Light-receiving element and distance-measuring module
The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.
1. A light-receiving element, comprising:
an on-chip lens;
a wiring layer; and
a semiconductor layer between the on-chip lens and the wiring layer, wherein
the semiconductor layer includes:
a first voltage application portion to which a first voltage is applied;
a second voltage application portion to which a second voltage different from the first voltage is applied;
a first charge detection portion arranged around the first voltage application portion; and
a second charge detection portion around the second voltage application portion, and
the wiring layer includes two ground lines in one pixel column in a specific layer, wherein
the two ground lines are symmetrically arranged, and
at least one ground line of the two ground lines has a wider line width than a power supply line.
2. The light-receiving element according to claim 1 , wherein
the wiring layer further includes at least one layer that has a reflective member, and
the reflective member overlaps with the first charge detection portion and the second charge detection portion in a plan view.
3. The light-receiving element according to claim 1 , wherein
the wiring layer further includes at least one layer that has a light-shielding member, and
the light-shielding member overlaps with the first charge detection portion and the second charge detection portion in a plan view.
4. The light-receiving element according to claim 1 , further comprising
a vertical signal line configured to transmit a signal detected in the first charge detection portion or the second charge detection portion, wherein
both sides of the vertical signal line are ground lines having a same line width.
5. The light-receiving element according to claim 4 , wherein
one pixel column has four vertical signal lines, and
signals of two rows are simultaneously transmitted.
6. The light-receiving element according to claim 1 , wherein
the at least one ground line has a plurality of gaps inside.
7. The light-receiving element according to claim 6 , wherein
the plurality of gaps is regularly arrayed in a vertical direction.
8. The light-receiving element according to claim 1 , further comprising wherein
a switching transistor, a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor in a vertical direction in order from a side close to an intermediate line with reference to the intermediate line of the first voltage application portion and the second voltage application portion.
9. The light-receiving element according to claim 1 , wherein
at least one of the power supply line or the at least one ground line includes a horizontal wire that extends in a horizontal direction in a first wiring layer and a vertical wire that extends in a vertical direction in a second wiring layer, and
the horizontal wire and the vertical wire are wired to form a grid in a plan view in a pixel array unit.
10. The light-receiving element according to claim 1 , wherein
the first voltage application portion and the second voltage application portion are respectively configured by a first P-type semiconductor region and a second P-type semiconductor region in the semiconductor layer.
11. The light-receiving element according to claim 1 , wherein
the first voltage application portion and the second voltage application portion are respectively configured by a first transfer transistor and a second transfer transistor in the semiconductor layer.
12. A distance-measuring module, comprising:
a light-receiving element including:
an on-chip lens;
a wiring layer; and
a semiconductor layer between the on-chip lens and the wiring layer, wherein
the semiconductor layer includes:
a first voltage application portion to which a first voltage is applied;
a second voltage application portion to which a second voltage different from the first voltage is applied;
a first charge detection portion around the first voltage application portion; and
a second charge detection portion around the second voltage application portion, and
the wiring layer includes two ground lines in one pixel column in a specific layer, wherein
the two ground lines are symmetrically arranged, and
at least one ground line of the two ground lines has a wider line width than a power supply line;
a light source configured to radiate irradiation light in which brightness periodically varies; and
a light-emission control unit configured to control irradiation timing of the irradiation light.
13. A light-receiving element, comprising:
an on-chip lens;
a wiring layer; and
a semiconductor layer between the on-chip lens and the wiring layer, wherein
the semiconductor layer includes:
a first voltage application portion to which a first voltage is applied;
a second voltage application portion to which a second voltage different from the first voltage is applied;
a first charge detection portion around the first voltage application portion; and
a second charge detection portion around the second voltage application portion,
the wiring layer includes at least one ground line that has a wider line width than a power supply line, and
both sides of a vertical signal line are ground lines having a same line width, wherein the vertical signal line is configured to transmit a signal detected in the first charge detection portion or the second charge detection portion.