IP Library › Granted Patent US 11,908,850
Granted Patent B2
US 11,908,850 · App. 17/270,081 · Granted Feb 20, 2024

Display device, display module, electronic device, and method for manufacturing display device

Inventors: Shunpei Yamazaki (Tokyo, JP); Koji Kusunoki (Kanagawa, JP); Shingo Eguchi (Kanagawa, JP); Takayuki Ikeda (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L25/18G06F3/044H01L24/94H01L25/0657H01L25/167H01L25/50H01L33/0093G06F2203/04103H01L24/16H01L27/1225H01L27/156H01L2224/16145H01L2225/06513H01L2924/12041
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Quick Facts
Patent No.
US 11,908,850
App. No.
17/270,081
Granted
Feb 20, 2024
Kind
B2
Abstract

A display device with high resolution is provided. A display device with high display quality is provided. The display device includes a substrate, an insulating layer, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light-emitting diodes are provided in a matrix over the substrate. Each of the plurality of transistors is electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes are positioned closer to the substrate than the plurality of transistors are. The plurality of light-emitting diodes emit light toward the substrate. Each of the plurality of transistors includes a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. The top surface of the gate electrode is substantially level with the top surface of the insulating layer.

Claims (79)

1. A display device comprising:

a substrate;

a plurality of light-emitting diodes over the substrate, the plurality of light-emitting diodes arranged in a matrix;

a plurality of transistors each electrically connected to at least one of the plurality of light-emitting diodes;

an insulating layer between the plurality of light-emitting diodes and the plurality of transistors; and

a plurality of conductive pastes between the plurality of light-emitting diodes and the plurality of transistors,

wherein one of the plurality of transistors is electrically connected to the one of the plurality of light-emitting diodes via one of the plurality of conductive pastes,

wherein the plurality of light-emitting diodes is closer to the substrate than the plurality of transistors is,

wherein each of the plurality of light-emitting diodes is a micro light-emitting diode,

wherein an area of a light-emitting region of each of the plurality of light-emitting diodes is less than or equal to 10000 μm 2 ,

wherein each of the plurality of transistors comprises a metal oxide layer and a gate electrode, and

wherein a top surface of the gate electrode is substantially level with a top surface of the insulating layer.

2. The display device according to claim 1 ,

wherein the plurality of light-emitting diodes comprises a first light-emitting diode and a second light-emitting diode, and

wherein emission of the first light-emitting diode has a different color from emission of the second light-emitting diode.

3. The display device according to claim 2 ,

wherein a first transistor is electrically connected to the first light-emitting diode,

wherein a second transistor is electrically connected to the second light-emitting diode, and

wherein the first transistor and the second transistor are different in one or both of channel length and channel width.

4. The display device according to claim 1 , wherein all the plurality of light-emitting diodes is configured to emit light with an identical color.

5. The display device according to claim 1 , further comprising a driver circuit,

wherein the driver circuit comprises a plurality of circuit transistors,

wherein each of the plurality of circuit transistors comprises a channel formation region in a semiconductor substrate,

wherein the insulating layer, the plurality of transistors, and the plurality of light-emitting diodes are between the substrate and the semiconductor substrate, and

wherein the plurality of transistors is closer to the substrate than the plurality of circuit transistors is.

6. The display device according to claim 1 , further comprising a functional layer,

wherein the functional layer is between the substrate and the one of the plurality of light-emitting diodes,

wherein the one of the plurality of light-emitting diodes emits light toward the substrate through the functional layer, and

wherein the functional layer comprises one or both of a coloring layer and a color conversion layer.

7. The display device according to claim 1 , further comprising a touch sensor,

wherein each of the plurality of light-emitting diodes is configured to emit light toward the touch sensor through the substrate.

8. A display module comprising:

the display device according to claim 1 ; and

one of a connector and an integrated circuit electrically connected to the display device.

9. The display device according to claim 1 , further comprising a color conversion layer overlapping with the one of the plurality of light-emitting diodes,

wherein the color conversion layer includes a quantum dot.

