Laser processing method, method for manufacturing semiconductor device, and inspecting device
An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output light, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect whether or not there is a tip of a fracture in an inspection region between a front surface and the modified region closest to the front surface of the semiconductor substrate. The objective lens positions a virtual focus symmetrical with a focus with respect to the front surface in the inspection region. The light detection part detects light propagating from the back surface side of the semiconductor substrate to the back surface side via the front surface.
1. A laser processing method comprising:
a first step of preparing a wafer including a semiconductor substrate having a front surface and a back surface and a functional element layer formed on the front surface, and forming a plurality of rows of modified regions in the semiconductor substrate along each of a plurality of lines by irradiating the wafer with laser light from the back surface side along each of the plurality of lines; and
a second step of inspecting whether or not there is a tip of a fracture in an inspection region between the front surface and the modified region closest to the front surface among the plurality of rows of modified regions, the fracture extending to the front surface side from the modified region closest to the front surface, wherein
in the first step, the wafer is irradiated with the laser light from the back surface side along each of the plurality of lines under a condition that a fracture extending through the plurality of rows of modified regions is formed, and
in the second step, whether or not there is the tip in the inspection region is inspected by aligning a focus from the back surface side to a region on an opposite side of the back surface with respect to the front surface, positioning a virtual focus symmetrical with the focus with respect to the front surface in the inspection region, and detecting light propagating in the semiconductor substrate from the back surface side to the back surface side via the front surface.
2. The laser processing method according to claim 1 , wherein
in the first step, the wafer is irradiated with the laser light from the back surface side along each of the plurality of lines under a condition that the fracture extending through the plurality of rows of modified regions reaches the front surface.
3. The laser processing method according to claim 2 , further comprising:
a third step of evaluating a processing result in the first step, based on an inspection result in the second step, wherein
in the third step,
it is evaluated that the fracture extending through the plurality of rows of modified regions reaches the front surface, in a case where there is no tip in the inspection region, and
it is evaluated that the fracture extending through the plurality of rows of modified regions does not reach the front surface, in a case where there is the tip in the inspection region.
4. The laser processing method according to claim 1 , wherein
the plurality of rows of modified regions are two rows of modified regions.
5. A method for manufacturing a semiconductor device, the method comprising:
the first step, the second step, and the third step of the laser processing method according to claim 3 ; and
a fourth step of, in a case where it is evaluated that the fracture extending through the plurality of rows of modified regions reaches the front surface in the third step, exposing the fracture extending through the plurality of rows of modified regions to the back surface by grinding the back surface, and cutting the wafer into a plurality of semiconductor devices along each of the plurality of lines.
6. An inspecting device comprising:
a stage configured to support a wafer including a semiconductor substrate having a front surface and a back surface and a functional element layer formed on the front surface, the wafer in which a plurality of rows of modified regions are formed in the semiconductor substrate along each of a plurality of lines;
a light source configured to output light having transparency to the semiconductor substrate;
an objective lens configured to pass the light output from the light source and propagated through the semiconductor substrate;
a light detection part configured to detect the light passing through the objective lens; and
an inspection part configured to inspect whether or not there is a tip of a fracture in an inspection region between the front surface and the modified region closest to the front surface among the plurality of rows of modified regions, based on a signal output from the light detection part, the fracture extending from the modified region closest to the front surface to the front surface side, wherein
the objective lens aligns a focus from the back surface side to a region on an opposite side of the back surface with respect to the front surface and positions a virtual focus symmetrical with the focus with respect to the front surface in the inspection region, and
the light detection part detects the light propagating in the semiconductor substrate from the back surface side to the back surface side via the front surface.
7. The inspecting device according to claim 6 , wherein
the objective lens has a numerical aperture of 0.45 or more.
8. The inspecting device according to claim 6 , wherein
the objective lens includes a correction ring.