Multilayer varistor having a field-optimized microstructure
In an embodiment a multilayer varistor includes a ceramic body made from a varistor material, wherein the ceramic body includes a plurality of inner electrodes, first regions and second regions, wherein the varistor material in the first regions has a first average grain size D A , wherein the varistor material in the second regions has a second average grain size D B , and wherein D A <D B .
1. A multilayer varistor comprising:
a ceramic body made from a varistor material,
wherein the ceramic body comprises a plurality of inner electrodes, first regions and second regions,
wherein the first regions are arranged in active zones of the varistor, and the second regions are arranged in inactive zones of the varistor,
wherein the varistor material in the first regions has a first average grain size D A ,
wherein the varistor material in the second regions has a second average grain size D B , and
wherein D A <D B .
2. The multilayer varistor according to claim 1 , wherein the first regions have an average grain size D A <3 μm and the second regions have an average grain size D B >3 μm.
3. The multilayer varistor according to claim 1 , wherein the first regions have an average grain size D A <0.9 μm and the second regions have an average grain size D B >0.9 μm.
4. The multilayer varistor according to claim 1 , wherein each region comprises at least one partial layer or an areal region of a partial layer of the ceramic body.
5. The multilayer varistor according to claim 1 ,
wherein the active zones are formed in the regions around ends of differently contacted first and second inner electrodes, and
wherein the second regions are formed in the further active zones and the inactive zones.
6. The multilayer varistor according to claim 5 , wherein a plurality of varistors in the ceramic body are in serial interconnection with one another.
7. The multilayer varistor according to claim 1 ,
wherein ends of the differently contacted first and second inner electrodes of the multilayer varistor each frontally face each another, and
wherein the first regions are formed in the active zone between the differently contacted first and second inner electrodes, and the second regions are formed in the inactive zones.
8. A module comprising:
a plurality of combined multilayer varistors according to claim 1 ,
wherein a volume region containing inner electrodes comprises the first regions and volume regions containing no inner electrodes comprise the second regions.
9. A module comprising:
a plurality of combined multilayer varistors according to claim 1 ,
wherein the ceramic body has internal contacts and external contacts configured to be connected to further components,
wherein a volume region contains inner electrodes and volume regions bordering the external contacts comprises the first regions, and
wherein volume regions containing no inner electrodes and do not border the external contacts comprise the second regions.
10. The module according to claim 9 , wherein the first regions have an average grain size D A <3 μm and the second regions have an average grain size D B >3 μm.
11. The module according to claim 9 , wherein the first regions have an average grain size D A <0.9 μm and the second regions have an average grain size D B >0.9 μm.
12. A module comprising:
a plurality of combined multilayer varistors comprising a ceramic main body made from a varistor material,
wherein the ceramic body comprises a plurality of inner electrodes, first regions and second regions,
wherein the varistor material in the first regions has a first average grain size D A ,
wherein the varistor material in the second regions has a second average grain size D B ,
wherein D A <D B ,
wherein the ceramic body has internal contacts and external contacts configured to be connected to further components,
wherein a volume region contains inner electrodes and volume regions bordering the external contacts comprises the first regions, and
wherein volume regions containing no inner electrodes and do not border the external contacts comprise the second regions.
13. The module according to claim 12 , wherein the first regions have an average grain size D A <3 μm and the second regions have an average grain size D B >3 μm.
14. The module according to claim 12 , wherein the first regions have an average grain size D A <0.9 μm and the second regions have an average grain size D B >0.9 μm.