Treatment liquid for semiconductor with ruthenium and method of producing the same
Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.
1. A treatment liquid for a semiconductor with ruthenium, being formed by mixing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water,
wherein the treatment liquid has the bromine-containing compound added in an amount of 0.008 mass % or more and less than 2.0 mass % as a bromine element content with respect to the total mass of the treatment liquid, has the oxidizing agent added in an amount of 0.1 mass ppm or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less, and
wherein the treatment liquid contains a hypobromite ion and a concentration of the hypobromite ion is 0.001 mol/L or more and 0.20 mol/L or less as the amount of the bromine element.
2. The treatment liquid for a semiconductor with ruthenium according to claim 1 , having the bromine-containing compound added in an amount of 0.08 mass % or more and less than 2.0 mass % as a bromine element content.
3. The treatment liquid for a semiconductor with ruthenium according to claim 1 , having the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content, and having the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less.
4. The treatment liquid for a semiconductor according to claim 1 , wherein the oxidizing agent is a hypochlorous acid compound or ozone.
5. The treatment liquid for a semiconductor according to claim 1 , wherein the bromine-containing compound is a bromine salt or hydrogen bromide.
6. The treatment liquid for a semiconductor according to claim 5 , wherein the bromine salt is a tetraalkylammonium bromide.
7. The treatment liquid for a semiconductor according to claim 1 , wherein the basic compound is a tetramethylammonium hydroxide.
8. The treatment liquid for a semiconductor according to claim 1 , wherein the pH is 12 or more and 14 or less.
9. A method of producing the treatment liquid for a semiconductor according to claim 1 , comprising a step of mixing the bromine-containing compound and a solution containing both the oxidizing agent and the basic compound.
10. A method of treating a substrate, comprising the steps of: producing a treatment liquid for a semiconductor by the production method according to claim 9 ; and then using the treatment liquid for a semiconductor to etch a ruthenium metal film and/or a ruthenium alloy film deposited on the substrate.
11. A method of producing the treatment liquid for a semiconductor according to claim 9 , comprising a step of mixing the bromine-containing compound into an aqueous solution of both the oxidizing agent and the basic compound.
12. The treatment liquid for a semiconductor according to claim 1 , wherein the proportion of the hypobromite ion in 1 mol of bromine element contained in the treatment liquid for a semiconductor is more than 0.5 mol.