IP Library › Patent Application 17224513
Patent Application
App. No. 17/224,513

METHODS FOR VAPOR DEPOSITION OF GROUP 4 TRANSITION METAL-CONTAINING FILMS USING GROUP 4 TRANSITION METAL-CONTAINING FILMS FORMING COMPOSITIONS

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Patent No.
US None
App. No.
17/224,513
Abstract

Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal azatrane precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Claims (7)

1 . A Group 4 transition metal-containing film forming composition comprising a Group 4 transitional metal-containing azatrane precursor having the following formula:

wherein M is selected from Group 4 transition metals consisting of Ti, Zr, or Hf; R is Cp, alkyl or silyl substituted Cp, amidinate, or DAD; each R 1 is independently H or a C1 to C6 hydrocarbyl group; and each R 2 is independently a C1 to C6 hydrocarbyl group.

2 . The Group 4 transition metal-containing film forming composition of claim 1 , wherein the Group 4 transitional metal-containing azatrane precursor is selected from the group consisting of Cp-Ti((—N(Me)-CH 2 —CH 2 —) 3 N), Cp-Ti((—N(iPr)-CH 2 —CH 2 —) 3 N), Cp-Ti((—N(Me)-CHMe-CH 2 —) 3 N), Cp-Ti((—N(iPr)-CHMe-CH 2 —) 3 N), MeCp-Ti((—N(Me)-CH 2 —CH 2 —) 3 N), MeCp-Ti((—N(iPr)-CH 2 —CH 2 —) 3 N), MeCp-Ti((—N(Me)-CHMe-CH 2 —) 3 N), MeCp-Ti((—N(iPr)-CHMe-CH 2 —) 3 N), EtCp-Ti((—N(Me)-CH 2 —CH 2 —) 3 N), EtCp-Ti((—N(iPr)-CH 2 —CH 2 —) 3 N), EtCp-Ti((N(Me)-CHMe-CH 2 —) 3 N), EtCp-Ti((N(iPr)-CHMe-CH 2 —) 3 N), iPrCp-Ti((—N(Me)-CH 2 —CH 2 —) 3 N), iPrCp-Ti((—N(iPr)-CH 2 —CH 2 —) 3 N), iPrCp-Ti((—N(Me)-CHMe-CH 2 —) 3 N), iPrCp-Ti((—N(iPr)-CHMe-CH 2 —) 3 N), Me 5 Cp-Ti((—N(Me)-CH 2 —CH 2 —) 3 N), Me 5 Cp-Ti((—N(iPr)-CH 2 —CH 2 —) 3 N), Me 5 Cp-Ti((—N(Me)-CHMe-CH 2 —) 3 N), Me 5 Cp-Ti((—N(iPr)-CHMe-CH 2 —) 3 N), Me 3 SiCp-Ti((—N(Me)-CH 2 —CH 2 —) 3 N), Me 3 SiCp-Ti((—N(iPr)-CH 2 —CH 2 —) 3 N), Me 3 SiCp-Ti((—N(Me)-CHMe-CH 2 —) 3 N), Me 3 SiCp-Ti((—N(iPr)-CHMe-CH 2 —) 3 N), N iPr Me-Amd-Ti((—N(Me)-CH 2 —CH 2 —) 3 N), N iPr Me-Amd-Ti((—N(iPr)-CH 2 —CH 2 —) 3 N), N iPr Me-Amd-Ti((—N(iPr)-CHMe-CH 2 —) 3 N, N iPr Me-Amd-Ti((—N(iPr)-CHMe-CH 2 —) 3 N), tBuDAD-Ti((—N(Me)-CH 2 —CH 2 —) 3 N), tBuDAD-Ti((—N(iPr)-CH 2 —CH 2 —) 3 N), tBuDAD-Ti((—N(Me)-CHMe-CH 2 —) 3 N), or tBuDAD-Ti((—N(iPr)-CHMe-CH 2 —) 3 N).

