TVS device and manufacturing method therefor

1. A Transient Voltage Suppressor (TVS) device, comprising:

a first-doping-type semiconductor substrate;

a first second-doping-type deep well and a second second-doping-type deep well disposed on the first-doping-type semiconductor substrate, and a first-doping-type deep well located between the first second-doping-type deep well and the second second-doping-type deep well;

a first second-doping-type heavily doped region disposed in the first second-doping-type deep well;

a first-doping-type well region and a first first-doping-type heavily doped region disposed in the second second-doping-type deep well;

a second first-doping-type heavily doped region and a second second-doping-type heavily doped region disposed in the first-doping-type well region;

a third second-doping-type heavily doped region partially located in the first-doping-type well region and partially located in the second second-doping-type deep well; and

a first-doping-type doped region disposed in the first-doping-type well region and in contact with the third second-doping-type heavily doped region;

wherein, the first-doping-type and the second-doping-type are opposite.

2. The TVS device according to claim 1 , wherein the first second-doping-type heavily doped region and the first first-doping-type heavily doped region are connected to an input/output terminal, and the second first-doping-type heavily doped region and the second second-doping-type heavily doped region are connected to a ground terminal.

3. The TVS device according to claim 1 , wherein the first first-doping-type heavily doped region, the second second-doping-type deep well, the third second-doping-type heavily doped region, the first-doping-type well region, and the second first-doping-type heavily doped region constitute a first triode;

the third second-doping-type heavily doped region and the first-doping-type doped region constitute a Zener diode;

the third second-doping-type heavily doped region, the first-doping-type well region, and the second second-doping-type heavily doped region constitute a second triode;

the first second-doping-type heavily doped region, the first second-doping-type deep well, the first-doping-type deep well, and the second second-doping-type deep well constitute a third triode;

the second first-doping-type heavily doped region, the first-doping-type well region, the second second-doping-type deep well, and the first-doping-type deep well constitute a fourth triode; and

the first-doping-type well region and the second first-doping-type heavily doped region constitute a resistor.

4. The TVS device according to claim 3 , wherein when a positive instantaneous pulse signal enters from an input/output terminal, the fourth triode and the third triode constitute a first thyristor, and a trigger voltage of the first thyristor is higher than a breakdown voltage of the Zener diode.

5. The TVS device according to claim 3 , wherein when a negative instantaneous pulse signal enters from the input/output terminal, the third triode and the fourth triode constitute a second thyristor, and a trigger voltage of the second thyristor is less than a reverse biased breakdown voltage of the first triode.

6. The TVS device according to claim 4 , wherein the breakdown voltage of the Zener diode is 6 V to 8 V.

7. The TVS device according to claim 1 , wherein the first-doping-type doped region is located below the third second-doping-type heavily doped region.

8. The TVS device according to claim 1 , wherein doping ions of the first second-doping-type heavily doped region comprises arsenic ions and phosphorus ions, and a doping concentration of the arsenic ions is 5E15 cm −3 to 1E16 cm −3 , and a doping concentration of the phosphorus ions is 1E14 cm −3 to 1E15 cm −3 .

9. The TVS device according to claim 1 , wherein doping ions of the first-doping-type doped region comprises phosphorus ions and boron ions, and a doping concentration of the phosphorus ions is 1E13 cm −3 to 1E14 cm −3 , and a doping concentration of the boron ions is 1E14 cm −3 to 1E15 cm −3 .

10. The TVS device according to claim 1 , wherein a doping concentration of the first-doping-type well region is 1E13 cm −3 to 1E14 cm −3 , and a doping concentration of doping ions of the first first-doping-type heavily doped region is 1E15 cm −3 to 1E16 cm −3 .

11. The TVS device according to claim 1 , wherein the first-doping-type is P type and the second-doping-type is N type.

12. A manufacturing method for a TVS device, comprising:

providing a first-doping-type semiconductor substrate;

performing ion implantation to form a first second-doping-type ion implantation region, a second second-doping-type ion implantation region, and a first first-doping-type ion implantation region located between the first second-doping-type ion implantation region and the second second-doping-type ion implantation region on the first-doping-type semiconductor substrate;

performing a high-temperature drive-in process to form a first second-doping-type deep well, a second second-doping-type deep well, and a first-doping-type deep well located between the first second-doping-type deep well and the second second-doping-type deep well;

forming a first-doping-type well region in the second second-doping-type deep well;

performing ion implantation to form a first second-doping-type heavily doped region located in the first second-doping-type deep well, a second second-doping-type heavily doped region located in the first-doping-type well region, a third second-doping-type heavily doped region partially located in the first-doping-type well region and partially located in the second second-doping-type deep well, and a first first-doping-type heavily doped region located in the second second-doping-type deep well and a second first-doping-type heavily doped region located in the first-doping-type well region; and

performing first-doping-type ion implantation to form a first-doping-type doped region in the first-doping-type well region, the first-doping-type doped region being in contact with the third second-doping-type heavily doped region.

13. The manufacturing method according to claim 12 , wherein a method of forming the first-doping-type well region comprises:

performing ion implantation to form a second first-doping-type ion implanted region in the second second-doping-type deep well; and

performing a high-temperature drive-in process to form the first-doping-type well region.

14. The manufacturing method according to claim 12 , wherein after the step of forming the first-doping-type doped region, the manufacturing method further comprises:

performing an annealing process to activate doping ions.

15. The manufacturing method according to claim 12 , wherein the step of forming the first second-doping-type ion implanted region, the second second-doping-type ion implanted region, and the first first-doping-type ion implanted region comprises:

forming a first mask layer covering the semiconductor substrate;

etching the first mask layer to form a second-doping-type implantation window;

performing second-doping-type ion implantation to form the first second-doping-type ion implanted region and the second second-doping-type ion implanted region;

forming a second mask layer covering the first second-doping-type ion implanted region and the second second-doping-type ion implanted region, and removing the first mask layer; and

performing first-doping-type ion implantation using the second mask layer as a mask to form the first first-doping-type ion implanted region.