in the substrate through removing substrate material in a die street and through removing the seed layer material in the die street.
9. The method of claim 8 , further comprising thinning the edge ring prior to aligning the substrate.
10. The method of claim 8 , further comprising exposing the photoresist layer with a mask comprising a plurality of parallel slits thereon and rotating the mask 90 degrees and exposing the photoresist layer with the mask.
11. The method of claim 8 , wherein the backside metal layer comprises copper.
12. The method of claim 8 , wherein removing substrate material in the die street further comprises plasma etching.
13. The method of claim 8 , further comprising thinning the second side of the substrate to a thickness less than 30 micrometers.
14. A method of singulating a plurality of die comprised in a substrate, the method comprising:
forming a plurality of die on a first side of a substrate;
forming a seed layer on the second side of a substrate opposite the first side of the substrate;
applying a photoresist layer directly to and over the seed layer;
patterning the photoresist layer;
forming a backside metal layer directly coupled to and over the seed layer;
removing the photoresist layer; and
singulating the plurality of die comprised in the substrate through removing substrate material in a die street and through removing seed layer material in the die street.
15. The method of claim 14 , further comprising forming a plurality of alignment features in the substrate and aligning the substrate from the first side of the substrate.
16. The method of claim 14 , further comprising forming a plurality of alignment features on the photoresist layer and aligning the substrate from the second side of the substrate.
17. The method of claim 14 , further comprising:
forming a plurality of alignment features in a periphery of the substrate;
thinning the substrate and forming an edge ring through the thinning;
thinning the edge ring; and
aligning the substrate from the second side of the substrate through the plurality of alignment features.
18. The method of claim 14 , wherein a mask having a pattern corresponding to all the die streets is used to pattern the photoresist layer.
19. The method of claim 14 , wherein the backside metal layer is 10 micrometers thick.
20. The method of claim 14 , further comprising thinning the second side of the substrate, wherein the substrate is thinned to less than 50 micrometers thick.