IP Library Granted Patent US 12,054,811
Granted Patent B2
US 12,054,811 · App. 17/257,677 · Granted Aug 6, 2024

Aluminum alloy member for forming fluoride film and aluminum alloy member having fluoride film

Inventor: Isao Murase (Tochigi, JP)
Assignee: SHOWA DENKO K.K.
C22C21/06C22F1/05C23C28/04
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Quick Facts
Patent No.
US 12,054,811
App. No.
17/257,677
Granted
Aug 6, 2024
Kind
B2
Abstract

Provided is an aluminum alloy member for forming a fluoride film thereon, the fluoride film being excellent in smoothness without occurrence of a black dot-shaped bulged portion and excellent in corrosion resistance against corrosive gas and plasma, etc. The aluminum alloy member for forming a fluoride film thereon 1 for use in a semiconductor producing apparatus consists of Si: 0.3 mass % to 0.8 mass %; Mg: 0.5 mass % to 5.0 mass %; Fe: 0.05 mass % to 0.5 mass %; Cu: 0 mass % or more and 0.5 mass % or less; Mn: 0 mass % or more and 0.30 mass % or less; Cr: 0 mass % or more and 0.30 mass % or less 0.5 mass % or less; and the balance being Al and inevitable impurities. When an average major diameter of a Fe-based crystallized product in the aluminum alloy member is D (μm), and an average crystalline particle diameter in the aluminum alloy member is Y (μm), a relation expression of log 10 Y←0.320D+4.60 is satisfied. A fluoride film 2 is formed on at least a part of a surface of the aluminum alloy member 1 for forming a fluoride film thereon.

Claims (16)

1. An Aluminum alloy member for forming a fluoride film thereon, the aluminum alloy member consisting of:

Si: 0.3 mass % to 0.8 mass %;

Mg: 0.5 mass % to 5.0 mass %;

Fe: 0.05 mass % to 0.5 mass %;

Cu: 0 mass % or more and 0.5 mass % or less;

Mn: 0 mass % or more and 0.30 mass % or less;

Cr: 0 mass % or more and 0.30 mass % or less; and

the balance being Al and inevitable impurities,

wherein when an average major diameter of a Fe-based crystallized product in the aluminum alloy member is D (μm) and an average crystalline particle diameter in the aluminum alloy member is Y (μm), a following relational expression (1) is satisfied,

Log 10 Y←−0.320D+4.60 . . . Expression (1), and

wherein the aluminum alloy member is for use as a member for a semiconductor producing apparatus, and wherein the aluminum alloy member further comprises a fluoride film formed on at least a part of a surface of the aluminum alloy member,

wherein the fluoride film includes a first film layer formed on a surface of the aluminum alloy member for forming a fluoride film thereon and a second film layer formed on a surface of the first film layer,

wherein the first film layer is a film containing magnesium fluoride, and

wherein the second film layer is a film containing aluminum fluoride and aluminum oxide.

2. The Aluminum alloy member having a fluoride film as recited in claim 1 ,

wherein the fluoride film has a thickness of 0.1 μm to 10 μm.

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
CHANGE OF NAME Recorded Apr 18, 2023
From: SHOWA DENKO K.K.
To: RESONAC PACKAGING CORPORATION
Reel/Frame 064535/0265 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 17, 2021
From: MURASE, ISAO
To: SHOWA DENKO K.K.
Reel/Frame 055624/0064 →
Priority Claims (2)
JP 2018-127378 · Jul 4, 2018 · national
JP 2018-229556 · Dec 7, 2018 · national
Continuity (1)
Related Publication 20210317551A1 · Oct 14, 2021