Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors

1. An integrated circuit structure comprising:

a substrate having an upper surface;

a gallium nitride layer disposed on said upper surface of the substrate, wherein said substrate and said gallium nitride layer comprise a wafer; and

a photoconductive semiconductor switch laterally disposed alongside a transistor on said gallium nitride layer integrated into the integrated circuit structure; wherein a regrown gallium nitride material is disposed on said photoconductive semiconductor switch and operatively coupled with said wafer.

2. The integrated circuit structure according to claim 1 , wherein said substrate comprises at least one of a silicon material and a silicon carbide material.

3. The integrated circuit structure according to claim 1 , wherein said transistor comprises a field-effect transistor.

4. The integrated circuit structure according to claim 1 , wherein said photoconductive semiconductor switch comprises a first electrical contact and a second electrical contact disposed on the GaN layer.

5. The integrated circuit structure according to claim 4 , wherein said photoconductive semiconductor switch comprises an aluminum gallium nitride layer disposed on a gallium nitride on silicon wafer; the first electrical contact and second electrical contact are laterally arranged off-mesa on the gallium nitride layer of the wafer, wherein the regrown gallium nitride material is deposited over each of the first electrical contact and the second electrical contact and disposed on the gallium nitride between the first electrical contact and the second electrical contact.

6. The integrated circuit structure according to claim 5 , wherein at least one of the regrown gallium nitride material and the gallium nitride layer forms a photoconductive circuit.

7. The integrated circuit structure according to claim 4 , wherein said photoconductive semiconductor switch comprises an aluminum gallium nitride layer disposed on a gallium nitride on silicon wafer; the first electrical contact and the second electrical contact are on-mesa being disposed on the aluminum gallium nitride layer, wherein an AlGaN—GaN two dimensional electron gas interface is present; a window etched into the AlGaN layer; and the regrown GaN layer deposited in the window.

8. The integrated circuit structure according to claim 7 , wherein said regrown GaN layer is disposed on the exposed gallium nitride layer in the window.

9. The integrated circuit structure according to claim 1 further comprising:

a transparent silicon dioxide dielectric insulation layer configured to insulate each of the first electrical contact and the second electrical contact of the photoconductive semiconductor switch and the transistor.

10. The integrated circuit structure according to claim 1 further comprising:

a light source optically coupled to said photoconductive semiconductor switch.

11. The integrated circuit structure according to claim 1 , wherein said photoconductive semiconductor switch and said transistor are each configured to be utilized separately or interdependently.

12. The integrated circuit structure according to claim 1 , wherein said photoconductive semiconductor switch is homogeneously integrated with said transistor on a gallium nitride on silicon wafer and configured to control said transistor.

13. The integrated circuit structure according to claim 1 , wherein said photoconductive semiconductor switch is homogeneously integrated with said transistor in a gallium nitride on silicon wafer and configured to be controlled by said transistor.

14. The integrated circuit structure according to claim 1 , wherein a dielectric and an interlayer are transparent to a light source utilized to trigger the photoconductive semiconductor switch.