DRAM, memory controller and associated training method
A training method for a memory system is provided. The memory system includes a memory controller and a memory. The memory controller is connected with the memory. The training method includes the following steps. Firstly, the memory samples n command/address signals according to a first signal edge and a second signal edge of a clock signal to acquire a first sampled content and a second sampled content. The memory selectively outputting one of the first sampled content and the second sampled content through m data signals to the memory controller in response to a control signal. Moreover, m is larger than n and smaller than 2n.
1. A memory controller generating plural signals to a memory, wherein the memory controller outputs a clock signal and command/address signals to the memory and receives a first sampled content or a second sampled content through a plurality of data signals from the memory in response to a control signal,
wherein the memory controller is configured to program a specified bit of a mode register of the memory using the control signal,
wherein the specified bit is a phase select bit and the mode register further includes a command bus training mode bit.
2. The memory controller as claimed in claim 1 , wherein the memory controller includes n pins to transmit the command/address signals and m pins to transmit the plurality of data signals, m is larger than n, and m is smaller than 2n.
3. The memory controller as claimed in claim 1 , wherein the memory is configured to output the first sampled content when the control signal is in a first state, and configured to output the second sampled content when the control signal is in a second state.
4. The memory controller as claimed in claim 1 , wherein the memory controller is configured to transmit the control signal to the memory.
5. The memory controller as claimed in claim 1 , wherein a data signal of the plurality of data signals is the control signal.
6. The memory controller as claimed in claim 1 , wherein the first sampled content is sampled in response to a first edge of the clock signal of a first type and the second sampled content is sampled in response to a second edge of the clock signal of a second type.
7. The memory controller as claimed in claim 6 , wherein the first type is a rising edge and the second type is a falling edge.
8. The memory controller as claimed in claim 7 , wherein the rising edge of the clock signal and the falling edge of the clock signal are consecutive edges of the clock signal.
9. The memory controller as claimed in claim 1 , wherein the memory is a DRAM and the memory controller is configured to control the DRAM.
10. The memory controller of claim 1 , wherein the memory controller receives the first sampled content and the second sampled content through different data signals of the plurality of data signals.
11. The memory controller of claim 10 , wherein the memory controller is configured to receive the first sampled content and the second sampled content simultaneously.
12. The memory controller as claimed in claim 11 , wherein the first sampled content is sampled in response to a first edge of the clock signal of a first type and the second sampled content is sampled in response to a second edge of the clock signal of a second type.
13. The memory controller as claimed in claim 12 , wherein the first type is a rising edge and the second type is a falling edge.
14. The memory controller as claimed in claim 13 , wherein the rising edge of the clock signal and the falling edge of the clock signal are consecutive edges of the clock signal.
15. The memory controller of claim 1 , wherein the memory controller receives the first sampled content and the second sampled content through the same data signals of the plurality of data signals.
16. The memory controller of claim 15 , wherein the memory controller is configured to receive the first sampled content and the second sampled content sequentially.
17. The memory controller as claimed in claim 16 , wherein the first sampled content is sampled in response to a first edge of the clock signal of a first type and the second sampled content is sampled in response to a second edge of the clock signal of a second type.
18. The memory controller as claimed in claim 17 , wherein the first type is a rising edge and the second type is a falling edge.
19. The memory controller as claimed in claim 18 , wherein the rising edge of the clock signal and the falling edge of the clock signal are consecutive edges of the clock signal.