IP Library › Granted Patent US 12,140,715
Granted Patent B2
US 12,140,715 · App. 17/252,595 · Granted Nov 12, 2024

Radiation detector and method for manufacturing radiation detector

Inventors: Keiji Abe (Hamamatsu, JP); Toshiyuki Izawa (Hamamatsu, JP); Kenji Makino (Hamamatsu, JP); Seiichiro Mizuno (Hamamatsu, JP); Takumi Ikenoue (Kyoto, JP); Yuki Haruta (Kyoto, JP); Masao Miyake (Kyoto, JP); Tetsuji Hirato (Kyoto, JP)
Assignees: Kyoto University; HAMAMATSU PHOTONICS K.K.
G01T1/24G01N23/04G01N23/083H01G9/0036H01G9/2009H10K30/30H10K30/81H10K39/36H10K71/15H10K85/30G01N2223/04G01N2223/401G01N2223/50
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Quick Facts
Patent No.
US 12,140,715
App. No.
17/252,595
Granted
Nov 12, 2024
Kind
B2
Abstract

A radiation detector includes a substrate including a first electrode portion, a radiation absorption layer disposed on one side with respect to the substrate and configured of a plurality of perovskite crystals, and a second electrode portion disposed on the one side with respect to the radiation absorption layer and being opposite to the first electrode portion with the radiation absorption layer interposed therebetween. Each of the plurality of perovskite crystals is formed to extend with a first direction in which the first electrode portion and the second electrode portion are opposite to each other as a longitudinal direction in a region between the first electrode portion and the second electrode portion in the radiation absorption layer.

Claims (30)

1. A radiation detector comprising:

a substrate including a first electrode portion;

a radiation absorption layer disposed on one side with respect to the substrate and configured of a plurality of perovskite crystals; and

a second electrode portion disposed on the one side with respect to the radiation absorption layer and being opposite to the first electrode portion with the radiation absorption layer interposed therebetween,

wherein each of the plurality of perovskite crystals is formed to extend with a first direction in which the first electrode portion and the second electrode portion are opposite to each other as a longitudinal direction in a region between the first electrode portion and the second electrode portion in the radiation absorption layer,

in the region between the first electrode portion and the second electrode portion, a length in the first direction of at least one of the plurality of perovskite crystals is 2 or more when a width of the perovskite crystal in a second direction perpendicular to the first direction is 1,

at least one of the first electrode portion and the second electrode portion is configured by a plurality of electrodes, and

a width of the perovskite crystal in the second direction is equal to or smaller than an arrangement pitch of the plurality of electrodes in the region between the first electrode portion and the second electrode portion.

2. The radiation detector according to claim 1 , wherein a length of the perovskite crystal in the first direction is 10 μm or more in the region between the first electrode portion and the second electrode portion.

3. The radiation detector according to claim 1 , wherein an existence rate of the perovskite crystals is 80% or more in the region between the first electrode portion and the second electrode portion.

4. The radiation detector according to claim 1 , wherein the perovskite crystal is in contact with at least another perovskite crystal in the region between the first electrode portion and the second electrode portion.

5. The radiation detector according to claim 1 , wherein a length of the perovskite crystal in the first direction is smaller than a thickness of the radiation absorption layer in the first direction in the region between the first electrode portion and the second electrode portion.

6. The radiation detector according to claim 1 , wherein a thickness of the radiation absorption layer in the first direction is 100 μm or more in the region between the first electrode portion and the second electrode portion.

7. A method for manufacturing a radiation detector, comprising:

a first step of generating mist from a solution containing a perovskite material;

a second step of mixing the mist with a carrier gas;

a third step of spraying the carrier gas containing the mist to a substrate including a first electrode portion in a state in which the substrate is heated, forming a plurality of perovskite crystals to extend with a thickness direction of the substrate as a longitudinal direction in a region corresponding to the first electrode portion in a region on the substrate, and forming a radiation absorption layer configured of the plurality of perovskite crystals on one side with respect to the substrate; and

a fourth step of forming a second electrode portion on the one side with respect to the radiation absorption layer, the second electrode portion being opposite to the first electrode portion with the region corresponding to the first electrode portion interposed therebetween, and

in the region corresponding to the first electrode portion, a length in the thickness direction of at least one of the plurality of perovskite crystals is 2 or more when a width of the perovskite crystals in a direction perpendicular to the thickness direction is 1,

at least one of the first electrode portion and the second electrode portion is configured by a plurality of electrodes, and

a width of the perovskite crystal in the second direction is equal to or smaller than an arrangement pitch of the plurality of electrodes in the region between the first electrode portion and the second electrode portion.

8. The method for manufacturing a radiation detector according to claim 7 , wherein the first step includes generating the mist from the solution through ultrasonic vibration.

9. The method for manufacturing a radiation detector according to claim 7 , wherein the second step includes mixing a dilution gas with the carrier gas.

10. The method for manufacturing a radiation detector according to claim 7 , wherein the third step includes heating the substrate to a temperature of 110° C. or higher and 170° C. or lower.

11. The method for manufacturing a radiation detector according to claim 10 , wherein the third step includes heating the substrate to a temperature of 130° C. or higher and 170° C. or lower.

12. The method for manufacturing a radiation detector according to claim 7 , wherein the second step includes supplying the carrier gas at a flow rate of 0.25 L/min or more and less than 0.45 L/min.

13. The method for manufacturing a radiation detector according to claim 12 , wherein the second step includes supplying the carrier gas at a flow rate of 0.30 L/min or more and less than 0.45 L/min.

14. The method for manufacturing a radiation detector according to claim 7 , wherein the first step includes dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:0 or more and 10 or less to generate the solution containing the perovskite material.

15. The method for manufacturing a radiation detector according to claim 14 , wherein the first step includes dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:0 or more and 5 or less to generate the solution containing the perovskite material.

16. The method for manufacturing a radiation detector according to claim 7 , wherein the third step includes heating the substrate with a temperature of a boiling point of the solvent+20° C. as an upper limit value.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2020
From: ABE, KEIJI; IZAWA, TOSHIYUKI; MAKINO, KENJI; MIZUNO, SEIICHIRO; IKENOUE, TAKUMI; HARUTA, YUKI; MIYAKE, MASAO; HIRATO, TETSUJI
To: KYOTO UNIVERSITY; HAMAMATSU PHOTONICS K.K.
Reel/Frame 054656/0840 →
Priority Claims (1)
JP 2018-120931 · Jun 26, 2018 · national
Continuity (1)
Related Publication 20210255341A1 · Aug 19, 2021