Increased resonant frequency alkali-doped Y-phase hexagonal ferrites
Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material, such as Y-phase hexagonal ferrite material, and methods of manufacturing. In some embodiments, sodium or potassium can be added into the crystal structure of the hexagonal ferrite material in order to achieve improved resonant frequencies in the range of 500 MHz to 1 GHz useful for radiofrequency applications.
1. A method for increasing the resonant frequency of a hexagonal ferrite material, the method comprising:
doping a Y phase hexagonal ferrite material including strontium, cobalt, iron, and oxygen with a univalent alkali metal on a strontium site; and
charge compensating on a cobalt site of the hexagonal ferrite material.
2. The method of claim 1 wherein the hexagonal ferrite material is doped with silicon, aluminum, manganese, or any combination of the three.
3. The method of claim 1 wherein the hexagonal ferrite material is doped with silicon acting as a grain growth inhibitor.
4. The method of claim 1 wherein the hexagonal ferrite material is doped with manganese, preventing reduction of the iron in the composition to Fe 3+ .
5. The method of claim 1 wherein scandium is used for charge compensating.
6. The method of claim 1 wherein indium is used for charge compensating.
7. The method of claim 1 wherein the hexagonal ferrite material has a loss factor of less than about 6 at a frequency of 1 GHz.
8. A hexagonal ferrite material having enhanced resonant frequency comprising:
a Y phase hexagonal ferrite material including strontium, cobalt, iron, and oxygen, the hexagonal ferrite material being doped with a univalent alkali metal on a strontium site, and the hexagonal ferrite material charge compensated with scandium or indium.
9. The hexagonal ferrite material of claim 8 wherein the hexagonal ferrite material is doped with silicon, aluminum, manganese, or any combination of the three.
10. The hexagonal ferrite material of claim 8 wherein the hexagonal ferrite material is doped with silicon acting as a grain growth inhibitor.
11. The hexagonal ferrite material of claim 8 wherein the hexagonal ferrite material is doped with manganese preventing reduction of the iron in the composition to Fe 3+ .
12. The hexagonal ferrite material of claim 8 wherein scandium is used for charge compensating.
13. The hexagonal ferrite material of claim 8 wherein indium is used for charge compensating.
14. The hexagonal ferrite material of claim 8 wherein the hexagonal ferrite material has a loss factor of less than about 6 at a frequency of 1 GHz.
15. A radiofrequency device comprising:
a Y phase hexagonal ferrite material including strontium, cobalt, iron, and oxygen, the hexagonal ferrite material being doped with a univalent alkali metal on a strontium site and doped for charge compensation on a cobalt site.
16. The radiofrequency device of claim 15 wherein the hexagonal ferrite material is doped with silicon, aluminum, manganese, or any combination of the three.
17. The radiofrequency device of claim 15 wherein scandium is used for charge compensating.
18. The radiofrequency device of claim 15 wherein indium is used for charge compensating.
19. The radiofrequency device of claim 15 wherein the hexagonal ferrite material has a loss factor of less than about 6 at a frequency of 1 GHz.
20. The radiofrequency device of claim 15 wherein the device is an antenna.