Backside gate contact

1. A semiconductor structure, comprising:

first nanostructures;

a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure;

a dielectric fin disposed on the isolation structure and in contact with a sidewall of the first gate structure; and

a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure,

wherein a bottom surface of the first gate structure is in direct contact with the backside gate contact.

2. The semiconductor structure of claim 1 , further comprising:

second nanostructures;

a second gate structure wrapping around each of the second nanostructures and disposed over the isolation structure; and

a frontside gate contact disposed over the second nanostructures and away from the isolation structure,

wherein the second gate structure is electrically coupled to the frontside gate contact.

3. The semiconductor structure of claim 2 , wherein the frontside gate contact is electrically coupled to the second gate structure by way of a gate cap layer.

4. The semiconductor structure of claim 2 , further comprising:

a first source/drain feature coupled to end surfaces of the second nanostructures; and

a backside source/drain contact disposed below the second nanostructures and adjacent to the isolation structure,

wherein the backside source/drain contact is electrically coupled to the first source/drain feature.

5. The semiconductor structure of claim 2 , further comprising:

a second source/drain feature coupled to and sandwiched between the first nanostructures and the second nanostructures; and

a dielectric plug disposed below the second source/drain feature,

wherein the dielectric plug is adjacent the isolation structure and the backside gate contact.

6. The semiconductor structure of claim 5 , further comprising:

a liner extending from between the backside gate contact and the isolation structure to between the backside gate contact and the dielectric plug.

7. The semiconductor structure of claim 6 ,

wherein the dielectric plug and the isolation structure comprise silicon oxide,

wherein the liner comprises silicon nitride.

8. The semiconductor structure of claim 5 , wherein the second nanostructures are disposed over a backside dielectric layer.

9. The semiconductor structure of claim 8 , wherein the backside dielectric layer is spaced apart from the dielectric plug and the isolation structure by a liner.

10. The semiconductor structure of claim 9 ,

wherein the dielectric plug and the backside dielectric layer comprise silicon oxide,

wherein the liner comprises silicon nitride.

11. A semiconductor structure, comprising:

a first plurality of nanostructures;

a first gate structure wrapping around each of the first plurality of nanostructures;

a first cap layer disposed on a top surface of the first gate structure;

a backside gate contact in direct contact with a bottom surface of the first gate structure, the bottom surface being opposite the top surface;

a second plurality of nanostructures;

a second gate structure wrapping around each of the second plurality of nanostructures;

a second cap layer disposed on the second gate structure; and

a frontside gate contact in direct contact with second cap layer.

12. The semiconductor structure of claim 11 , wherein the backside gate contact partially extends into the first gate structure.

13. The semiconductor structure of claim 11 , further comprising:

a first source/drain feature disposed between and in direct contact with the first plurality of nanostructures and the second plurality of nanostructures; and

a second source/drain feature in direct contact with the second plurality of nanostructures,

wherein the second plurality of nanostructures extend between the first source/drain feature and the second source/drain feature.

14. The semiconductor structure of claim 13 , further comprising:

a dielectric plug disposed below the first source/drain feature; and

a backside source/drain contact disposed below the second source/drain feature.

15. The semiconductor structure of claim 14 ,

wherein the dielectric plug is spaced apart from the backside gate contact by a liner,

wherein the dielectric plug comprises silicon oxide,

wherein the liner comprises silicon nitride.

16. The semiconductor structure of claim 14 , wherein the backside source/drain contact partially extends into the second source/drain feature.

17. A method, comprising:

receiving a workpiece comprising:

first nanostructures disposed over a first mesa structure,

second nanostructure disposed over a second mesa structure,

a first gate structure wrapping around the first nanostructures;

a second gate structure wrapping around the second nanostructures,

a first source/drain feature sandwiched between the first nanostructures and the second nanostructures,

a second source/drain feature spaced apart from the first source/drain feature by the second nanostructures,

a first dummy epitaxial plug below the first source/drain feature and between the first mesa structure and the second mesa structure, and

a second dummy epitaxial plug below the second source/drain feature and adjacent the second mesa structure;

replacing the second dummy epitaxial plug with a backside source/drain contact;

replacing the first mesa structure with a backside dielectric feature;

replacing the first dummy epitaxial plug with a dielectric plug; and

replacing the backside dielectric feature with a backside gate contact in direct contact with the first gate structure.

18. The method of claim 17 ,

wherein the first mesa structure and the second mesa structure comprise silicon,

wherein the first dummy epitaxial plug and the second dummy epitaxial plug comprise silicon germanium.

19. The method of claim 17 , wherein the replacing of the first mesa structure comprises:

selectively removing the first mesa structure;

depositing a liner over the workpiece; and

after the depositing of the liner, forming the backside dielectric feature over the liner.

20. The method of claim 19 , wherein the replacing the backside dielectric feature comprises:

selectively removing the backside dielectric feature;

after the selectively removing of the backside dielectric feature, anisotropically etching the liner to form a backside gate contact opening to expose the first gate structure; and

forming the backside gate contact in the backside gate contact opening.