Processing of workpieces using fluorocarbon plasma

1. A method for processing a workpiece, the method comprising:

placing a workpiece on a workpiece support in a processing chamber, the workpiece comprising a tungsten layer and a titanium nitride (TiN) layer;

prior to an etch process, performing a breakthrough process on the workpiece to at least partially remove an oxide layer or a polymeric layer on the titanium nitride layer of the workpiece, wherein the breakthrough process comprises exposing the workpiece to hydrogen radicals;

performing the etch process on the titanium nitride layer to at least partially remove the titanium nitride layer of the workpiece at an etch rate that is greater than an etch rate for the tungsten layer during the etch process, wherein the etch process comprises exposing the workpiece to nitrogen species, oxygen species, fluorine species and hydrogen species; and

removing the workpiece from the processing chamber.

2. The method of claim 1 , wherein the etch process is implemented using a remote plasma.

3. The method of claim 2 , wherein the etch process comprises:

admitting a process gas into a plasma chamber;

energizing an induction coil to generate the remote plasma from the process gas;

filtering one or more etch species generated in the remote plasma using a separation grid to create a filtered mixture, the separation grid separating the plasma chamber from the processing chamber; and

exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the titanium nitride layer.

4. The method of claim 3 , wherein the process gas comprises a fluorine containing gas, an oxygen containing gas, a nitrogen containing gas, and a hydrogen containing gas.

5. The method of claim 4 , wherein the fluorine containing gas comprises tetrafluoromethane (CF4), hexafluoroethane (C 2 F 6 ), tetrafluoroethylene (C 2 F 4 ), fluoroform (CHF 3 ), difluoromethane (CH 2 F 2 ), or fluoromethane (CH 3 F).

6. The method of claim 4 , wherein the oxygen containing gas comprises oxygen (O2), carbon monoxide (CO), carbon dioxide (CO 2 ), or nitric oxide (NO).

7. The method of claim 4 , wherein the hydrogen containing gas comprises hydrogen (H 2 ), methane (CH 4 ), or ammonia (NH 3 ).

8. The method of claim 1 , wherein the etch rate of the titanium nitride is greater than about 100 angstroms per minute and less than about 300 angstroms per minute.

9. The method of claim 1 , wherein the etch process is implemented using a direct plasma.

10. The method of claim 9 , wherein the etch process comprises:

admitting a process gas into a processing chamber;

energizing an electrode disposed in the workpiece support to generate a direct plasma from the process gas; and

exposing the workpiece to the direct plasma in the processing chamber to at least partially etch the titanium nitride layer.

11. The method of claim 10 , wherein the process gas comprises a fluorine containing gas, oxygen containing gas, nitrogen containing gas, and a hydrogen containing gas.

12. The method of claim 11 , wherein the fluorine-containing gas comprises tetrafluoromethane (CF4), hexafluoroethane (C 2 F 6 ), tetrafluoroethylene (C 2 F 4 ), fluoroform (CHF 3 ), difluoromethane (CH 2 F 2 ), or fluoromethane (CH 3 F).

13. The method of claim 11 , wherein the oxygen containing gas comprises oxygen (O2), carbon monoxide (CO), carbon dioxide (CO 2 ), or nitric oxide (NO).

14. The method of claim 11 , wherein the hydrogen containing gas comprises hydrogen (H 2 ), methane (CH 4 ), or ammonia (NH 3 ).

15. The method of claim 1 , wherein the breakthrough process comprises:

exposing the workpiece to a hydrogen radical generated using a remote plasma.

16. The method of claim 1 , wherein the breakthrough process comprises:

exposing one or more species generated by a fluorine containing gas using a direct plasma to implement a reactive ion etch on the oxide layer.

17. A method for processing a workpiece, the method comprising:

placing a workpiece on a workpiece support in a processing chamber, the workpiece comprising a tungsten layer and a titanium nitride (TiN) layer;

performing a breakthrough process on the workpiece to at least partially remove an oxide layer on the titanium nitride layer of the workpiece, wherein the breakthrough process comprise exposing the workpiece to hydrogen radicals;

admitting a process gas into a plasma chamber;

energizing an induction coil to generate a remote plasma from the process gas;

filtering one or more etch species generated in the remote plasma using a separation grid to create a filtered mixture, the separation grid separating the plasma chamber from the processing chamber, wherein the one or more etch species comprise nitrogen species, oxygen species, fluorine species, and hydrogen species;

exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the titanium nitride layer at an etch rate that is greater than an etch rate for the tungsten layer; and

removing the workpiece from the processing chamber.

18. The method of claim 17 , wherein the breakthrough process comprises:

admitting a process gas into a plasma chamber, wherein the process gas comprises a hydrogen containing gas;

energizing an induction coil to generate the remote plasma from the process gas;

filtering one or more species generated in the remote plasma using a separation grid to create a filtered mixture comprising hydrogen radicals, the separation grid separating the plasma chamber from the processing chamber; and

exposing the workpiece to the filtered mixture comprising hydrogen radicals in the processing chamber such that the filtered mixture at least partially removes the oxide layer.

19. The method of claim 17 , wherein the breakthrough process comprises:

admitting a process gas into a processing chamber, wherein the process gas comprises a fluorine containing gas;

energizing an electrode disposed in the workpiece support to generate a direct plasma from the process gas; and

exposing the workpiece to the direct plasma in the processing chamber to at least partially remove the oxide layer.