Method of forming an enhanced unexposed photoresist layer
The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.
1. A system for forming an enhanced unexposed photoresist layer with an increased sensitivity to exposure radiation, the system comprising:
a reactor comprising a first reaction chamber, a substrate holder, and a gas distribution system;
a temperature control system; and
a pressure control system,
wherein the system is configured to:
receive a substrate with the unexposed photoresist layer in the first reaction chamber; and,
provide a first precursor comprising at least a portion of a photosensitizer sensitive to exposure radiation to the substrate in the first reaction chamber and retain the first precursor within in the first reaction chamber for a soaking period thereby infiltrating the unexposed photoresist layer on the substrate with the first precursor for a first period T 1 .
2. The system of claim 1 , further comprising a gas precursor delivery system.
3. The system of claim 2 , wherein the gas precursor delivery system comprises first precursor source, a second precursor source, and a purge gas source.
4. The system of claim 1 , wherein the reactor comprises a direct plasma apparatus.
5. The system of claim 1 , wherein the reactor comprises a remote plasma apparatus.
6. The system of claim 1 , wherein the substrate holder receives a single substrate.
7. The system of claim 1 , wherein the substrate holder receives 2 to 25 substrates.
8. The system of claim 1 , wherein the substrate holder receives 26 to 200 substrates.
9. The system of claim 1 , further comprising a second reaction chamber.
10. The system of claim 9 , further comprising a common precursor removal system fluidly coupled to the first reaction chamber and the second reaction chamber.
11. The system of claim 9 , further comprising a common precursor delivery system fluidly coupled to the first reaction chamber and the second reaction chamber.
12. The system of claim 9 , further comprising a common purge system fluidly coupled to the first reaction chamber and the second reaction chamber.
13. The system of claim 1 , wherein the temperature control system is configured to control surfaces in the reactor chamber to a temperature between 50° C. and 150° C.
14. The system of claim 1 , wherein the system is further configured to first infiltrate the unexposed photoresist layer material and then anneal the infiltrated unexposed photoresist layer material.
15. The system of claim 1 , wherein the system is further configured to:
before providing the first precursor:
purge the first reaction chamber for a period of 120 to 1200 seconds; and
heat the first reaction chamber to a temperature between 5° and 150° C.
16. The system of claim 15 , wherein the system is further configured to:
cool the substrate by at least 25° C. prior to the step of providing the first precursor.
17. The system of claim 16 , wherein the system is further configured to anneal the infiltrated unexposed photoresist layer material.
18. The system of claim 3 , wherein the first precursor source comprises magnesium and/or calcium.