10. A display device comprising:

a substrate;

an insulating layer;

a plurality of light-emitting diodes over the substrate, the plurality of light-emitting diodes arranged in a matrix;

a plurality of transistors each electrically connected to at least one of the plurality of light-emitting diodes; and

a plurality of conductive pastes between the plurality of light-emitting diodes and the plurality of transistors,

wherein one of the plurality of transistors is electrically connected to the one of the plurality of light-emitting diodes via one of the plurality of conductive pastes,

wherein the plurality of light-emitting diodes is closer to the substrate than the plurality of transistors is,

wherein each of the plurality of light-emitting diodes is a micro light-emitting diode,

wherein an area of a light-emitting region of each of the plurality of light-emitting diodes is less than or equal to 10000 μm 2 ,

wherein the plurality of light-emitting diodes is configured to emit light toward the substrate,

wherein each of the plurality of transistors comprises a metal oxide layer, a gate insulating layer, a gate electrode, a first conductive layer, and a second conductive layer,

wherein the metal oxide layer comprises a first region, a second region, and a third region comprising a channel formation region between the first region and the second region,

wherein the first conductive layer overlaps with the first region and the second conductive layer overlaps with the second region,

wherein the first conductive layer and the second conductive layer are apart from each other over the metal oxide layer,

wherein the insulating layer is over the first conductive layer and the second conductive layer,

wherein the insulating layer comprises an opening overlapping with the third region,

wherein the gate insulating layer and the gate electrode are inside the opening, and

wherein the gate electrode faces the insulating layer with the gate insulating layer therebetween and faces the third region with the gate insulating layer therebetween.

11. The display device according to claim 10 ,

wherein the plurality of light-emitting diodes comprises a first light-emitting diode and a second light-emitting diode, and

wherein emission of the first light-emitting diode has a different color from emission of the second light-emitting diode.

12. The display device according to claim 11 ,

wherein a first transistor is electrically connected to the first light-emitting diode,

wherein a second transistor is electrically connected to the second light-emitting diode, and

wherein the first transistor and the second transistor are different in one or both of channel length and channel width.

13. The display device according to claim 10 , wherein all the plurality of light-emitting diodes is configured to emit light with an identical color.

14. The display device according to claim 10 , further comprising a driver circuit,

wherein the driver circuit comprises a plurality of circuit transistors,

wherein each of the plurality of circuit transistors comprises a channel formation region in a semiconductor substrate,

wherein the insulating layer, the plurality of transistors, and the plurality of light-emitting diodes are between the substrate and the semiconductor substrate, and

wherein the plurality of transistors is closer to the substrate than the plurality of circuit transistors is.

15. The display device according to claim 10 , further comprising a functional layer,

wherein the functional layer is between the substrate and the one of the plurality of light-emitting diodes,

wherein the one of the plurality of light-emitting diodes emits light toward the substrate through the functional layer, and

wherein the functional layer comprises one or both of a coloring layer and a color conversion layer.

16. The display device according to claim 10 , further comprising a touch sensor,

wherein each of the plurality of light-emitting diodes is configured to emit light toward the touch sensor through the substrate.

17. A display module comprising:

the display device according to claim 10 ; and

one of a connector and an integrated circuit electrically connected to the display device.

18. The display device according to claim 10 , further comprising a color conversion layer overlapping with the one of the plurality of light-emitting diodes,

wherein the color conversion layer includes a quantum dot.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 22, 2021
From: YAMAZAKI, SHUNPEI; KUSUNOKI, KOJI; EGUCHI, SHINGO; IKEDA, TAKAYUKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 055349/0801 →
Priority Claims (2)
JP 2018-166335 · Sep 5, 2018 · national
JP 2018-166336 · Sep 5, 2018 · national
Continuity (1)
Related Publication 20210327865A1 · Oct 21, 2021
Cited By (1)
US 12,557,440