Light emitting device comprising perovskite charge transport layer and manufacturing method thereof

1. A light emitting device comprising:

an anode and a cathode;

a light emitting layer disposed between the anode and the cathode;

a first charge transport layer disposed between the anode and the light emitting layer, and functioning as a hole injection layer or a hole transport layer; and

a second charge transport layer disposed between the light emitting layer and the cathode, and functioning as an electron injection layer or an electron transport layer,

wherein the first charge transport layer or the second charge transport layer adjacent to the light emitting layer is a perovskite thin film,

wherein the perovskite thin film is used as the second charge transport layer, an energy level of conduction band maximum (CBM) of the perovskite thin film is higher than an energy level of lowest unoccupied molecular orbital (LUMO) of the light emitting layer, and

wherein a perovskite of the perovskite thin film has structure of ABX 3 , A 2 BX 4 , ABX 4 or A n−1 Pb n I 3n+1 (n is an integer between 2 and 6), wherein A is an organic ammonium ion, an organic amidinium ions, organic phosphonium ions, alkali metal ions, Pb, Mn, Cu, Ga, Ge, In, Al, Sb, Bi, Po, Sn, Ni, Co, Fe, Cr, Pd, Cd, Ca, Sr, a combination or derivatives thereof, B is a transition metal, alkaline earth metal, organic material, inorganic material, ammonium, their derivatives, or a combination thereof, and X is a halogen ion or a combination of different halogen ions.

2. The light emitting device of claim 1 , wherein the perovskite thin film of the first charge transport layer and the perovskite thin film of the second charge transport layer are the same or different from each other.

3. The light emitting device of claim 1 , wherein A is CH(NH 2 ) 2 , C x H 2x+1 (CNH 3 ), (CH 3 NH 3 ) n , ((C x H 2x+1 ) n NH 3 ) n (CH 3 NH 3 ) n , R(NH 2 ) 2 (R=alkyl), (C 2 H 2n+1 NH 3 ) n , CF 3 NH 3 , (CF 3 NH 3 ) n , ((C x F 2x+1 ) n NH 3 ) n (CF 3 NH 3 ) n , ((C x F 2x+1 )NH 3 ) n , (C n F 2n+1 NH 3 ) n (n and x are integers from 1 to 100), Na, K, Rb, Cs, Fr, a combination or derivative thereof,

and

the X is Cl, Br, I, or a combination thereof.

4. The light emitting device of claim 1 , wherein a crystal size in the perovskite thin film is 1 nm to 5 μm.

5. The light emitting device of claim 1 , wherein a thickness of the perovskite thin film is 10 nm to 5 μm.

6. The light emitting device of claim 1 , wherein the perovskite thin film is formed by direct crystallization using co-depositing or sequentially depositing AX compound and BX 2 compound, which are perovskite precursors, from different crucibles respectively.

7. The light emitting device of claim 1 , wherein the perovskite thin film is used as the first charge transport layer, the energy level of valence band maximum (VBM) of the perovskite thin film is lower than the energy level of highest occupied molecular orbital (HOMO) of the light emitting layer.

8. A method of manufacturing light emitting device of claim 1 comprising:

forming the anode on substrate;

forming the first charge transport layer as the hole injection layer or the hole transport layer on the anode;

forming the light emitting layer on the first charge transport layer;

forming the second charge transport layer as the electron injection layer or the electron transport layer on the light emitting layer; and

forming the cathode on the second charge transport layer,

wherein the forming the first charge transport layer or the forming the second charge transport layer is a step of forming the perovskite thin film by using a deposition method,

wherein the perovskite thin film is used as the second charge transport layer, an energy level of conduction band maximum (CBM) of the perovskite thin film is higher than an energy level of lowest unoccupied molecular orbital (LUMO) of the light emitting layer, and

wherein a perovskite of the perovskite thin film has structure of ABX 3 , A 2 BX 4 , ABX 4 or A n−1 Pb n I 3n+1 (n is an integer between 2 and 6), wherein A is an organic ammonium ion, an organic amidinium ions, organic phosphonium ions, alkali metal ions, Pb, Mn, Cu, Ga, Ge, In, Al, Sb, Bi, Po, Sn, Ni, Co, Fe, Cr, Pd, Cd, Ca, Sr, a combination or derivatives thereof, B is a transition metal, alkaline earth metal, organic material, inorganic material, ammonium, their derivatives, or a combination thereof, and X is a halogen ion or a combination of different halogen ions.

9. The method of manufacturing light emitting device of claim 8 , wherein the deposition method is selected from group consisting of vacuum deposition, thermal deposition, flash deposition, laser deposition, chemical vapor deposition, atomic layer deposition, physical vapor deposition, physical-chemical co-evaporation deposition, sequential vapor deposition and solution process-assisted thermal deposition.

10. A method of manufacturing light emitting device of claim 1 comprising:

forming the cathode on substrate;

forming the second charge transport layer as the electron injection layer or the electron transport layer on the cathode;

forming the light emitting layer on the second charge transport layer;

forming the first charge transport layer as the hole injection layer or the hole transport layer on the light emitting layer; and

forming the anode on the first charge transport layer,

wherein the forming the first charge transport layer or the forming the second charge transport layer is a step of forming the perovskite thin film by using a deposition method,

wherein the perovskite thin film is used as the second charge transport layer, an energy level of conduction band maximum (CBM) of the perovskite thin film is higher than an energy level of lowest unoccupied molecular orbital (LUMO) of the light emitting layer,

wherein a perovskite of the perovskite thin film has structure of ABX 3 , A 2 BX 4 , ABX 4 or A n−1 Pb n I 3n+1 (n is an integer between 2 and 6), wherein A is an organic ammonium ion, an organic amidinium ions, organic phosphonium ions, alkali metal ions, Pb, Mn, Cu, Ga, Ge, In, Al, Sb, Bi, Po, Sn, Ni, Co, Fe, Cr, Pd, Cd, Ca, Sr, a combination or derivatives thereof, B is a transition metal, alkaline earth metal, organic material, inorganic material, ammonium, their derivatives, or a combination thereof, and X is a halogen ion or a combination of different halogen ions.