Deformable electronic device and method of making a deformable electronic device
A method of making a deformable electronic device comprises forming a multilayer device structure comprising functional layers on a flexible substrate. At least one, some or all of the functional layers comprises a stack of 2D monolayers, and a number or proportion of misaligned interfaces within each stack of 2D monolayers is controlled to obtain a predetermined bending stiffness. Each of the misaligned interfaces comprises a twist angle and/or lattice mismatch between adjacent 2D monolayers. The functional layers may include electronically active layers and other layers having a dielectric, insulating, and/or protective function.
1. A deformable electronic device comprising:
a multilayer device structure comprising:
functional layers on a flexible polymeric substrate, each of the functional layers comprising one or more 2D monolayers, the functional layers including electronically active layers and other layers having a dielectric, insulating and/or protective function; and
a misaligned interface comprising a twist angle between adjacent functional layers,
wherein the other layers include first and second encapsulation layers and a dielectric layer, and
wherein at least one of the other layers comprises a stack of 2D monolayers, and wherein each stack of 2D monolayers includes at least one misaligned interface, the at least one misaligned interface comprising a twist angle and/or lattice mismatch between adjacent 2D monolayers.
2. The deformable electronic device of claim 1 , wherein the twist angle lies in a range from about 0.1° to about 180°.
3. The deformable electronic device of claim 1 , wherein the multilayer device structure includes a plurality of the misaligned interfaces.
4. The deformable electronic device of claim 1 , wherein the one or more 2D monolayers of each of the functional layers comprise one or more 2D materials selected from the group consisting of: graphene, silicene, germanene, phosphorene, a transition metal dichalcogenide, MoS 2 , WS 2 , MoSe 2 , WSe 2 , MoTe 2 , a semiconducting metal dichalcogenide, SnS 2 , SnSe 2 , h-BN, BeO, a transition metal oxide, MnO 2 , ZnO, a transition metal carbide, a transition metal carbonitride, Bi 2 Se 3 , and Sb 2 Te 3 .
5. The deformable electronic device of claim 1 , wherein each stack of 2D monolayers includes at least five misaligned interfaces within the stack, each of the at least five misaligned interfaces comprising a twist angle and/or lattice mismatch between adjacent 2D monolayers.
6. A deformable electronic device comprising:
a multilayer device structure comprising functional layers on a flexible polymeric substrate, the functional layers including electronically active layers and other layers having a dielectric, insulating and/or protective function, at least one of the other layers comprising a stack of 2D monolayers,
wherein each stack of 2D monolayers includes at least five misaligned interfaces within the stack, each of the at least five misaligned interfaces comprising a twist angle and/or lattice mismatch between adjacent 2D monolayers.
7. The deformable electronic device of claim 6 , wherein a proportion or number of misaligned interfaces within each stack is controlled to obtain a predetermined bending stiffness.
8. The deformable electronic device of claim 7 , wherein the proportion is at least about 0.3.
9. The deformable electronic device of claim 8 , wherein the proportion is between 0.5 and 1.0.
10. The deformable electronic device of claim 6 , wherein each of the other layers has a thickness in a range from about 3 nm to about 100 nm.
11. The deformable electronic device of claim 6 , wherein at least one of the other layers further comprises a 3D film, the stack of 2D monolayers being positioned adjacent to or within the 3D film.
12. The deformable electronic device of claim 6 , wherein the electronically active layers include a gate electrode, a channel, a source electrode, and/or a drain electrode, and
wherein the other layers include first and second encapsulation layers and a dielectric layer, the deformable electronic device comprising a field effect transistor.
13. The deformable electronic device of claim 6 , wherein the stack of 2D monolayers comprises one or more 2D materials selected from the group consisting of: graphene, silicene, germanene, phosphorene, a transition metal dichalcogenide, MoS 2 , WS 2 , MoSe 2 , WSe 2 , MoTe 2 , a semiconducting metal dichalcogenide, SnS 2 , SnSe 2 , h-BN, BeO, a transition metal oxide, MnO 2 , ZnO, a transition metal carbide, a transition metal carbonitride, Bi 2 Se 3 , and Sb 2 Te 3 .
14. The deformable electronic device of claim 6 , wherein each of the functional layers comprises one or more 2D monolayers, and
further comprising a misaligned interface comprising a twist angle between adjacent functional layers.
15. The deformable electronic device of claim 6 , wherein the multilayer device structure is crumpled.