Semiconductor inspection device
A semiconductor inspection device capable of detecting an abnormality with high sensitivity in a failure analysis of a fine-structured device is provided. An electron optical system radiates an electron beam to a sample on a sample stage. A measurement device measures an output from a measurement probe that is in contact with the sample. An information processing device starts and stops the radiation of the electron beam to the sample, sets a first measurement period in which the measurement device measures the output from the measurement probe during the radiation and a second measurement period in which the measurement device measures the output from the measurement probe after the radiation, and obtains the measurement value of the output from the measurement probe based on a difference between a first measurement value measured in the first measurement period and a second measurement value measured in the second measurement period.
1. A semiconductor inspection device comprising:
a sample stage on which a sample is placed;
an electron optical system configured to radiate an electron beam to the sample;
a measurement probe configured to come into contact with the sample;
a measurement device configured to measure an output from the measurement probe; and
an information processing device configured to acquire a measurement value of the output from the measurement probe in response to radiation of the electron beam to the sample, wherein
the information processing device
sets a timing to start the radiation of the electron beam to the sample and a timing to freeze the radiation of the electron beam, a first measurement period in which the measurement device measures the output from the measurement probe in a state where the electron beam is radiated to the sample, and a second measurement period in which the measurement device measures the output from the measurement probe after the radiation of the electron beam is frozen, and
obtains the measurement value of the output from the measurement probe in response to the radiation of the electron beam to the sample from a difference between a first measurement value measured in the first measurement period and a second measurement value measured in the second measurement period.
2. The semiconductor inspection device according to claim 1 , wherein
the information processing device detects a time change of the output from the measurement probe when the electron beam is radiated to the sample, and sets the first measurement period and the second measurement period to be included in a time period in which the time change is small.
3. The semiconductor inspection device according to claim 2 , wherein
the first measurement value is a value obtained by integrating measurement values measured by the measurement device in the first measurement period, and the second measurement value is a value obtained by integrating measurement values measured by the measurement device in the second measurement period.
4. The semiconductor inspection device according to claim 3 , wherein
the measurement device measures a voltage signal generated in the measurement probe in response to the radiation of the electron beam.
5. The semiconductor inspection device according to claim 3 , further comprising:
a first measurement probe and a second measurement probe configured to come into contact with the sample; and
a differential amplifier in which an output from the first measurement probe is connected to a first input terminal, and an output from the second measurement probe is connected to a second input terminal, wherein
the measurement device measures a voltage signal output from the differential amplifier.
6. The semiconductor inspection device according to claim 5 , wherein
the information processing device controls a gain of the differential amplifier.
7. The semiconductor inspection device according to claim 3 , wherein
the measurement device measures a current signal generated in the measurement probe in response to the radiation of the electron beam.
8. The semiconductor inspection device according to claim 3 , wherein
the electron optical system scans the sample two-dimensionally, and
the information processing device stores the measurement value of the output from the measurement probe in response to the radiation of the electron beam in association with an irradiation position of the electron beam.
9. The semiconductor inspection device according to claim 8 , wherein
the information processing device creates a numerical mapping image in which a pixel value of a pixel corresponding to the irradiation position of the electron beam is determined based on the measurement value of the output from the measurement probe in response to the radiation of the electron beam.
10. The semiconductor inspection device according to claim 8 , further comprising:
a detector configured to detect signal electrons emitted by interaction between the electron beam and the sample, wherein
the information processing device creates an SEM image from a signal detected by the detector and sets virtual coordinates based on the SEM image.
11. The semiconductor inspection device according to claim 10 , wherein
the information processing device moves the measurement probe to a position designated by the virtual coordinates.
12. The semiconductor inspection device according to claim 1 , further comprising:
a detector configured to detect signal electrons emitted by interaction between the electron beam and the sample;
wherein
the electron optical system scans the sample two-dimensionally according to a first imaging condition, and the information processing device creates an SEM image from a signal detected by the detector and sets virtual coordinates based on the SEM image,
the electron optical system scans the sample two-dimensionally according to a second imaging condition, and the information processing device creates an electrical characteristic map image based on the measurement value of the output from the measurement probe measured by the measurement device, and
the information processing device specifies a position designated by the virtual coordinates on the electrical characteristic map image by performing coordinate conversion on the virtual coordinates based on the first imaging condition and the second imaging condition.
13. The semiconductor inspection device according to claim 12 , wherein
the information processing device determines a pixel value of the electrical characteristic map image based on the measurement value of the output from the measurement probe in response to the radiation of the electron beam to a position corresponding to a pixel of the electrical characteristic map image.
14. The semiconductor inspection device according to claim 12 , further comprising:
an electron beam absorbed current (EBAC) control device configured to output a signal indicating an absorbed current amount at an irradiation position of the electron beam based on the output from the measurement probe in response to the radiation of the electron beam, wherein
the electron optical system scans the sample two-dimensionally according to a third imaging condition, and by creating an EBAC image from the signal output from the EBAC control device and performing coordinate conversion on the virtual coordinates based on the first imaging condition and the third imaging condition, the information processing device converts a position on the EBAC image into a position on the virtual coordinates.
15. The semiconductor inspection device according to claim 12 , wherein
the measurement value of the output from the measurement probe measured by the measurement device is a voltage value or a current value.
16. The semiconductor inspection device according to claim 12 , wherein
the electron optical system radiates a pulse electron beam to the sample, and
the measurement value of the output from the measurement probe measured by the measurement device is a pulse response characteristic.
17. The semiconductor inspection device according to claim 16 , further comprising:
an electron beam absorbed current (EBAC) control device configured to output a signal indicating an absorbed current amount at an irradiation position of the pulse electron beam, in synchronization with the pulse electron beam, based on an output from the measurement probe in response to radiation of the pulse electron beam, wherein
the electron optical system scans the sample two-dimensionally according to a fourth imaging condition, and by creating a dynamic EBAC image from the signal output from the EBAC control device and performing coordinate conversion on the virtual coordinates based on the first imaging condition and the fourth imaging condition, the information processing device converts a position on the dynamic EBAC image into a position on the virtual coordinates.