Systems and methods for dynamic biasing of microwave amplifier
A system for adjusting bias power provided to a radio-frequency amplifier to increase plurality of figures of merit based on sensed characteristics of the amplifier and/or characteristics of the input or output power.
1. An amplifying system comprising:
a radio-frequency (RF) amplifier, the RF amplifier configured to receive an incoming RF signal having an input power through an input port and output an outgoing RF signal through an output port, the outgoing RF signal having an output power, the RF amplifier comprising a field-effect transistor (FET) that includes a gate terminal, a drain terminal and a source terminal; and
a power management system configured to sense a current at the drain terminal of the FET or a temperature of the RF amplifier and adjust a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current or temperature,
wherein for a given output power, the power management system is configured to provide an amount of bias voltage at the gate terminal that reduces third order intermodulation distortions (IMD3).
2. The amplifying system of claim 1 , wherein the power management system is configured to optimize another figures of merit of the RF amplifier selected from the group consisting of efficiency of the RF amplifier, gain of the RF amplifier, and output power of the RF amplifier.
3. The amplifying system of claim 1 , wherein the third order intermodulation distortions (IMD3) is reduced by an amount less than or equal to about 150 dB.
4. The amplifying system of claim 1 , wherein a drain efficiency obtained at the amount of gate bias voltage that reduces third order intermodulation distortions (IMD3) is lower than a maximum drain efficiency for the given output power.
5. A phased array system comprising:
a plurality of amplifying systems of claim 1 arranged in a first array; and
a plurality of antennas arranged in a second array, each of the plurality of antennas arranged in the second array being coupled to the output port of a corresponding one of the amplifying system in the first array.
6. The phased array system of claim 5 , configured as a radar system.
7. An amplifying module comprising:
a radio-frequency (RF) amplifier configured to receive an incoming RF signal having an input power through an input port and output an outgoing RF signal through an output port, the outgoing RF signal having an output power, the RF amplifier configured to be operated in a saturation mode in which the output power is approximately equal to saturation power of the RF amplifier and in a non-saturation mode in which the output power is less than the saturation power of the RF amplifier, wherein the RF amplifier comprises a field effect transistor (FET) comprising a gate terminal, a drain terminal and a source terminal; and
a power management system configured to:
select an operating mode of the RF amplifier in response to an input received from a user or a controller external to the amplifying module, the operating mode being selected from a saturation mode and a non-saturation mode; and
adjust an amount of bias power provided to the RF amplifier to operate the RF amplifier in the selected operating mode,
wherein adjusting the amount of bias power provided to the RF amplifier comprises sensing a current at the drain terminal of the FET or a temperature of the RF amplifier and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current or temperature.
8. The amplifying module of claim 7 , wherein the power management system is configured to select the operating mode of the RF amplifier and adjust the amount of bias power to operate the RF amplifier in the selected operating mode in real-time.
9. An amplifying module comprising:
a radio-frequency (RF) amplifier configured to receive an incoming RF signal having an input power through an input port and output an outgoing RF signal through an output port, the outgoing RF signal having an output power, wherein the RF amplifier comprises a field effect transistor (FET) comprising a gate terminal, a drain terminal and a source terminal; and
a power management system configured to:
select an operating class of the RF amplifier in response to an input received from a user or a controller external to the amplifying module; and
adjust an amount of bias power provided to the RF amplifier to operate the RF amplifier in the selected operating class,
wherein adjusting the amount of bias power provided to the RF amplifier comprises sensing a current at the drain terminal of the FET or a temperature of the RF amplifier and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current or temperature.
10. The amplifying module of claim 9 , wherein the power management system is configured to select the operating class of the RF amplifier and adjust the amount of bias power to operate the RF amplifier in the selected operating class in real-time.
11. The amplifying module of claim 9 , wherein the operating class of the RF amplifier is selected from the group consisting of class A, class B, class AB, class C, class D, class E, Class F, class G, class H, class S, and Class T.
12. The amplifying system of claim 1 , wherein the power management system is further configured to adjust a frequency of the incoming RF signal.
13. The amplifying module of claim 7 , wherein the amount of bias power optimizes at least two figures of merit of the RF amplifier selected from the group consisting of linearity of the RF amplifier, efficiency of the RF amplifier, gain of the RF amplifier, and output power of the RF amplifier.
14. The amplifying module of claim 9 , wherein the amount of bias power optimizes at least two figures of merit of the RF amplifier selected from the group consisting of linearity of the RF amplifier, efficiency of the RF amplifier, gain of the RF amplifier, and output power of the RF amplifier.
15. The amplifying module of claim 7 , wherein the power management system is further configured to adjust a frequency of the incoming RF signal.
16. The amplifying module of claim 9 , wherein the power management system is further configured to adjust a frequency of the incoming RF signal.
17. The phased array system of claim 5 configured as a communications system.
18. The phased array system of claim 5 configured as an electronic counter measures system.
19. The amplifying module of claim 7 , wherein adjusting the amount of bias power provided to the RF amplifier comprises sensing a current at the drain terminal of the FET and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current.
20. The amplifying module of claim 7 , adjusting the amount of bias power provided to the RF amplifier comprises sensing a temperature of the RF amplifier and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed temperature.
21. The amplifying module of claim 9 , wherein adjusting the amount of bias power provided to the RF amplifier comprises sensing a current at the drain terminal of the FET and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current.
22. The amplifying module of claim 9 , adjusting the amount of bias power provided to the RF amplifier comprises sensing a temperature of the RF amplifier and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed temperature.
23. The amplifying system of claim 1 , wherein the power management system is further configured to adjust a pulse width of the incoming RF signal.
24. The amplifying system of claim 1 , wherein the power management system is further configured to adjust a duty cycle of the incoming RF signal.
25. The amplifying system of claim 1 , wherein the power management system is further configured to adjust a power level of the incoming RF signal.
26. The amplifying system of claim 1 , wherein the power management system is configured to sense a current at the drain terminal of the FET and adjust a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current.
27. The amplifying system of claim 1 , wherein the power management system is configured to sense a temperature of the RF amplifier and adjust a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed temperature.
28. The amplifying module of claim 7 , wherein the power management system is further configured to adjust a pulse width of the incoming RF signal.
29. The amplifying module of claim 7 , wherein the power management system is further configured to adjust a duty cycle of the incoming RF signal.
30. The amplifying module of claim 7 , wherein the power management system is further configured to adjust a power level of the incoming RF signal.
31. The amplifying module of claim 9 , wherein the power management system is further configured to adjust a pulse width of the incoming RF signal.
32. The amplifying module of claim 9 , wherein the power management system is further configured to adjust a duty cycle of the incoming RF signal.
33. The amplifying module of claim 9 , wherein the power management system is further configured to adjust a power level of the incoming RF signal.