Heterogenous integration for RF, microwave and MM wave systems in photoactive glass substrates

1. A method for creating a system in a package (SiP) with integrated lumped element devices formed as a heterogeneous integration system-on-chip (HiSoC) comprising the steps of:

forming a spacer by:

exposing at least one portion of a photosensitive glass substrate with an activating energy source;

heating the photosensitive glass substrate above a glass transition temperature thereof for at least ten minutes;

cooling the photosensitive glass substrate to transform at least a part of an exposed glass to a crystalline material to form a glass-crystalline substrate;

etching the glass-crystalline substrate with an etchant solution to form one or more channels or vias in the glass-crystalline substrate;

depositing a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill the one or more channels or vias; and

connecting a high electron mobility transistor (HEMT) to a copper plate or copper ground plate via the spacer.

2. The method of claim 1 , further comprising masking the copper plate or copper ground plate to produce a design layout comprising one or more rectangular structures with a global alignment mark and a local alignment mark within the design layout.

3. The method of claim 1 , further comprising at least one of: forming an isolator with the integrated lump element devices in the SiP; forming a circulator with the integrated lump element devices in the SiP; forming an RF filter with the integrated lump element devices in the SiP; forming at least one of a low pass, high pass filter, notch filter, band pass filter, transformer, circulator, coupler, isolator, with the integrated lump element devices in the SiP; forming a power combiner, a power splitter RF Circuit in or on the photosensitive glass substrate; or forming one or more RF Filters, RF Circulators, RF Isolators, Antenna, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, Duplexer, or Diplexers in or on the photosensitive glass substrate.

4. The method of claim 1 , further comprising forming a SiP RF Circuit that eliminates at least 30% or 35% of an RF parasitic signal associated with mounting the package with lumped element devices to a substrate.

5. The method of claim 1 , wherein the HiSoC comprises one or more layers.

6. A package lumped element device mounted to a system-in-package (SiP) in or on photo-definable glass made by a method comprising:

forming a spacer by:

exposing at least one portion of a photosensitive glass substrate with an activating energy source;

heating the photosensitive glass substrate above a glass transition temperature thereof for at least ten minutes;

cooling the photosensitive glass substrate to transform at least a part of an exposed glass of the photosensitive glass substrate to a crystalline material to form a glass-crystalline substrate;

etching the glass-crystalline substrate with an etchant solution to form one or more channels or vias in the glass-crystalline substrate;

depositing a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill the one or more channels or vias; and

connecting a high electron mobility transistor (HEMT) to a copper plate or copper ground plate via the spacer.

7. The device of claim 6 , wherein the package lumped element device is at least one of an isolator with the integrated lump element devices in the SiP; a circulator with the integrated lump element devices in the SiP; an RF filter with the integrated lump element devices in the SiP; at least one of a low pass, high pass filter, notch filter, band pass filter, transformer, circulator, coupler, isolator, with integrated lump element devices in the SiP; a power combiner, a power splitter RF Circuit in or on the photo-definable glass substrate; a SiP RF Circuit that eliminates at least 15% of an RF parasitic signal associated with the packaging a mount elements to the photosensitive glass substrate; a SiP RF Circuit that eliminates at least 25% of the RF parasitic signal associated with mounting the package lumped element device to a substrate; or one or more RF Filters, RF Circulators, RF Isolators, Antenna, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, Duplexers, or Diplexers.

8. A method for creating a system in a package with integrated lumped element devices formed as a system-in-package (SiP) in or on the photosensitive glass substrate comprising the steps of:

masking a design layout comprising one or more structures to form one or more electrical components on or in a photosensitive glass substrate spacer;

transforming at least a part of an exposed glass of the photosensitive glass substrate spacer to a crystalline material to form a glass-crystalline substrate;

etching the glass-crystalline substrate with an etchant solution to form one or more channels or vias in the glass-crystalline substrate;

depositing a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill the one or more channels or vias and deposit on the surface of the photosensitive glass substrate spacer; and

placing and electrically connecting a high electron mobility transistor (HEMT) on a copper plate or copper-coated glass wafer across the photosensitive glass substrate spacer.

9. The method of claim 8 , wherein the SiP is a heterogeneous integration system-on-chip HiSoC that reduces the parasitic noise and losses at least 30, 35, 40, 45, 50, or 60% when compared to an equivalent surface mounted device.

10. The method of claim 8 , further comprising forming at least one of: an isolator with the integrated lump element devices in the SiP; a circulator with the integrated lump element devices in the SiP; an RF filter with the integrated lump element devices in the SiP; at least one of a low pass, high pass filter, notch filter, band pass filter, transformer, circulator, coupler, isolator, with integrated lump element devices in a SiP; a power combiner, a power splitter RF Circuit in or on the photo-definable glass substrate.

11. The method of claim 8 , further comprising forming an SiP RF Circuit that eliminates at least 25, 30 or 30% of an RF parasitic signal associated with mounting the package with integrated lumped element devices to a substrate.

12. The method of claim 8 , further comprising forming one or more RF Filters, RF Circulators, RF Isolators, Antenna, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, Duplexers, and/or Diplexers.

13. A method for creating a system in a package with integrated lumped element devices formed as a heterogeneous integration system-on-chip (HiSoC) using a photo-definable glass comprising the steps of:

forming an integrated passive device (IPD) wafer by:

obtaining a copper plate or substrate;

coating the copper plate or substrate with a photoresist in an alignment pattern for one or more dies;

using the alignment pattern to pick, place and bond an active device to the copper plate or substrate;

depositing solder bonding balls on one or more contact pads of the active device;

forming a spacer wafer by:

lapping and polishing a spacer wafer of the photo-definable glass;

exposing, baking and etching one or more through hole openings or through hole vias to provide an electrical connection through the spacer wafer;

depositing a seed layer of Ti/Cu by chemical vapor deposition (CVD) on the spacer wafer;

electroplating or electroless plating copper into the one or more through hole openings or through hole vias in the spacer wafer;

removing excess copper to reduce a thickness of the copper on the spacer wafer;

coating, exposing and developing a photoresist in a pattern on a first side of the spacer wafer, wherein the pattern has a spacer edge area that is smaller than the pattern on the spacer wafer;

coating the first side of the spacer wafer with an electrically conductive material with a sputter deposition system;

removing the photoresist to leave the electrically conductive material in a continuous pattern;

uniformly coating a second side of the spacer wafer with an electrically conductive material using the sputter deposition system;

aligning the spacer wafer on the copper plate or substrate with the alignment pattern;

bonding the spacer wafer and to the copper plate or substrate;

depositing one or more solder balls on an opposite side of the spacer wafer at the one or more through hole openings or through hole vias; and

using the alignment pattern to electrically connect the integrated passive device (IPD) wafer to the spacer wafer with the one or more solder balls to connect the active device to a ground.