Flash device and manufacturing method thereof

1. A method of manufacturing a flash device, comprising:

providing a substrate, a floating gate polycrystalline layer, a floating gate oxide layer, and a tunneling oxide layer being formed on the substrate; the floating gate polycrystalline layer being formed on the substrate, the floating gate oxide layer being formed between the substrate and the floating gate polycrystalline layer, and the tunneling oxide layer, that is continuous, being formed on the substrate and on the floating gate polycrystalline layer; wherein a substrate region located at one side of the floating gate polycrystalline layer is a first substrate region, and the first substrate region is configured to form a doped source region; a substrate region located at the other side of the floating gate polycrystalline layer is a second substrate region, and the second substrate region is configured to form a doped drain region;

forming a continuous non-conductive layer on the tunneling oxide layer in the first substrate region, the non-conductive layer extending onto the tunneling oxide layer located at a side wall of the floating gate polycrystalline layer; and

forming a polysilicon layer on the tunneling oxide layer to form a control gate as a wordline of the flash device;

wherein a lithography mask used in forming the continuous non-conductive layer is a lithography mask used in lithography of the doped source region.

2. The method of claim 1 , wherein

the non-conductive layer is formed on the tunneling oxide layer in the first substrate region, and extends onto a portion of the tunneling oxide layer located on the floating gate polycrystalline layer.

3. The method of claim 2 , wherein an end of the non-conductive layer on the floating gate polycrystalline layer is tangent to an end of the control gate on the floating gate polycrystalline layer.

4. The method of claim 2 , wherein

the non-conductive layer and the control gate have an overlapping region on the floating gate polycrystalline layer.

5. The method of claim 1 , wherein the forming the continuous non-conductive layer comprises depositing a non-conductive material on the tunneling oxide layer, and etching off superfluous non-conductive material by a wet etching process, to form the continuous non-conductive layer.

6. The method of claim 5 , wherein an etchant of the wet etching process is hot phosphoric acid.

7. The method of claim 5 , wherein after forming the continuous non-conductive layer, a removing process of photoresist corresponding to the non-conductive layer and the wet etching process are performed on a same working table.

8. The method of claim 1 , wherein the non-conductive layer is a silicon nitride layer, and the silicon nitride layer has a thickness of 300 Å.

9. A flash device, comprising:

a substrate;

a floating gate polycrystalline layer located on the substrate;

a floating gate oxide layer located between the substrate and the floating gate polycrystalline layer;

a tunneling oxide layer located on the substrate and on the floating gate polycrystalline layer; the substrate comprising a first substrate region having a doped source region and located at one side of the floating gate polycrystalline layer, and a second substrate region having a doped drain region and located at the other side of the floating gate polycrystalline layer;

a non-conductive layer located on the tunneling oxide layer in the first substrate region and extending onto the tunneling oxide layer located at a side wall of the floating gate polycrystalline layer; and

a control gate located on the tunneling oxide layer in the second substrate region and extending onto a portion of the tunneling oxide layer located on the floating gate polycrystalline layer;

wherein a lithography mask used in forming the non-conductive layer is a lithography mask used in lithography of the doped source region.

10. The flash device of claim 9 , wherein

the non-conductive layer is located on the tunneling oxide layer in the first substrate region, and extends onto a portion of the tunneling oxide layer located on the floating gate polycrystalline layer.

11. The flash device of claim 10 , wherein an end of the non-conductive layer on the floating gate polycrystalline layer is tangent to an end of the control gate on the floating gate polycrystalline layer.

12. The flash device of claim 10 , wherein

the non-conductive layer is located on the tunneling oxide layer in the first substrate region, and extends onto the portion of the tunneling oxide layer located on the floating gate polycrystalline layer, and the non-conductive layer and the control gate have an overlapping region on the floating gate polycrystalline layer.

13. The flash device of claim 9 , wherein

the flash device comprises MOS devices arranged side-by-side in pairs, and each of the MOS devices is the flash device of claim 10 ;

the first substrate region is a substrate region between the two MOS devices, and the second substrate region is a substrate region outside the two MOS devices.

14. The flash device of claim 9 , wherein the non-conductive layer is a silicon nitride layer, and the silicon nitride layer has a thickness of 300 Å.