Semiconductor device having self-aligned interconnect structure and method of making
A semiconductor device includes a substrate and a first transistor on a first side of the substrate. The semiconductor device further includes a first electrode contacting a first region of the first transistor. The semiconductor device further includes a spacer extending along a sidewall of the first transistor. The semiconductor device further includes a self-aligned interconnect structure (SIS) separated from at least a portion of the first electrode by the spacer, wherein the SIS extends through the substrate. The semiconductor device further includes a second electrode contacting a surface of the first electrode farthest from the substrate, wherein the second electrode directly contacts the SIS.
1. A semiconductor device, comprising:
a substrate;
a first transistor on a first side of the substrate;
a first electrode contacting a first region of the first transistor;
a spacer extending along a sidewall of the first transistor;
a self-aligned interconnect structure (SIS) separated from at least a portion of the first electrode by the spacer, wherein the SIS extends through the substrate; and
a second electrode contacting a surface of the first electrode farthest from the substrate, wherein the second electrode directly contacts the SIS.
2. The semiconductor device of claim 1 , wherein the SIS has a uniform thickness along an entirety of the SIS.
3. The semiconductor device of claim 1 , wherein the SIS has a tapered profile.
4. The semiconductor device of claim 1 , further comprising:
a second transistor on a second side of the substrate opposite the first side of the substrate, wherein the spacer extends along a sidewall of the second transistor.
5. The semiconductor device of claim 4 , wherein the spacer separates the SIS from an entirety of the sidewall of the second transistor.
6. The semiconductor device of claim 4 , further comprising a third electrode over a surface of the second transistor farthest from the substrate.
7. The semiconductor device of claim 6 , wherein the spacer separates the SIS from the third electrode.
8. The semiconductor device of claim 4 , further comprising a via extending through the substrate, wherein the via electrically connects a gate electrode of the first transistor to a gate electrode of the second transistor.
9. The semiconductor device of claim 1 , further comprising an interconnect structure on a second side of the substrate opposite to the first side of the substrate, wherein the SIS electrically connects to a conductive element in the interconnect structure.
10. A semiconductor device, comprising:
a substrate;
a first transistor on a first side of the substrate;
a first interconnect structure on the first side of the substrate, wherein the first transistor is between the first interconnect structure and the substrate;
a second interconnect structure on a second side of the substrate opposite to the first side of the substrate; and
a self-aligned interconnect structure (SIS) extending through the substrate, wherein the SIS is directly connected to the first interconnect structure, and the SIS is directly connected to the second interconnect structure.
11. The semiconductor device of claim 10 , wherein the SIS is separated from the first transistor.
12. The semiconductor device of claim 10 , further comprising a second transistor between the second interconnect structure and the substrate.
13. The semiconductor device of claim 12 , further comprising a via extending through the substrate, wherein the via electrically connects a gate electrode of the first transistor to a gate electrode of the second transistor, and the via is separated from the SIS.
14. A semiconductor device, comprising:
a substrate;
a first transistor on a first side of the substrate;
a first electrode contacting a first region of the first transistor;
a spacer extending along a sidewall of the first transistor;
a first interconnect structure on the first side of the substrate;
a second interconnect structure on a second side of the substrate opposite to the first side of the substrate; and
a self-aligned interconnect structure (SIS) extending through the substrate, wherein the SIS is directly connected to the first interconnect structure, the SIS is directly connected to the second interconnect structure, and the SIS is separated from at least a portion of the first electrode by the spacer.
15. The semiconductor device of claim 14 , wherein the first transistor is between the first interconnect structure and the substrate.
16. The semiconductor 21 , further comprising a second transistor on the second side of the substrate.
17. The semiconductor device of claim 16 , wherein the SIS is electrically connected to the second transistor through the second interconnect structure.
18. The semiconductor device of claim 14 , further comprising a third transistor on the first side of the substrate, wherein the third transistor is spaced from the first transistor in a direction parallel to a top surface of the substrate.
19. The semiconductor device of claim 18 , wherein the third transistor is electrically connected to the first interconnect structure.
20. The semiconductor device of claim 18 , wherein the SIS is between the first transistor and the third transistor.