IP Library › Granted Patent US 11,320,695
Granted Patent B2
US 11,320,695 · App. 17/264,475 · Granted May 3, 2022

Backlight and liquid crystal display

Inventors: Minghai Zhao (Dalian, CN); Shunli Chen (Dalian, CN); Yongchang Sang (Dalian, CN)
G02F1/133603G02F1/133605G02F1/133606G02F1/133614
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Quick Facts
Patent No.
US 11,320,695
App. No.
17/264,475
Granted
May 3, 2022
Kind
B2
Abstract

A backlight and a liquid crystal display. The backlight includes: a circuit substrate, a plurality of LED chips and a first silica gel layer. The plurality of LED chips are fixed by means of die bond on the circuit substrate, and the first silica gel layer is applied to the circuit substrate and wraps the plurality of LED chips. The first silica gel layer makes light emitted by the LED chips more diffuse, thus enhancing light emission uniformity of the backlight and reducing a thickness of a backlight module.

Claims (32)

1. A backlight, comprising:

a circuit substrate;

a plurality of LED chips, the plurality of LED chips being fixed by means of die bond on the circuit substrate;

a first silica gel layer, the first silica gel layer being applied to the circuit substrate and wrapping the plurality of LED chips;

a phosphor layer applied to the first silica gel layer, the phosphor layer having a thickness less than 0.15 mm; and

a second silica gel layer disposed on the phosphor layer, the second silica gel layer being a silica gel layer mixed with diffusion powder;

wherein a surface of the first silica gel layer is flat, the surface of the first silica gel layer comprises a pattern of trenches, and a depth of each of the trenches is less than 0.05 mm.

2. The backlight according to claim 1 , wherein the first silica gel layer has a silica gel refractive index greater than 1.4, and the first silica gel layer has a thickness greater than 0.2 mm.

3. The backlight according to claim 1 , wherein a length of each LED chip is less than 0.5 mm; a width of each LED chip is less than 0.5 mm; and a height of the LED chip is less than 0.2 mm.

4. The backlight according to claim 1 , wherein the plurality of LED chips are fixed in an array by means of die bond on the circuit substrate.

5. The backlight according to claim 1 , wherein a distance between adjacent chips of the plurality of LED chips is less than 5 mm.

6. The backlight according to claim 1 , wherein a thickness of the circuit substrate is less than 0.5 mm.

7. A backlight, comprising:

a circuit substrate;

a plurality of LED chips disposed on the circuit substrate;

a reflective film disposed on the circuit substrate and comprising a plurality of openings corresponding to the plurality of LED chips; and

a diffusing layer disposed on the plurality of LED chips, the diffusing layer comprising a silica gel layer and a plurality of three-dimensional microstructures disposed on a surface of the silica gel layer, and the surface of the silica gel layer being away from the LED chip, wherein the silica gel layer is a transparent organosilica gel layer or an organosilica gel layer mixed with phosphor or quantum dots, and a thickness of the silica gel layer is between 0.1 mm and 1 mm.

8. The backlight according to claim 7 , wherein a reflectivity of the reflective film is greater than 90%, and a material of the reflective film comprises a polymer or a metal.

9. The backlight according to claim 7 , wherein the plurality of LED chips are distributed in a rectangular array, a circular array, or a special-shaped array on the circuit substrate.

10. The backlight according to claim 9 , wherein a distance between any two adjacent LED chips of the plurality of LED chips is between 0.1 mm and 10 mm.

11. The backlight according to claim 7 , wherein the LED chip has a length of between 0.05 mm and 0.5 mm, a width of between 0.05 mm and 0.5 mm, and a thickness of between 0.05 mm and 0.3 mm.

12. A liquid crystal display, comprising a display panel and the backlight according to claim 1 .

13. A method for manufacturing the backlight according to claim 7 , comprising:

providing the plurality of LED chips on the circuit substrate;

providing the plurality of openings in the reflective film corresponding to the plurality of LED chips;

providing the reflective film on the circuit substrate; and

providing the silica gel layer and the plurality of three-dimensional microstructures on the LED chips.

14. The method for manufacturing the backlight according to claim 13 , the providing the silica gel layer and the plurality of three-dimensional microstructures on the LED chips comprises:

providing a mask layer on the LED chips, the mask layer having a plurality of through-holes and microstructures;

forming the silica gel layer on the LED chips through the plurality of through-holes, and forming the plurality of three-dimensional microstructures on a surface of the silica gel layer and at positions corresponding to the microstructures of the mask layer;

curing the silica gel layer, on which the plurality of three-dimensional microstructures are formed; and

removing the mask layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 29, 2021
From: ZHAO, MINGHAI; CHEN, SHUNLI; SANG, YONGCHANG
To: ELEC-TECH PHOTOELECTRIC TECHNOLOGY (DALIAN) CO., LTD.
Reel/Frame 055083/0815 →
Priority Claims (2)
CN 201821282000.5 · Aug 9, 2018 · national
CN 201821634406.5 · Oct 9, 2018 · national
Continuity (1)
Related Publication 20210318576A1 · Oct 14, 2021
Cited By (1)
US 12,249,596