3 . The Group 4 transition metal-containing film forming composition of claim 1 , wherein the Group 4 transitional metal-containing azatrane precursor is selected from the group consisting of, Cp-Zr((—N(Me)-CH 2 —CH 2 —) 3 N), Cp-Zr((—N(iPr)-CH 2 —CH 2 —) 3 N), Cp-Zr((—N(Me)-CHMe-CH 2 —) 3 N), Cp-Zr((—N(iPr)-CHMe-CH 2 —) 3 N), MeCp-Zr((—N(Me)-CH 2 —CH 2 —) 3 N), MeCp-Zr((—N(iPr)-CH 2 —CH 2 —) 3 N), MeCp-Zr((—N(Me)-CHMe-CH 2 —) 3 N), MeCp-Zr((—N(iPr)-CHMe-CH 2 —) 3 N), EtCp-Zr((—N(Me)-CH 2 —CH 2 —) 3 N), EtCp-Zr((—N(iPr)-CH 2 —CH 2 —) 3 N), EtCp-Zr((N(Me)-CHMe-CH 2 —) 3 N), EtCp-Zr((N(iPr)-CHMe-CH 2 —) 3 N), iPrCp-Zr((—N(Me)-CH 2 —CH 2 —) 3 N), iPrCp-Zr((—N(iPr)-CH 2 —CH 2 —) 3 N), iPrCp-Zr((—N(Me)-CHMe-CH 2 —) 3 N), iPrCp-Zr((—N(iPr)-CHMe-CH 2 —) 3 N), Me 5 Cp-Zr((—N(Me)-CH 2 —CH 2 —) 3 N), Me 5 Cp-Zr((—N(iPr)-CH 2 —CH 2 —) 3 N), Me 5 Cp-Zr((—N(Me)-CHMe-CH 2 —) 3 N), Me 5 Cp-Zr((—N(iPr)-CHMe-CH 2 —) 3 N), Me 3 SiCp-Zr((—N(Me)-CH 2 —CH 2 —) 3 N), Me 3 SiCp-Zr((—N(iPr)-CH 2 —CH 2 —) 3 N), Me 3 SiCp-Zr((—N(Me)-CHMe-CH 2 —) 3 N), Me 3 SiCp-Zr((—N(iPr)-CHMe-CH 2 —) 3 N), N iPr Me-Amd-Zr((—N(Me)-CH 2 —CH 2 —) 3 N), N iPr Me-Amd-Zr((—N(iPr)-CH 2 —CH 2 —) 3 N), N iPr Me-Amd-Zr((—N(Me)-CHMe-CH 2 —) 3 N), N iPr Me-Amd-Zr((—N(iPr)-CHMe-CH 2 —) 3 N), tBuDAD-Zr((—N(Me)-CH 2 —CH 2 —) 3 N), tBuDAD-Zr((—N(iPr)-CH 2 —CH 2 —) 3 N), tBuDAD-Zr((—N(Me)-CHMe-CH 2 —) 3 N), or tBuDAD-Zr((—N(iPr)-CHMe-CH 2 —) 3 N).

4 . The Group 4 transition metal-containing film forming composition of claim 1 , wherein the Group 4 transitional metal-containing azatrane precursor is selected from the group consisting of Cp-Hf((—N(Me)-CH 2 —CH 2 —) 3 N), Cp-Hf((—N(iPr)-CH 2 —CH 2 —) 3 N), Cp-Hf((—N(Me)-CHMe-CH 2 —) 3 N), Cp-Hf((—N(iPr)-CHMe-CH 2 —) 3 N), MeCp-Hf((—N(Me)-CH 2 —CH 2 —) 3 N), MeCp-Hf((—N(iPr)-CH 2 —CH 2 —) 3 N), MeCp-Hf((—N(Me)-CHMe-CH 2 —) 3 N), MeCp-Hf((—N(iPr)-CHMe-CH 2 —) 3 N), EtCp-Hf((—N(Me)-CH 2 —CH 2 —) 3 N), EtCp-Hf((—N(iPr)-CH 2 —CH 2 —) 3 N), EtCp-Hf((N(Me)-CHMe-CH 2 —) 3 N), EtCp-Hf((N(iPr)-CHMe-CH 2 -) 3 N), iPrCp-Hf((—N(Me)-CH 2 —CH 2 —) 3 N), iPrCp-Hf((—N(iPr)-CH 2 —CH 2 —) 3 N), iPrCp-Hf((—N(Me)-CHMe-CH 2 —) 3 N), iPrCp-Hf((—N(iPr)-CHMe-CH 2 —) 3 N), Me 5 Cp-Hf((—N(Me)-CH 2 —CH 2 —) 3 N), Me 5 Cp-Hf((—N(iPr)-CH 2 —CH 2 —) 3 N), Me 5 Cp-Hf((—N(Me)-CHMe-CH 2 —) 3 N), Me 5 Cp-Hf((—N(iPr)-CHMe-CH 2 —) 3 N), Me 3 SiCp-Hf((—N(Me)-CH 2 —CH 2 —) 3 N), Me 3 SiCp-Hf((—N(iPr)-CH 2 —CH 2 —) 3 N), Me 3 SiCp-Hf((—N(Me)-CHMe-CH 2 —) 3 N), Me 3 SiCp-Hf((—N(iPr)-CHMe-CH 2 —) 3 N), N iPr Me-Amd-Hf((—N(Me)-CH 2 —CH 2 —) 3 N), N iPr Me-Amd-Hf((—N(iPr)-CH 2 —CH 2 —) 3 N), N iPr Me-Amd-Hf((—N(Me)-CHMe-CH 2 —) 3 N), N iPr Me-Amd-Hf((—N(iPr)-CHMe-CH 2 —) 3 N), tBuDAD-Hf((—N(Me)-CH 2 —CH 2 —) 3 N), tBuDAD-Hf((—N(iPr)-CH 2 —CH 2 —) 3 N), tBuDAD-Hf((—N(Me)-CHMe-CH 2 —) 3 N), or tBuDAD-Hf((—N(iPr)-CHMe-CH 2 —) 3 N).

5 . The Group 4 transition metal-containing film forming composition of claim 1 , wherein R is Cp or alkyl- or silyl-substituted Cp.

6 . The Group 4 transition metal-containing film forming composition of claim 5 , wherein the Group 4 transitional metal-containing azatrane precursor is Me 5 Cp-M((—N(Me)-CH 2 —CH 2 —) 3 N), Me 5 Cp-M((—N(iPr)-CH 2 —CH 2 —) 3 N), Cp-M((—N(Me)-CHMe-CH 2 —) 3 N), or Cp-M((—N(iPr)-CHMe-CH 2 -) 3 N).