Silanol-containing organic-inorganic hybrid coatings for high resolution patterning
Silanol-containing organic-inorganic hybrid coatings on semiconductor substrates for forming patterns thereon. The present coatings can be produced by coating of semiconductor substrates with metal and silanol containing polyhydridosilsesquioxane resin solutions. Provided herein is also a method for patterning a metal and silanol containing polyhydridosilsesquioxane coated substrate with radiation of light at a specific wavelength, the method comprising the steps of irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating and selectively developing the irradiated structure to remove a substantial portion of the un-irradiated coating to form a patterned substrate. The invention allows for obtaining a preselected silanol content polyhydridosilsesquioxane resin, and adjustment of the silanol content will make it possible to obtain a highly sensitive coating for application in EUV.
1 . A method for producing a semiconductor device, comprising:
applying one or more resist underlayer films onto a semiconductor substrate;
applying a coating composition as a resist onto the one or more resist underlayer films and baking the composition to form a resist film;
exposing the resist film to light;
after the light exposure, developing the resist film to form a resist pattern;
etching the one or more resist underlayer films using the resist pattern; and
fabricating the semiconductor substrate using the resist film thus patterned and the one or more resist underlayer films thus patterned,
wherein the coating composition comprises, in liquid phase, a solvent and a resin having the general formula (I):
wherein
A, B, C, and D each represent an integer independently selected from 1 to 1000;
Z stands for a functional group and M stands for a metal atom:
R 1 to R 8 stand for hydrocarbyl radicals; and
a, b, m, o, y, z, p, q and x each independently stand for an integer of 0 to 3,
wherein the resin has a silicon content of 35% by weight or more,
wherein the metal is selected from the group consisting of antimony, bismuth, germanium, hafnium, iron, molybdenum, cerium, lanthanum, yttrium, tin, titanium, zirconium, aluminium, and combinations thereof, and
wherein the coating composition is a resist coating.
2 . A method of producing a semiconductor device, comprising:
forming an organic underlayer film on a semiconductor substrate;
applying a coating composition for forming a resist film onto the organic underlayer film and baking the coating composition to form a resist film;
exposing the resist film to light;
after the light exposure, developing the resist film to form a resist pattern;
etching a resist underlayer film using the resist pattern;
etching the organic underlayer film using the resist underlayer film thus patterned; and
fabricating the semiconductor substrate using the organic underlayer film thus patterned,
wherein the coating composition comprises, in liquid phase, a solvent and a resin having the general formula (I):
wherein
A, B, C, and D each represent an integer independently selected from 1 to 1000;
Z stands for a functional group and M stands for a metal atom;
R 1 to R 8 stand for hydrocarbyl radicals; and
a, b, m, o, y, z, p, q and x each independently stand for an integer of 0 to 3,
wherein the resin has a silicon content of 35% by weight or more,
wherein the metal is selected from the group consisting of antimony, bismuth, germanium, hafnium, iron, molybdenum, cerium, lanthanum, yttrium, tin, titanium, zirconium, aluminium, and combinations thereof, and
wherein the coating composition is a resist coating.