Method of manufacture of single crystal synthetic diamond material
A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 10 7 cm −2 . The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.
1. A method of manufacturing synthetic single crystal diamond material using a chemical vapour deposition process, the method comprising:
locating a non-diamond substrate over a substrate holder within a chemical vapour deposition reactor, the substrate comprising a surface on which a synthetic single crystal diamond substrate wafer is to be grown heteroepitaxially;
feeding process gases into the reactor;
growing the synthetic single crystal diamond substrate wafer on the surface of the non-diamond substrate, the synthetic single crystal diamond substrate wafer having a dislocation density of at least 10 7 cm −2 ;
locating the synthetic single crystal diamond substrate wafer over a substrate holder within a further chemical vapour deposition reactor;
feeding process gases into the further reactor, the process gases including a gas comprising carbon;
growing synthetic diamond material on a surface of the single crystal diamond substrate wafer having the dislocation density of at least 10 7 cm −2 at a growth temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm such that the grown synthetic diamond material is crack free.
2. The method according to claim 1 , wherein the process gases comprise hydrogen and not more than 5% oxygen.
3. The method according to claim 1 , wherein the non-diamond substrate comprises any of iridium, silicon and silicon carbide.
4. The method according to claim 2 , further comprising removing a non-diamond substrate from the synthetic single crystal diamond substrate wafer prior to locating the synthetic single crystal diamond substrate wafer over the substrate holder.
5. The method according to claim 1 , wherein the grown synthetic diamond material is oriented at substantially {100} relative to the synthetic single crystal diamond substrate wafer.