FAN-OUT WAFER LEVEL PACKAGING OF SEMICONDUCTOR DEVICES

1 . A semiconductor device assembly, comprising:

a semiconductor die having a back side and a front side, the back side being coupled with a base, the front side including active circuitry;

a first resin encapsulation layer disposed on a first portion of the front side of the semiconductor die, the first resin encapsulation layer being patterned to define a first opening exposing a second portion of the front side of the semiconductor die through the first resin encapsulation layer;

a signal distribution structure:

disposed on the first resin encapsulation layer; and

electrically coupled with the front side of the semiconductor die through the first opening; and

a second resin encapsulation layer disposed on a first portion of the signal distribution structure, the second resin encapsulation layer being patterned to define a second opening that exposes a second portion of the signal distribution structure.

2 . The semiconductor device assembly of claim 1 , wherein:

the first resin encapsulation layer includes a first solder resist layer; and

the second resin encapsulation layer includes a second solder resist layer.

3 . The semiconductor device assembly of claim 2 , wherein the first resin encapsulation layer further includes a dispensed resin layer,

the dispensed resin layer being disposed between the base and the first solder resist layer.

4 . The semiconductor device assembly of claim 1 , wherein:

the first resin encapsulation layer includes a printed resin layer; and

the second resin encapsulation layer includes a solder resist layer.

5 . The semiconductor device assembly of claim 1 , wherein the semiconductor die is a first semiconductor die, the semiconductor device assembly further comprising:

a second semiconductor die disposed on the base, the signal distribution structure electrically coupling the active circuitry of the first semiconductor die with active circuitry included in the second semiconductor die.

6 . The semiconductor device assembly of claim 1 , wherein the base includes at least one of silicon, glass, ceramic, plastic, metal or tape.

7 . The semiconductor device assembly of claim 1 , wherein the base includes molding compound, the semiconductor die being disposed in a recess defined in the molding compound.

8 . The semiconductor device assembly of claim 7 , wherein the base further includes silicon, the molding compound being disposed on the silicon.

9 . The semiconductor device assembly of claim 1 , further comprising a solder ball disposed in the second opening, the solder ball being electrically coupled with the signal distribution structure.

10 . The semiconductor device assembly of claim 9 , the solder ball being a first solder ball, the semiconductor device assembly further comprising a second solder ball that is disposed in a third opening that exposes a third portion of the signal distribution structure, the second solder ball being electrically coupled with the signal distribution structure.

11 . The semiconductor device assembly of claim 1 , wherein the first resin encapsulation layer encapsulates a plurality of edges surfaces of the semiconductor die, the plurality of edge surfaces being disposed between the back side of the semiconductor die and the front side of the semiconductor die.

12 . A semiconductor device assembly, comprising:

a semiconductor die having a back side, a front side and a plurality of edge surfaces extending between the back side and the front side, the back side being coupled with a base including silicon, the front side including active circuitry;

a first resin encapsulation layer disposed on the base, the plurality of edge surfaces, and the front side of the front side of the semiconductor die, the first resin encapsulation layer being patterned to define a first opening that exposes a portion of the front side of the semiconductor die through the first resin encapsulation layer;

a signal distribution structure:

disposed on the first resin encapsulation layer; and

disposed in the first opening, such that the signal distribution structure is electrically coupled with the front side of the semiconductor die through the first opening;

a second resin encapsulation layer disposed on the signal distribution structure, the second resin encapsulation layer being patterned to define a second opening that exposes a portion of the signal distribution structure; and

a solder ball disposed in the second opening, the solder ball being electrically coupled with the signal distribution structure.

13 . The semiconductor device assembly of claim 12 , wherein the semiconductor die is coupled with the base using at least one of:

an adhesive;

a tape; or

a die attach film.

14 . The semiconductor device assembly of claim 12 , wherein:

the first resin encapsulation layer includes a first solder resist layer; and

the second resin encapsulation layer includes a second solder resist layer.

15 . The semiconductor device assembly of claim 14 , wherein the first resin encapsulation layer further includes a dispensed resin layer,

the dispensed resin layer being disposed between the base and the first solder resist layer.

16 . The semiconductor device assembly of claim 12 , wherein:

the first resin encapsulation layer includes a printed resin layer; and

the second resin encapsulation layer includes a solder resist layer.

17 . A method of producing a semiconductor device assembly, the method comprising:

coupling a semiconductor die with a base, the semiconductor die having a back side and a front side, the back side being coupled with the base, the front side including active circuitry;

forming a first resin encapsulation layer on, at least, a first portion of the front side of the semiconductor die, the first resin encapsulation layer being patterned to define a first opening that exposes a second portion of the front side of the semiconductor die through the first resin encapsulation layer;

forming a signal distribution structure on the first resin encapsulation layer, and in the first opening, such that the signal distribution structure is electrically coupled with the front side of the semiconductor die; and

forming a second resin encapsulation layer on, at least, a first portion of the signal distribution structure, the second resin encapsulation layer being patterned to define a second opening that exposes a second portion of the signal distribution structure.

18 . The method of claim 17 , wherein the semiconductor die is a first semiconductor die, the method further comprising:

coupling a second semiconductor die with the base, the signal distribution structure electrically coupling the active circuitry of the first semiconductor die with active circuitry included in the second semiconductor die.

19 . The method of claim 17 , wherein:

forming the first resin encapsulation layer includes forming a first solder resist layer; and

forming the second resin encapsulation layer includes forming a second solder resist layer.

20 . The method of claim 17 , wherein:

forming the first resin encapsulation layer includes forming a printed resin layer; and

forming the second resin encapsulation layer includes forming a solder resist layer.