Low-κ ALD gap-fill methods and material
Various embodiments include methods to produce low dielectric-constant (low-k) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-k materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace “F” with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.
1. A method of forming low dielectric-constant (low-κ) films, the method comprising:
depositing, by atomic-layer deposition (ALD) techniques, a film-deposition layer;
doping the deposited film-deposition layer with fluorine;
depositing, by atomic-layer deposition techniques, a subsequent film-deposition layer;
repeating the deposition operations and the doping operations as needed to obtain a final film thickness of a film having a low dielectric constant; and
selecting at least one variable from variables comprising a level of fluorine doping and a deposited film thickness per deposition layer, such that the resulting formed film has a low dielectric constant in a range of about 3.2 to about 3.4.
2. The method of claim 1 , where the formed low-κ films are silicon-based materials.
3. The method of claim 2 , further comprising selecting a silane precursor.
4. The method of claim 1 , wherein the low-κ films comprise at least one material selected from materials including fluorine-doped silicon oxide (SiOF), carbonofluoridoylsilicon (SiOCF), and fluorinated silicon oxynitride (SiONF).
5. The method of claim 1 , further comprising selecting a density of the fluorine dopant is within a range of about 1×10 18 atoms per cm 3 to about 1×10 21 atoms per cm 3 .
6. The method of claim 5 , wherein the stated range of the density of the fluorine dopant is within a silicon oxide matrix.
7. A method of forming a low dielectric-constant (low-κ) film, the method comprising:
introducing a silane precursor into a reaction chamber;
depositing, by an atomic-layer deposition (ALD) process, at least a first layer of film;
oxidizing and cleaning the first layer of film;
doping the first layer of film with a fluorine-based dopant material; and
selecting at least one variable from variables comprising a level of fluorine doping and a deposited film thickness per deposition layer, such that the resulting formed film has a low dielectric constant in a range of about 3.2 to about 3.4.
8. The method of claim 7 , further comprising repeating the deposition operations and the doping operations as needed to obtain a final desired film thickness of a film having a low dielectric constant in a range of about 3.2 to about 3.4.
9. The method of claim 7 , further comprising adding an anneal operation.
10. The method of claim 7 , further comprising forming the film at least partially within a high-aspect feature thereby providing a substantially void-free gap-fill of the high-aspect ratio feature.
11. The method of claim 7 , further comprising selecting a profile of the fluorine-dopant profile to have a gradient profile in at least one spatial direction.
12. The method of claim 7 , further comprising selecting a profile of the fluorine-dopant profile to have a non-gradient profile in at least one spatial direction.
13. A method of forming a low dielectric-constant (low-κ) silicon oxide film, the method comprising:
depositing, by atomic-layer deposition (ALD) techniques, a film-deposition layer;
doping the deposited film-deposition film layer with a halide;
depositing, by atomic-layer deposition (ALD) techniques, a subsequent film-deposition layer of silicon oxide;
selecting at least one variable from variables comprising a level of fluorine doping and a deposited film thickness per deposition layer; and
repeating the deposition operations and the doping operations as needed to obtain a final film thickness of the silicon oxide film having a low dielectric constant in a range of about 3.2 to about 3.4.
14. The method of claim 13 , further comprising selecting the halide to comprise at least one material selected from materials including iodine and bromine.
15. A method of forming a low dielectric-constant (low-κ) film, the method comprising:
modulating a film thickness by atomic-layer deposition (ALD) techniques, in a layer-by-layer film-deposition process;
doping each deposited film layer with dopant material selected from at least one dopant material comprising fluorine and a halide;
depositing, by atomic-layer deposition (ALD) techniques, a subsequent film-deposition layer;
repeating the deposition operations and the doping operations as needed to obtain a final film thickness of the low-κ film; and
selecting at least one variable from variables comprising a level of fluorine doping and a deposited film thickness per deposition layer, such that the resulting formed film has a low dielectric constant in a range of about 3.2 to about 3.4.
16. The method of claim 15 , further comprising selecting a type of dielectric material to be deposited.
17. The method of claim 15 , wherein the low-κ film comprises at least one material selected from materials including fluorine-doped silicon oxide (SiOF), carbonofluoridoylsilicon (SiOCF), and fluorinated silicon oxynitride (SiONF).
18. The method of claim 15 , wherein the low-κ film comprises at least one material selected from materials including carbonofluoridoylgermanium (GeOCF) and fluorine-doped germanium oxide (GeOF) materials.