Low noise and high-performance field effect transistors of 2-dimensional materials and methods to fabricate the same
A semiconductor device and methods of fabricating and using the same are provided. The semiconductor device comprises a channel region and at least a first, second, and third electrode. The channel region includes a compound having a transition metal and a chalcogen. The thickness of the channel region is about 3 to about 40 atomic layers.
1. A semiconductor device comprising:
a channel region including a compound having a transition metal and a chalcogen;
at least a first and second electrode in contact with the channel region, the first and second electrodes comprising scandium;
a resistive layer in contact with the channel region; and
a third electrode in contact with the resistive layer,
wherein the channel region has a thickness of about 3 to about 40 atomic layers.
2. The semiconductor device of claim 1 , wherein the transition metal of the channel region comprises molybdenum.
3. The semiconductor device of claim 1 , wherein the chalcogen of the channel region comprises selenium or sulfur.
4. The semiconductor device of claim 1 , the channel region having a first surface and a second opposed surface, wherein the first and second electrodes overlie at least a portion of the first surface of the channel region, and the resistive layer is in contact with the second surface of the channel region.
5. The semiconductor device of claim 4 , wherein the third electrode comprises doped silicon.
6. The semiconductor device of claim 5 , wherein the resistive layer comprises silicon.
7. The semiconductor device of claim 6 , wherein the resistive layer comprises silicon dioxide.
8. The semiconductor device of claim 1 , wherein when a biasing voltage of from 50 to 500 mV is applied between the first electrode and the second electrode and a gate voltage is applied between the third electrode and the second electrode an on-current is generated, when the biasing voltage is applied between the first electrode and the second electrode and no gate voltage is applied an off-current is generated, wherein the ratio of the on-current to the off-current is at least 75,000.
9. The semiconductor device of claim 8 , wherein the biasing voltage is about 150 to about 250 mV.
10. The semiconductor device of claim 1 , wherein the channel region has a thickness of about 8 to about 20 atomic layers.
11. The semiconductor device of claim 1 , wherein the channel region has a thickness that is less than 15 nm.
12. The semiconductor device of claim 1 , wherein the semiconductor device is a transistor or a Schottky-barrier field-effect transistor.
13. The semiconductor device of claim 1 , wherein the semiconductor device has a Hooge constant that is less than 0.01.
14. A semiconductor device comprising:
a channel region having a first surface and a second opposed surface and comprising a compound having a transition metal and a chalcogen, the chalcogen comprising a material selected from the group consisting of: selenium and sulfur;
a first electrode and a second electrode in contact with the first surface of the channel region, the first and second electrodes comprising scandium;
a resistive layer in contact with the second surface of the channel region;
a third electrode in contact with the resistive layer; and
wherein the channel region has a thickness of about 3 to about 40 atomic layers.
15. The semiconductor device of claim 14 , wherein when a biasing voltage of from 50 to 500 mV is applied between the first electrode and the second electrode and a gate voltage is applied between the third electrode and the second electrode an on-current is generated, when the biasing voltage is applied between the first electrode and the second electrode and no gate voltage is applied an off-current is generated, wherein the ratio of the on-current to the off-current is at least 75,000.
16. The semiconductor device of claim 15 , wherein the biasing voltage is about 150 to 250 mV.
17. The semiconductor device of claim 14 , wherein the semiconductor device has a Hooge constant that is less than 0.01.
18. A method of providing a conductive path, the method comprising:
providing a semiconductor device comprising—
a channel region having a first surface and a second opposed surface and comprising a compound having a transition metal and a chalcogen,
a first electrode and a second electrode in contact with the first surface of the channel region, the first and second electrodes comprising scandium;
a resistive layer positioned below the second surface of the channel region,
a third electrode in contact with the resistive layer, and
wherein the channel region has a thickness of about 8 to about 20 atomic layers;
applying a biasing voltage of about 50 to about 500 mV between the first electrode and the second electrode; and
applying a gate voltage between the third electrode and the second electrode.
19. The method of claim 18 , wherein the third electrode comprises doped silicon, wherein the resistive layer is in direct contact with the second side of the channel region, and wherein the resistive layer comprises silicon dioxide.