Methods and apparatus to implement current limit test mode
Methods, apparatus, systems and articles of manufacture are disclosed. An example apparatus includes a gate controller coupled between an input terminal and an intermediate node, the gate controller including a first transistor coupled between the input terminal and a first node; a second transistor coupled between the first node and the intermediate node; a third transistor coupled between the input terminal and the intermediate node; and a charge pump coupled to the intermediate node; a switching network coupled between the intermediate node and an output terminal, the switching network including a high-side drive (HSD) transistor having a HSD gate terminal coupled to the intermediate node, the HSD transistor coupled between an input voltage and a switch node.
1. An apparatus comprising:
a switching network that includes a first high-side drive (HSD) transistor having a first HSD gate and a second HSD transistor having a second HSD gate, wherein the switching network has a current limit test mode, a normal mode and a one hundred percent mode; and
a gate controller having first and second switches and a third transistor, wherein the third transistor is coupled between the second HSD transistor and the second switch, the first and second switches are configured to connect the first HSD gate to the second HSD gate during at least one of the normal mode or the one hundred percent mode, and the gate controller is configured to turn on the second HSD transistor while the first HSD transistor is off during the current limit test mode.
2. The apparatus of claim 1 , wherein the gate controller is configured to refresh a voltage applied to a gate terminal of the first HSD transistor responsive to the switching network operating in the one hundred percent mode.
3. The apparatus of claim 1 , wherein the first HSD gate is disconnected from the second HSD gate responsive to the switching network being in the current limit test mode.
4. A system comprising:
a first transistor having first and second current terminals and a first control terminal;
a second transistor having third and fourth current terminals and a second control terminal, wherein the second control terminal is coupled to the first control terminal, and the third current terminal is coupled to the second current terminal;
a charge pump coupled between an input terminal and the fourth current terminal; and
a switching network coupled to the fourth current terminal, wherein the switching network includes a first high-side drive (HSD) transistor and a second HSD transistor, and the switching network has at least three modes of operation that include a current limit test mode.
5. The system of claim 4 , wherein the at least three modes include a normal mode and a one hundred percent mode.
6. The system of claim 5 , wherein the charge pump is configured to refresh a voltage applied to a gate terminal of the first HSD transistor while the switching network is operating in the one hundred percent mode.
7. The system of claim 4 , wherein the first and second transistors are p-channel transistors.
8. The system of claim 4 , further comprising a gate driver coupled to the switching network.