Method for fabricating semiconductor devices
A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).
1. A method for fabricating a semiconductor device, the method comprising:
providing a substrate comprising a cell region and a core/peripheral region around the cell region;
forming a gate insulating film on the core/peripheral region of the substrate;
forming a first conductive film of a first conductive type on the gate insulating film;
forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction;
after forming the diffusion blocking film, forming an impurity pattern comprising impurities within the first conductive film;
diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type different from the first conductive type; and
forming a metal gate electrode on the second conductive film,
wherein the diffusion blocking film comprises helium (He) and/or argon (Ar).
2. The method for fabricating the semiconductor device of claim 1 , further comprising:
before forming the first conductive film, nitriding a part of the gate insulating film through a nitrogen plasma treatment process.
3. The method for fabricating the semiconductor device of claim 2 , wherein the nitrogen plasma treatment process comprises a post-nitridation annealing (PNA) process.
4. The method for fabricating the semiconductor device of claim 3 , wherein the post-nitridation annealing process comprises a rapid thermal anneal (RTA) process, a millisecond anneal process, a flash anneal process, and/or a laser anneal process.
5. The method for fabricating the semiconductor device of claim 3 , wherein the post-nitridation annealing process is performed at 900° C. or higher and 1200° C. or lower.
6. The method for fabricating the semiconductor device of claim 1 , wherein the diffusion blocking film is formed using a plasma doping process.
7. The method for fabricating the semiconductor device of claim 6 , wherein the plasma doping process uses a dose of 10 14 or more and 10 17 or less.
8. The method for fabricating the semiconductor device of claim 6 , wherein the plasma doping process uses an implantation energy of 0 kV or more and 10 kV or less.
9. The method for fabricating the semiconductor device of claim 1 , wherein the diffusion blocking film is formed using a beamline ion implantation process.
10. The method for fabricating the semiconductor device of claim 1 , wherein the diffusion blocking film is doped with helium (He).
11. A method for fabricating a semiconductor device, the method comprising:
providing a substrate comprising a cell region and a core/peripheral region around the cell region, wherein the core/peripheral region comprises a first region and a second region;
forming a first gate insulating film on the first region;
forming a second gate insulating film on the second region;
forming a first conductive film on the first gate insulating film;
forming a second conductive film having a first conductive type on the second gate insulating film;
forming a mask film on the first conductive film on the first region;
forming a diffusion blocking film within the second conductive film on the second region, the diffusion blocking film being spaced apart from the second gate insulating film in a vertical direction;
after forming the diffusion blocking film, forming an impurity pattern comprising impurities within the second conductive film on the second region;
diffusing the impurities through a heat treatment process to form a third conductive film of a second conductive type different from the first conductive type on the second region;
removing the mask film;
forming a first metal gate electrode on the first conductive film on the first region; and
forming a second metal gate electrode on the third conductive film on the second region,
wherein the diffusion blocking film comprises helium (He) and/or argon (Ar).
12. The method for fabricating the semiconductor device of claim 11 , further comprising:
before forming the second conductive film, nitriding a part of the second gate insulating film through a nitrogen plasma treatment process.
13. The method for fabricating the semiconductor device of claim 12 , wherein the nitrogen plasma treatment process comprises a post-nitridation annealing (PNA) process.
14. The method for fabricating the semiconductor device of claim 13 , wherein the post-nitridation annealing process comprises a rapid thermal anneal (RTA) process, a millisecond anneal process, a flash anneal process, and/or a laser anneal process.
15. The method for fabricating the semiconductor device of claim 13 , wherein the post-nitridation annealing process is performed at 900° C. or higher and 1200° C. or lower.
16. The method for fabricating the semiconductor device of claim 11 , wherein the diffusion blocking film is formed using a plasma doping process.
17. The method for fabricating the semiconductor device of claim 16 , wherein the plasma doping process uses a dose of 10 14 or more and 10 17 or less.
18. The method for fabricating the semiconductor device of claim 16 , wherein the plasma doping process uses an implantation energy of 0 kV or more and 10 kV or less.
19. The method for fabricating the semiconductor device of claim 11 , wherein the diffusion blocking film is formed using a beamline ion implantation process.
20. A method for fabricating a semiconductor device, the method comprising:
providing a substrate comprising a cell region and a core/peripheral region around the cell region;
forming a gate insulating film on the core/peripheral region;
nitriding a part of the gate insulating film;
forming a first conductive film of a first conductive type on the gate insulating film;
forming a second conductive film on the cell region;
forming a mask film on the second conductive film;
forming a diffusion blocking film within the first conductive film on the core/peripheral region, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction;
after forming the diffusion blocking film, forming an impurity pattern comprising impurities within the first conductive film on the core/peripheral region;
diffusing the impurities through a heat treatment process to form a third conductive film of a second conductive type different from the first conductive type on the core/peripheral region;
removing the mask film;
forming a first metal gate electrode on the third conductive film on the core/peripheral region; and
forming a second metal gate electrode on the second conductive film on the cell region,
wherein the diffusion blocking film comprises helium (He) and/or argon (Ar).